Patents by Inventor Fan-Chun Tseng

Fan-Chun Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140130637
    Abstract: A method is used to make an aluminum alloy with excellent tensile strength, low density and excellent radiation. The method includes the steps of providing a base material, adding 0.06 wt % to 0.30 wt % of zirconium and 0.06 wt % to 0.30 wt % of vanadium to the base material, and melting the basic material with the zirconium and vanadium to provide an aluminum alloy. The base material includes 92.55 wt % to 97.38 wt % of aluminum, 0.9 wt % to 1.8 wt % of silicon, less than 0.5 wt % of iron, 0.6 wt % to 1.2 wt % of copper, 0.4 wt % to 1.1 wt % of manganese, 0.6 wt % to 1.4 wt % of magnesium, less than 0.40 wt % of chromium, less than 0.25 wt % of zinc and less than 0.20 wt % of titanium.
    Type: Application
    Filed: January 16, 2014
    Publication date: May 15, 2014
    Applicant: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
    Inventors: Chang-Chuan Hsu, Shan Torng, Sy-Cherng Yang, Fan-Chun Tseng, Wei-Ming Huang, Ren-An Luo
  • Publication number: 20130269480
    Abstract: A method is used to make an aluminum alloy with excellent tensile strength, low density and excellent radiation. The method includes the steps of providing a base material, adding 0.06 wt % to 0.30 wt % of zirconium and 0.06 wt % to 0.30 wt % of vanadium to the base material, and melting the basic material with the zirconium and vanadium to provide an aluminum alloy. The base material includes 92.55 wt % to 97.38 wt % of aluminum, 0.9 wt % to 1.8 wt % of silicon, less than 0.5 wt % of iron, 0.6 wt % to 1.2 wt % of copper, 0.4 wt % to 1.1 wt % of manganese, 0.6 wt % to 1.4 wt % of magnesium, less than 0.40 wt % of chromium, less than 0.25 wt % of zinc and less than 0.20 wt % of titanium.
    Type: Application
    Filed: April 16, 2012
    Publication date: October 17, 2013
    Applicant: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
    Inventors: Chang-Chuan Hsu, Shan Torng, Sy-Cherng Yang, Fan-Chun Tseng, Wei-Ming Huang, Ren-An Luo
  • Publication number: 20080190764
    Abstract: A manufacturing method of sputtering targets uses a direct-chill method to fabricate various aluminum and aluminum alloy ingots. Without the need of follow-up forging processes, the fabricated aluminum alloy ingots can be cut to attain aluminum and aluminum alloy sputtering targets. The method according to the present invention features the advantages of few process steps, high productivity, and high yield. In addition, the fabricated targets have small grains, fine precipitate phases, and homogeneous composition.
    Type: Application
    Filed: February 28, 2008
    Publication date: August 14, 2008
    Inventors: Shan Torng, Chune-Ching Young, Shih-Ying Chen, Po-Chun Hsu, Chia-Hsiang Peng, Fan-Chun Tseng, Ren-An Luo
  • Publication number: 20070137831
    Abstract: A manufacturing method of sputtering targets uses a direct-chill method to fabricate various aluminum and aluminum alloy ingots. Without the need of follow-up forging processes, the fabricated aluminum alloy ingots can be cut to attain aluminum and aluminum alloy sputtering targets. The method according to the present invention features the advantages of few process steps, high productivity, and high yield. In addition, the fabricated targets have small grains, fine precipitate phases, and homogeneous composition.
    Type: Application
    Filed: April 27, 2006
    Publication date: June 21, 2007
    Inventors: Shan Torng, Chune-Ching Young, Shih-Ying Chen, Po-Chun Hsu, Chia-Hsiang Peng, Fan-Chun Tseng, Ren-An Luo