Patents by Inventor Fan-Chi Tseng

Fan-Chi Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and method of forming a semiconductor material wafer
    Patent number: 7387948
    Abstract: A structure and method of forming a semiconductor material wafer comprising forming an ingot of semiconductor material. A first dielectric layer is formed on the surface of the ingot, and the surface of the first dielectric layer is larger than the surface of the ingot. A second dielectric layer is formed on the surface of the first dielectric layer, and the surface of the second dielectric layer is larger than the surface of the first dielectric layer. The semiconductor wafer structure comprises a slip core formed of a semiconductor material, a first annular portion, and a second annular portion. The slip core had a first outer peripheral. The first annular portion is adjacent to the first outer peripheral, and is formed of a first dielectric material. The first annular portion has a second outer peripheral being larger than the first outer peripheral. The second annular portion is adjacent to the second outer peripheral, and is formed of a second dielectric material.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: June 17, 2008
    Assignee: Grace Semiconductor Manufacturing Corporation
    Inventor: Fan-Chi Tseng
  • Structure and method of forming a semiconductor material wafer
    Publication number: 20070032093
    Abstract: A structure and method of forming a semiconductor material wafer comprising forming an ingot of semiconductor material. A first dielectric layer is formed on the surface of the ingot, and the surface of the first dielectric layer is larger than the surface of the ingot. A 5 second dielectric layer is formed on the surface of the first dielectric layer, and the surface of the second dielectric layer is larger than the surface of the first dielectric layer. The semiconductor wafer structure comprises a slip core formed of a semiconductor material, a first annular portion, and a second annular portion. The slip core had a first outer peripheral. The first annular portion is adjacent to the first outer peripheral, and is formed of a first dielectric material. The first annular portion has a second outer peripheral being larger than the first outer peripheral. The second annular portion is adjacent to the second outer peripheral, and is formed of a second dielectric material.
    Type: Application
    Filed: August 4, 2005
    Publication date: February 8, 2007
    Inventor: Fan-Chi Tseng