Abstract: A fluid sensor cable assembly and method uses one or more conductive bodies extending along an elongated core body for conducting a heating current to heat the cable assembly. The one or more conductive bodies also are configured to conduct an interrogation signal and to conduct reflections of the interrogation signal. One or more optical fibers extend along the length of the core body and include temperature sensitive elements at different locations along the length of the core body. The temperature sensitive elements measure heat flux out of the cable assembly at the different locations subsequent to heating the cable assembly and communicate the heat flux to a computer acquisition system.

Abstract: A fluid sensor cable assembly and method uses one or more conductive bodies extending along an elongated core body for conducting a heating current to heat the cable assembly. The one or more conductive bodies also are configured to conduct an interrogation signal and to conduct reflections of the interrogation signal. One or more optical fibers extend along the length of the core body and include temperature sensitive elements at different locations along the length of the core body. The temperature sensitive elements measure heat flux out of the cable assembly at the different locations subsequent to heating the cable assembly and communicate the heat flux to a computer acquisition system.

Abstract: Composite foams are provided including a metal template and a conformal atomic-scale film disposed over such metal template to form a 3-dimensional interconnected structure. The metal template includes a plurality of sintered interconnects, having a plurality of first non-spherical pores, a first non-spherical porosity, and a first surface-area-to-volume ratio. The conformal atomic-scale film has a plurality of second non-spherical pores, a second non-spherical porosity, and a second surface-area-to-volume ratio approximately equal to the first surface-area-to-volume ratio. The plurality of sintered interconnects has a plurality of dendritic particles and the conformal atomic-scale film includes at least one of a layer of graphene and a layer of hexagonal boron nitride.

Abstract: Composite foams are provided including a metal template and a conformal atomic-scale film disposed over such metal template to form a 3-dimensional interconnected structure. The metal template includes a plurality of sintered interconnects, having a plurality of first non-spherical pores, a first non-spherical porosity, and a first surface-area-to-volume ratio. The conformal atomic-scale film has a plurality of second non-spherical pores, a second non-spherical porosity, and a second surface-area-to-volume ratio approximately equal to the first surface-area-to-volume ratio. The plurality of sintered interconnects has a plurality of dendritic particles and the conformal atomic-scale film includes at least one of a layer of graphene and a layer of hexagonal boron nitride.

Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.

Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.

Abstract: A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source into at least a portion of the semiconductor material; and (c) disposing a window layer on the semiconductor layer after the step (b).

Abstract: A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source into at least a portion of the semiconductor material; and (c) disposing a window layer on the semiconductor layer after the step (b).

Abstract: A sensor is provided. The sensor includes a substrate, a waveguide having a first surface and a second surface, wherein the waveguide is disposed on the substrate such that at least a portion of the second surface of the waveguide is in physical contact with the substrate, a holder component disposed on at least a portion of the substrate, or the waveguide, or both, wherein the holder component comprises one or more cavities. The sensor further includes at least one microsphere at least partially disposed in a corresponding cavity of the holder component.

Abstract: A method includes supplying current to at least one photovoltaic device via a current source and detecting emitted photon radiations from the at least one photovoltaic device via a radiation detector. The method also includes outputting a signal corresponding to the detected emitted photon radiations from the radiation detector to a processor device, and processing the signal corresponding to the detected emitted photon radiations via the processor device to generate one or more two-dimensional photon images. The method further includes analyzing the one or more two-dimensional photon images to determine at least one defect in the at least one photovoltaic device.

Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.

Abstract: A photovoltaic device is provided. The device comprises a transparent conducting layer. A p-type semiconductor window layer is disposed over the n-type transparent conducting layer. An n-type semiconductor layer is disposed over the p-type semiconductor window layer. An n-type cadmium telluride absorber layer is disposed between the p-type semiconductor window layer and the n-type semiconductor layer.

Abstract: Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material.

Abstract: A sensor is provided. The sensor includes a substrate, a waveguide having a first surface and a second surface, wherein the waveguide is disposed on the substrate such that at least a portion of the second surface of the waveguide is in physical contact with the substrate, a holder component disposed on at least a portion of the substrate, or the waveguide, or both, wherein the holder component comprises one or more cavities. The sensor further includes at least one microsphere at least partially disposed in a corresponding cavity of the holder component.

Abstract: A photovoltaic (PV) cell is disclosed. The PV cell comprises, a plurality of ultrafine structures electrically coupled to, and embedded within, a polycrystalline photo-active absorber layer comprising a p-type compound semiconductor.

Abstract: A method includes supplying current to at least one photovoltaic device via a current source and detecting emitted photon radiations from the at least one photovoltaic device via a radiation detector. The method also includes outputting a signal corresponding to the detected emitted photon radiations from the radiation detector to a processor device, and processing the signal corresponding to the detected emitted photon radiations via the processor device to generate one or more two-dimensional photon images. The method further includes analyzing the one or more two-dimensional photon images to determine at least one defect in the at least one photovoltaic device.

Abstract: A photovoltaic (PV) cell is disclosed. The PV cell comprises a plurality of ultrafine structures embedded within a photo-active absorber layer comprising a n-type compound semiconductor.

Abstract: A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer is substantially free of silicon. A method of forming the photovoltaic device is provided.

Abstract: A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented.

Abstract: A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed.