Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Abstract: An adjustable attenuation wrap plug for insertion into a signal port at an end product includes a housing with a protruding input prong and output prong, wherein a signal cable is coupled to the input prong and the output prong. The adjustable attenuation wrap plug further includes a ratchet mechanism at least partially disposed in the housing, wherein the ratchet mechanism is configurable to alter a shape of the signal cable.

Abstract: A device, a method, and an article of manufacture are disclosed. The device includes a first optical fiber, a second optical fiber, an electrochromic component positioned between tips of the optical fibers, and a voltage source connected to the electrochromic component. The method includes providing an electrochromic component, providing optical fibers and a voltage source, and assembling an optical switch that includes the electrochromic component, the optical fibers, and the voltage source. The voltage source is connected to the electrochromic component. The article of manufacture includes an optical switch with a voltage source connected to an electrochromic component positioned between optical fiber tips.

Abstract: An apparatus for an attenuation adjustment tool, the attenuation adjustment tool includes a body with an adjustment arm positioned at a first side of the body, where an actuator is configured to extend and retract the adjustment arm. The attenuation adjustment tool further includes an input port and an output port positioned at the first side of the body, wherein an input prong and an output prong of a wrap plug are each respectively insertable into the input port and the output port. The attenuation adjustment tool further includes the adjustment arm configurable to engage with a mechanism on the wrap plug, wherein the mechanism is configurable to alter a shape of a signal cable in the wrap plug.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Abstract: Aspects include obtaining, by a sending system, a measured receive optical power level of an optical signal that was received at a receiving system coupled to the sending system via an optical network. The optical signal was sent via an optical transmitter of the sending system to an optical receiver of the receiving system. An optimal receive optical power level of the optical receiver of the receiving system is determined by the sending system. The sending system adjusts an output optical power level of the optical transmitter in response to determining that the measured receive optical power level is not within a threshold of the optimal receive optical power level. The adjusting is performed without decoupling the sending system from the receiving system.

Abstract: A fiber-optic switching system is provided which includes an optical fiber switch having first and second optical fiber portions and an electrically-controlled actuator. The first and second optical fiber portions are spaced apart with a gap between the portions that is sized to allow for light signal coupling between the optical fiber portions in a signal-passing state of the switch. The electrically-controlled actuator is coupled to transition the switch between the signal-passing state, where the light signal is allowed to pass between the optical fiber portions, and a signal-non-passing state, where the light signal is prevented from passing between the optical fiber portions. The electrically-controlled actuator includes an electroactive material exhibiting a physical change with change in an applied electrical field, where the physical change facilitates transitioning the optical fiber switch between the signal-passing and the signal-non-passing states.

Abstract: An apparatus for an attenuation adjustment tool, the attenuation adjustment tool includes a body with an adjustment arm positioned at a first side of the body, where an actuator is configured to extend and retract the adjustment arm. The attenuation adjustment tool further includes an input port and an output port positioned at the first side of the body, wherein an input prong and an output prong of a wrap plug are each respectively insertable into the input port and the output port. The attenuation adjustment tool further includes the adjustment arm configurable to engage with a mechanism on the wrap plug, wherein the mechanism is configurable to alter a shape of a signal cable in the wrap plug.

Abstract: An adjustable attenuation wrap plug for insertion into a signal port at an end product includes a housing with a protruding input prong and output prong, wherein a signal cable is coupled to the input prong and the output prong. The adjustable attenuation wrap plug further includes a ratchet mechanism at least partially disposed in the housing, wherein the ratchet mechanism is configurable to alter a shape of the signal cable.

Abstract: A fiber-optic switching system is provided which includes an optical fiber switch having first and second optical fiber portions and an electrically-controlled actuator. The first and second optical fiber portions are spaced apart with a gap between the portions that is sized to allow for light signal coupling between the optical fiber portions in a signal-passing state of the switch. The electrically-controlled actuator is coupled to transition the switch between the signal-passing state, where the light signal is allowed to pass between the optical fiber portions, and a signal-non-passing state, where the light signal is prevented from passing between the optical fiber portions. The electrically-controlled actuator includes an electroactive material exhibiting a physical change with change in an applied electrical field, where the physical change facilitates transitioning the optical fiber switch between the signal-passing and the signal-non-passing states.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Abstract: A method of using an adjustable attenuation fiber optic wrap plug (“AAFOWP”) includes receiving initial data into a wireless module of the AAFOWP, wherein the initial data corresponds to an initial desired attenuation level that the first AAFOWP is to achieve. The method also includes moving, in response to receiving the initial data, an arm by an actuator to change a bend radius of an optical fiber wrap in the AAFOWP, thus adjusting an attenuation through the AAFOWP to the initial desired attenuation level.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.