Abstract: Disclosed are complex semiconductor packages, each including a large power module package which includes a small semiconductor package, and methods of manufacturing the complex semiconductor packages. An exemplary complex semiconductor package includes a first package including: a first packaging substrate; a plurality of first semiconductor chips disposed on the first packaging substrate; and a first sealing member covering the first semiconductor chips on the first packaging substrate; and at least one second package separated from the first packaging substrate, disposed in the first sealing member, and including second semiconductor chips.

Abstract: Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer.

Abstract: The present invention relates to a switch controller, a switch control method, and a power supply including the switch controller. An exemplary embodiment of the present invention detects an on-time of a power switch of the power supply and decreases a frequency of a clock signal according to a period during which the detected on-time is shorter than or equal to the minimum on-time. According to the exemplary embodiment, switching of the power switch is controlled according to a clock signal, and the minimum on-time is an on period of the power switch that cannot be shortened.

Abstract: The present invention relates to a converter, a switch controller controlling switching operation of a power switch in the converter, and a switch control method. An exemplary embodiment of the present invention generates a reference current corresponding to an output current of the converter and generates a control voltage that depends on the reference current. The exemplary embodiment controls an increase or a decrease of the control voltage and determines a switching frequency of the power switch according to the control voltage. The exemplary embodiment controls on-time of the power switch using a reference voltage determined according to a control current that depends on the reference current.

Abstract: Exemplary embodiments relate to a control voltage delay device, a digital power converter, and a driving method of a digital power converter. The control voltage delay device generates an output clock signal and a reference clock signal for controlling an output voltage of the digital power converter. The control voltage delay device generates the output clock signal having an output delay to a clock signal according to the output voltage and the reference clock signal having a reference delay to the clock signal according to the reference voltage. The reference voltage is a target value of the output voltage.

Abstract: The present invention relates to a protection circuit, a resonance converter having the same, and a protection method thereof. A resonance converter having high-side and low-side switches senses a current flowing through the low-side switch and determines a zero voltage switching failure by using a width of a current flowing to a negative direction of the low-side switch.