Patents by Inventor Faisal Sudradjat
Faisal Sudradjat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200308025Abstract: A UVC disinfection system is described where incoming fluid, such as water, is directed onto a transparent window in a vertical disinfection chamber. The incoming water is directed downward by a channel at an acute angle (e.g., 10-20 degrees) with respect to a central axis of the disinfection chamber and impinges on the window at an angle almost perpendicular to the window surface. One or more UVC LEDs are optically coupled to the window. The water impinging on the window becomes agitated due to the severe redirection and interaction with water already in the chamber. This randomizes (mixes) the water in the area where there is the highest UVC power. The UVC LEDs direct light along the central axis of the cylindrical chamber for maximum exposure of the water to the UVC light. Disinfection efficiency is therefore increased.Type: ApplicationFiled: March 25, 2019Publication date: October 1, 2020Inventors: Douglas A. Collins, Li Zhang, Wei Keat Chai, Faisal Sudradjat, Yitao Liao
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Patent number: 10490597Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.Type: GrantFiled: September 9, 2016Date of Patent: November 26, 2019Assignee: RayVio CorporationInventors: Douglas A. Collins, Li Zhang, Faisal Sudradjat
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Patent number: 10454005Abstract: Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A transparent encapsulant is disposed over the UVLED. The transparent encapsulant has an angled sidewall.Type: GrantFiled: August 22, 2018Date of Patent: October 22, 2019Assignee: RayVio CorporationInventors: Faisal Sudradjat, Saijin Liu, Douglas A. Collins
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Patent number: 10224443Abstract: An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.Type: GrantFiled: April 17, 2017Date of Patent: March 5, 2019Assignee: RayVio CorporationInventors: Douglas A. Collins, Faisal Sudradjat, Robert C. Walker, Yitao Liao
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Patent number: 10062817Abstract: Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A transparent encapsulant is disposed over the UVLED. The transparent encapsulant has an angled sidewall.Type: GrantFiled: January 10, 2017Date of Patent: August 28, 2018Assignee: RayVio CorporationInventors: Faisal Sudradjat, Saijin Liu, Douglas A. Collins
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Publication number: 20170222075Abstract: An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.Type: ApplicationFiled: April 17, 2017Publication date: August 3, 2017Inventors: Douglas A. Collins, Faisal Sudradjat, Robert C. Walker, Yitao Liao
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Patent number: 9627579Abstract: An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.Type: GrantFiled: November 13, 2015Date of Patent: April 18, 2017Assignee: RayVio CorporationInventors: Douglas A. Collins, Faisal Sudradjat, Robert C. Walker, Yitao Liao
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Patent number: 9455300Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.Type: GrantFiled: March 19, 2015Date of Patent: September 27, 2016Assignee: RayVio CorporationInventors: Douglas A. Collins, Li Zhang, Faisal Sudradjat
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Publication number: 20160079495Abstract: An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.Type: ApplicationFiled: November 13, 2015Publication date: March 17, 2016Inventors: Douglas A. COLLINS, Faisal SUDRADJAT, Robert C. WALKER, Yitao LIAO
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Patent number: 9219204Abstract: The present invention provides an LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm and a method. The device has a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others and an active region overlying the substrate region. The active region comprises a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The device has an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.Type: GrantFiled: March 11, 2014Date of Patent: December 22, 2015Assignee: RAYVIO CORPORATIONInventors: Douglas A. Collins, Faisal Sudradjat, Robert C. Walker, Yitao Liao