Patents by Inventor Fai Ching

Fai Ching has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7143257
    Abstract: An apparatus and method identify a plurality of words to be read, read these selected words during a clock latency period, and then shift these words out synchronously at an end of the latency period. In another aspect of the present invention, the above method of reading a plurality of words during a clock latency period and shifting them out synchronously after the latency period is facilitated by a two tier column decoder. The two-tier column decoder has two decoders. A first-tier decoder decodes a first group of words to be read during the latency period, and a second-tier decoder decodes subsequent words to be shifted out synchronously during a burst period.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: November 28, 2006
    Assignee: Atmel Corporation
    Inventors: Vikram Kowshik, Fai Ching, Steven J. Schumann
  • Patent number: 6940759
    Abstract: A decoding system for multi-plane memories routes address information corresponding to distinct memory access operations to the designated planes. The system includes an array of functional registers dedicated to random access read, burst read, program, erase, and erase-suspend program operations. Plane selector blocks for each plane receive the address outputs from all of the registers and plane function select logic controls the routing in accord with memory access commands for specified planes. Simultaneous operations of different type in different planes and nested operations in the same plane are possible.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: September 6, 2005
    Assignee: Atmel Corporation
    Inventors: Sai K. Tsang, Steven J. Schumann, Fai Ching
  • Patent number: 6930925
    Abstract: In a non-volatile memory, a programming cycle consists of the following phases: high voltage charging up, programming pulse, and discharge. The actual programming process only takes place in the programming pulse phase. Several break points are defined relative to elapsed time and introduced in the programming pulse phase. Upon receiving a suspend request, the programming operation will advance to the next break point, then discharge the high programming voltage and go to a suspend state. A separate counter is used to monitor the break points so that elapsed non-programming time can be deducted from the total programming pulse time when the programming operation is resumed. By doing so, the device can handle frequent suspend and resume requests. Since the total time duration in the programming pulse phase is equal for the programming operation with and without suspend and resume requests, the programming proceeds efficiently to completion.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: August 16, 2005
    Assignee: Atmel Corporation
    Inventors: Jason Xiaojiang Guo, Fai Ching
  • Publication number: 20050081011
    Abstract: An apparatus and method identify a plurality of words to be read, read these selected words during a clock latency period, and then shift these words out synchronously at an end of the latency period. In another aspect of the present invention, the above method of reading a plurality of words during a clock latency period and shifting them out synchronously after the latency period is facilitated by a two tier column decoder. The two-tier column decoder has two decoders. A first-tier decoder decodes a first group of words to be read during the latency period, and a second-tier decoder decodes subsequent words to be shifted out synchronously during a burst period.
    Type: Application
    Filed: October 14, 2003
    Publication date: April 14, 2005
    Inventors: Vikram Kowshik, Fai Ching, Steven Schumann
  • Publication number: 20050078528
    Abstract: A decoding system for multi-plane memories routes address information corresponding to distinct memory access operations to the designated planes. The system includes an array of functional registers dedicated to random access read, burst read, program, erase, and erase-suspend program operations. Plane selector blocks for each plane receive the address outputs from all of the registers and plane function select logic controls the routing in accord with memory access commands for specified planes. Simultaneous operations of different type in different planes and nested operations in the same plane are possible.
    Type: Application
    Filed: October 14, 2003
    Publication date: April 14, 2005
    Inventors: Sai Tsang, Steven Schumann, Fai Ching
  • Publication number: 20050078525
    Abstract: In a non-volatile memory, a programming cycle consists of the following phases: high voltage charging up, programming pulse, and discharge. The actual programming process only takes place in the programming pulse phase. Several break points are defined relative to elapsed time and introduced in the programming pulse phase. Upon receiving a suspend request, the programming operation will advance to the next break point, then discharge the high programming voltage and go to a suspend state. A separate counter is used to monitor the break points so that elapsed non-programming time can be deducted from the total programming pulse time when the programming operation is resumed. By doing so, the device can handle frequent suspend and resume requests. Since the total time duration in the programming pulse phase is equal for the programming operation with and without suspend and resume requests, the programming proceeds efficiently to completion.
    Type: Application
    Filed: October 14, 2003
    Publication date: April 14, 2005
    Inventors: Jason Guo, Fai Ching
  • Patent number: 5732017
    Abstract: A nonvolatile memory device includes two floating-gate-type memory arrays, e.g. a flash memory intended to be used as a relatively permanent program memory and an E.sup.2 PROM intended to be used as a more frequently updated data memory. A single set of address lines and a single set of data lines are used for both read and write operations for both memory arrays. Address decoding means for accessing an addressed location of a selected memory array includes separate column decoders and data latches for each array, but also includes a shared row decoder common to both arrays. Row address latching circuitry associated with at least the data memory holds a decoded row address for that memory array during a write operation so as to free the shared row decoder for use on one or more concurrent read operations for the other memory array, e.g. the program memory. Data I/O buffer circuitry and sense amplifiers are also shared by both arrays.
    Type: Grant
    Filed: March 31, 1997
    Date of Patent: March 24, 1998
    Assignee: Atmel Corporation
    Inventors: Steven J. Schumann, Fai Ching, Sai K. Tsang