Patents by Inventor Fahhad ALHARBI

Fahhad ALHARBI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11866344
    Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: January 9, 2024
    Assignees: Trinity College Dublin, Qatar Foundation for Education, Science and Community Development
    Inventors: Fadwa El-Mellouhi, Heesoo Park, Nouar Tabet, Fahhad Alharbi, Stefano Sanvito
  • Publication number: 20210269326
    Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.
    Type: Application
    Filed: February 5, 2019
    Publication date: September 2, 2021
    Inventors: Fadwa EL-MELLOUHI, Heesoo PARK, Nouar TABET, Fahhad ALHARBI, Stefano SANVITO