Patents by Inventor Fan Chen

Fan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230068053
    Abstract: An inverter device includes a converter circuit and a filter. The converter circuit converts a DC input voltage into an AC intermediate voltage based on six control signals, and includes first and second converters. Each of the first and second converters includes three switches, two diodes and a coupled inductor circuit. The switches of the first converter operate respectively based on three of the control signals. The switches of the second converter operate respectively based on the other three of the control signals. The filter filters the AC intermediate voltage to generate an AC output voltage.
    Type: Application
    Filed: January 6, 2022
    Publication date: March 2, 2023
    Inventors: Chien-Hsuan CHANG, Yi-Fan CHEN
  • Publication number: 20230065887
    Abstract: A compound of Formula I, is provided. In Formula I, one of Z1, Z2, and Z3 is N and the remainder are C; each of L1 and L2 is independently selected from a direct bond and a linking group; at least one of R1, R2, RA, RB, RC, RD, and RE comprises a group R* having a structure selected form the group consisting of Formula II, -Q(R3)(R4)a(R5)b, Formula III, and Formula IV, Each R, R?, R?, R1, R2, R3, R4, R5, RA, RB, RC, RD, RE, RF, RG, and RH is independently hydrogen or a General Substituent, with the proviso that group R* is not adamantyl. Formulations, OLEDs, and consumer products containing the compound are also provided.
    Type: Application
    Filed: August 31, 2022
    Publication date: March 2, 2023
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Hsiao-Fan CHEN, Geza SZIGETHY, Rasha HAMZE, Nicholas J. THOMPSON, Hojae CHOI, Weiye GUAN, Raghupathi NEELARAPU, Charles J. STANTON, Douglas WILLIAMS, Ving Jick LEE
  • Publication number: 20230060692
    Abstract: A method includes: transporting a wafer to an apparatus, the apparatus including: a first chamber configured to receive the wafer and a first gas; a second chamber surrounding the first chamber and configured to receive a second gas; a plurality of gas inlets on a chamber wall of the second chamber; and a plurality of gas vents on the chamber wall of the second chamber; heating the first chamber while keeping a gas pressure difference between the first chamber and the second chamber within a tolerance limit; and cooling the first chamber by exchanging the second gas in the second chamber while keeping the gas pressure difference within the tolerance limit.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Inventors: YI-FAN CHEN, SEN-HONG SYUE, HUICHENG CHANG, YEE-CHIA YEO
  • Patent number: 11591356
    Abstract: Provided is an organometallic complex including a ligand LA having a structure represented by one of the following formulas and coordiated to Ir.
    Type: Grant
    Filed: December 29, 2020
    Date of Patent: February 28, 2023
    Assignee: UNIVERSAL DISPLAY CORPORATION
    Inventors: Hsiao-Fan Chen, Chun Lin, Jerald Feldman, Zhiqiang Ji, Daniel W. Silverstein
  • Patent number: 11587210
    Abstract: In one embodiment, a method includes a computer system accessing a curvilinear image captured using a camera lens, generating multiple rectilinear images from the curvilinear image based at least in part on one or more calibration parameters associated with the camera lens, identifying semantic information in one or more of the rectilinear images by processing each of the multiple rectilinear images using a machine-learning model configured to identify semantic information in rectilinear images, and identifying semantic information in the curvilinear image based on the identified semantic information in the one or more rectilinear images.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: February 21, 2023
    Assignee: Meta Platforms Technologies, LLC
    Inventors: Yu Fan Chen, Kiran Kumar Somasundaram, Steven John Lovegrove, Yujun Shen
  • Patent number: 11587881
    Abstract: A substrate structure is disclosed. The substrate structure includes a carrier, a dielectric layer on the carrier, a patterned organic core layer in the dielectric layer, and a conductive via. The patterned organic core layer defines a passage extending in the dielectric layer towards the carrier. The conductive via extends through the passage towards the carrier without contacting the patterned organic core layer.
    Type: Grant
    Filed: March 9, 2020
    Date of Patent: February 21, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chien-Fan Chen, Yu-Ju Liao, Chu-Jie Yang, Sheng-Hung Shih
  • Publication number: 20230049161
    Abstract: Provided are compounds comprising a first ligand LA; wherein LA comprises a 5-membered heterocycle joined to a metal M by a M-C or M-N bond; wherein the 5-membered heterocycle comprises at least one boron atom; wherein M is selected from the group consisting of Os, Ir, Pd, Pt, Cu, Ag, and Au; and wherein LA does not comprise a structure of Formula I. wherein X is B or N; with the proviso that the 5-membered heterocycle does not comprise a B—B bond; and with the proviso that if M is Pd or Pt and the 5-membered heterocycle is fused to a benzene ring, the benzene ring is not part of a 6-membered chelate ring comprising M. Also provided are formulations comprising these compounds. Further provided are OLEDs and related consumer products that utilize these compounds.
    Type: Application
    Filed: June 17, 2022
    Publication date: February 16, 2023
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Rasha HAMZE, Matthew ASAY, Morgan C. MACINNIS, Alexey Borisovich DYATKIN, Hsiao-Fan CHEN, Wei-Chun SHIH, Jerald FELDMAN, Chun LIN, Tyler FLEETHAM, Elena SHEINA, George FITZGERALD
  • Publication number: 20230041530
    Abstract: A compound of Formula I, is disclosed. In Formula I, M is Pd or Pt; each of X1 to X12 is C or N; each of X13 and X14 is CH, CD or N; each of Z1, Z2, and Z3 is C or N; L1 is selected from a variety of bivalent linkers; X is selected from O, S, Se, NR?, and CR?R??; each R, R?, R1, R2, R3, RA, RB, RC, RD, and RE is hydrogen or a General Substituent; at least one of Z1, Z2, and Z3 is a carbon atom substituted with a substituent with a molecular weight of at least 16. Formulations, OLEDs, and consumer products that include Formula I are also disclosed.
    Type: Application
    Filed: June 2, 2022
    Publication date: February 9, 2023
    Applicant: Universal Display Corporation
    Inventors: Tyler FLEETHAM, Hsiao-Fan CHEN, Nicholas J. THOMPSON
  • Patent number: 11574997
    Abstract: A semiconductor structure including a substrate, a first well, a second well, a first doped region, a second doped region, a gate electrode, an insulating layer, a field plate, and a tunable circuit is provided. The first and second wells are formed on the substrate. The first doped region is formed in the first well. The second doped region is formed in the second well. The gate electrode is disposed over the substrate. The gate electrode, the first doped region, and the second doped region constitute a transistor. The insulating layer is disposed on the substrate and overlaps the gate electrode. The field plate overlaps the insulating layer and the gate electrode. The tunable circuit provides either a first short-circuit path between the field plate and the gate electrode, or a second short-circuit path between the field plate and the first doped region.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: February 7, 2023
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Shao-Chang Huang, Li-Fan Chen, Ching-Ho Li, Gong-Kai Lin, Chieh-Yao Chuang
  • Publication number: 20230034420
    Abstract: A semiconductor structure including a substrate, a first well, a second well, a first doped region, a second doped region, a gate electrode, an insulating layer, a field plate, and a tunable circuit is provided. The first and second wells are formed on the substrate. The first doped region is formed in the first well. The second doped region is formed in the second well. The gate electrode is disposed over the substrate. The gate electrode, the first doped region, and the second doped region constitute a transistor. The insulating layer is disposed on the substrate and overlaps the gate electrode. The field plate overlaps the insulating layer and the gate electrode. The tunable circuit provides either a first short-circuit path between the field plate and the gate electrode, or a second short-circuit path between the field plate and the first doped region.
    Type: Application
    Filed: August 2, 2021
    Publication date: February 2, 2023
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Shao-Chang HUANG, Li-Fan CHEN, Ching-Ho LI, Gong-Kai LIN, Chieh-Yao CHUANG
  • Publication number: 20230036181
    Abstract: Disclosed herein are antibodies and compositions used for binding to Gal3. Some embodiments allow for disrupting interactions between Galectin-3 (Gal3) and cell surface markers and/or proteins associated with neurological diseases and/or proteopathies, such as Alzheimer's disease. Additionally, disclosed herein are methods of treatment and uses of the antibodies or binding fragments thereof for the treatment of fibrosis, liver fibrosis, kidney fibrosis, cardiac fibrosis, pulmonary fibrosis, non-alcoholic fatty liver disease, non-alcoholic steatohepatitis, sepsis, atopic dermatitis, psoriasis, cancer, brain cancer, breast cancer, colorectal cancer, kidney cancer, liver cancer, lung cancer, pancreatic cancer, bladder cancer, stomach cancer, hematological malignancy, neurological diseases and/or proteopathies. Furthermore, some embodiments provided herein can cross the blood-brain barrier and can be conjugated or otherwise associated with one or more payloads for the treatment of a neurological disease.
    Type: Application
    Filed: July 12, 2022
    Publication date: February 2, 2023
    Inventors: Dongxu Sun, Suhail Rasool, Catherine A. Gordon, Ke Hong, Fan Chen, Sara Matilda Bolin, Ksenya Shchors, Yadong Yu, Tsung-Huang Tsai, Samuel A.F. Williams, Karan Lala, Heng Wu, Yan Wang
  • Patent number: 11566035
    Abstract: A compound having a formula: Formula I useful as emitters in OLEDs is disclosed.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: January 31, 2023
    Assignee: Universal Display Corporation
    Inventors: Hsiao-Fan Chen, Mingjuan Su
  • Publication number: 20230023360
    Abstract: Provided organic light emitting device (OLED) comprising compounds having Formula I: wherein rings A, B, C, D, E, and F are each independently a single or fused ring system, consisting of one or more 5-membered or 6-membered carbocyclic or heterocyclic rings; L1, L2, L3, L4, L5, and L6 are each independently optionally present or is selected from the group consisting of O, S, Se, BR, BRR?, NR, C?R, CRR?, SiRR?, P(O)R, and GeRR?; a, b, c, d, e and f are each 0 for not present or 1 for present; each of R, R?, R1, R2, R3, R4, R5, and R6 is independently a hydrogen or a substituent; and any two of adjacent R, R?, R1, R2, R3, R4, R5, and R6 can be joined or fused to form a ring. The compound is an ETL.
    Type: Application
    Filed: August 31, 2022
    Publication date: January 26, 2023
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Peter WOLOHAN, Tyler FLEETHAM, Hsiao-Fan CHEN, Fadi M. JRADI
  • Publication number: 20230014761
    Abstract: Provided are boron substituted organometallic compounds of Formula I: Also provided are formulations including these organometallic compounds. Further provided are OLEDs and related consumer products that utilize these organometallic compounds.
    Type: Application
    Filed: October 5, 2021
    Publication date: January 19, 2023
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Tyler FLEETHAM, Hsiao-Fan CHEN, Scott BEERS
  • Publication number: 20230018990
    Abstract: A compound including a bidentate ligand LA comprising a structure of Formula I, is disclosed. In Formula I, ring A? is a 7-, 8-, or 9-membered ring structure; X is of NR2, O, CR, CRR?, S, or SiRR?; each of RA?, R1, and R2 is independently hydrogen or a substituent; R1? is independently absent or a hydrogen or a substituent; any two adjacent RA?, R1, R1?, and R2 can be joined or fused to form a ring; the ligand LA is coordinated to a metal, which is selected from Os, Ir, Pd, Pt, Cu, Ag, or Au; and (1) at least one of R1 and R2 is coordinated to the metal M, or (2) at least one RA? comprises a 5- or 6-membered carbocyclic or heterocyclic ring that is not directly fused to Ring A? and is coordinated to the metal M, or both (1) and (2) are true. Formulations, devices, and consumer products including the compound are also disclosed.
    Type: Application
    Filed: April 25, 2022
    Publication date: January 19, 2023
    Applicant: Universal Display Corporation
    Inventors: Hsiao-Fan CHEN, Joseph A. MACOR, Neil PALMER, Peter WOLOHAN, Tyler FLEETHAM, Geza SZIGETHY, Rasha HAMZE
  • Publication number: 20230012425
    Abstract: A replaceable tool is provided, including: a main body, including a connecting hole extending along a first axis; a control member, inserted within the main body and including a detent member, being movable between a locked position and a release position along a second axis lateral to the first axis; wherein when the control member is located in the locked position, the detent member radially protrudes within the connecting hole; when the control member moves from the locked position to the release position, the detent member is away from the first axis.
    Type: Application
    Filed: July 7, 2021
    Publication date: January 12, 2023
    Inventor: Jun-Fan CHEN
  • Patent number: 11552261
    Abstract: A compound having the following formula Formula I, is disclosed. The compound is useful as an emitter in OLED applications.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: January 10, 2023
    Assignee: UNIVERSAL DISPLAY CORPORATION
    Inventors: Hsiao-Fan Chen, Tyler Fleetham
  • Patent number: 11553596
    Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: January 10, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chien-Fan Chen, Chien-Hao Wang
  • Patent number: 11552230
    Abstract: A pixel array substrate includes a base, pixel structures, first bonding pads, first wirings, and a first testing element. The pixel structures are disposed on an active area of a first surface of the base. The first bonding pads are disposed on a peripheral region of the first surface. Each of the first wirings is disposed on a corresponding first bonding pad, a first sidewall of the base, and a corresponding second bonding pad. The first testing element is disposed on the active area of the first surface and has a first testing line. The first testing line is electrically connected to at least one of the first bonding pads, and an end of the first testing line is substantially aligned with an edge of the base.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: January 10, 2023
    Assignee: Au Optronics Corporation
    Inventors: Shang-Jie Wu, Hao-An Chuang, Yu-Chieh Kuo, He-Yi Cheng, Che-Chia Chang, Yi-Jung Chen, Yi-Fan Chen, Yu-Hsun Chiu, Mei-Yi Li, Yu-Chin Wu
  • Publication number: 20230005847
    Abstract: A method includes forming a plurality of low-k dielectric layers over a semiconductor substrate, forming a first plurality of dummy stacked structures extending into at least one of the plurality of low-k dielectric layers, forming a plurality of non-low-k dielectric layers over the plurality of low-k dielectric layers, and forming a second plurality of dummy stacked structures extending into the plurality of non-low-k dielectric layers. The second plurality of dummy stacked structures are over and connected to corresponding ones of the first plurality of dummy stacked structures. The method further includes etching the plurality of non-low-k dielectric layers, the plurality of low-k dielectric layers, and the semiconductor substrate to form a via opening. The via opening is encircled by the first plurality of dummy stacked structures and the second plurality of dummy stacked structures. The via opening is then filled to form a through-via.
    Type: Application
    Filed: September 2, 2021
    Publication date: January 5, 2023
    Inventors: Mingni Chang, Yun-Chin Tsou, Ching-Jing Wu, Shiou-Fan Chen, Ming-Yih Wang