Patents by Inventor Fan-Chung Tseng
Fan-Chung Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8685853Abstract: A method for creating a dual damascene structure while using only one lithography and masking step. Conventional dual damascene structures utilize two lithography steps: one to mask and expose the via, and a second step to mask and expose the trench interconnection. The novel method for creating a dual damascene structure allows for a smaller number of processing steps, thus reducing the processing time needed to complete the dual damascene structure. In addition, a lower number of masks may be needed. The exemplary mask or reticle used within the process incorporates different regions possessing different transmission rates. During the exposing step, light from an exposing source passes through the mask to expose a portion of the photoresist layer on top of the wafer.Type: GrantFiled: April 25, 2011Date of Patent: April 1, 2014Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Fan Chung Tseng, Chi Hsi Wu, Wei Ting Chien
-
Publication number: 20120108054Abstract: A method for creating a dual damascene structure while using only one lithography and masking step. Conventional dual damascene structures utilize two lithography steps: one to mask and expose the via, and a second step to mask and expose the trench interconnection. The novel method for creating a dual damascene structure allows for a smaller number of processing steps, thus reducing the processing time needed to complete the dual damascene structure. In addition, a lower number of masks may be needed. The exemplary mask or reticle used within the process incorporates different regions possessing different transmission rates. During the exposing step, light from an exposing source passes through the mask to expose a portion of the photoresist layer on top of the wafer.Type: ApplicationFiled: April 25, 2011Publication date: May 3, 2012Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Fan Chung Tseng, Chi Hsi Wu, Wei Ting Chien
-
Patent number: 7989341Abstract: A method for creating a dual damascene structure while using only one lithography and masking step. Conventional dual damascene structures utilize two lithography steps: one to mask and expose the via, and a second step to mask and expose the trench interconnection. The novel method for creating a dual damascene structure allows for a smaller number of processing steps, thus reducing the processing time needed to complete the dual damascene structure. In addition, a lower number of masks may be needed. The exemplary mask or reticle used within the process incorporates different regions possessing different transmission rates. During the exposing step, light from an exposing source passes through the mask to expose a portion of the photoresist layer on top of the wafer.Type: GrantFiled: October 6, 2006Date of Patent: August 2, 2011Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Fan Chung Tseng, Chi Hsi Wu, Wei Ting Chien
-
Patent number: 7222945Abstract: A fluid ejection apparatus. The fluid ejection apparatus includes a chamber, a manifold, an orifice, a first bubble generating element and a second bubble generating element. The chamber contains fluid. The manifold is connected to the chamber. The fluid flows into the chamber at a first direction through the manifold. The orifice is connected to the chamber. The first bubble generating element is disposed above the chamber and close to the orifice to generate a first bubble. The first bubble generating element is substantially parallel to the first direction. The second bubble generating element is disposed above the chamber and is substantially parallel to the first direction to generate a second bubble. The second bubble generating element is close to the orifice and opposite to the first bubble generating element. The fluid in the chamber is ejected via the orifice by the first and second bubbles.Type: GrantFiled: June 18, 2004Date of Patent: May 29, 2007Assignee: BENQ CorporationInventors: Fan-Chung Tseng, Kuo-Tong Ma, In-Yao Lee, Te-Jung Hsu
-
Publication number: 20070024673Abstract: A fluid ejection apparatus. The fluid ejection apparatus includes a chamber, a manifold, an orifice, a first bubble generating element and a second bubble generating element. The chamber contains fluid. The manifold is connected to the chamber. The fluid flows into the chamber at a first direction through the manifold. The orifice is connected to the chamber. The first bubble generating element is disposed above the chamber and close to the orifice to generate a first bubble. The first bubble generating element is substantially parallel to the first direction. The second bubble generating element is disposed above the chamber and is substantially parallel to the first direction to generate a second bubble. The second bubble generating element is close to the orifice and opposite to the first bubble generating element. The fluid in the chamber is ejected via the orifice by the first and second bubbles.Type: ApplicationFiled: September 28, 2006Publication date: February 1, 2007Applicant: BENQ CORPORATIONInventors: Fan-Chung Tseng, Kuo-Tong Ma, In-Yao Lee, Te-Jung Hsu
-
Publication number: 20040263576Abstract: A fluid ejection apparatus. The fluid ejection apparatus includes a chamber, a manifold, an orifice, a first bubble generating element and a second bubble generating element. The chamber contains fluid. The manifold is connected to the chamber. The fluid flows into the chamber at a first direction through the manifold. The orifice is connected to the chamber. The first bubble generating element is disposed above the chamber and close to the orifice to generate a first bubble. The first bubble generating element is substantially parallel to the first direction. The second bubble generating element is disposed above the chamber and is substantially parallel to the first direction to generate a second bubble. The second bubble generating element is close to the orifice and opposite to the first bubble generating element. The fluid in the chamber is ejected via the orifice by the first and second bubbles.Type: ApplicationFiled: June 18, 2004Publication date: December 30, 2004Applicant: BENQ CORPORATIONInventors: Fan-Chung Tseng, Kuo-Tong Ma, In-Yao Lee, Te-Jung Hsu
-
Publication number: 20040165048Abstract: A method for filling an ink into an ink cartridge. A filter or an ink passage is treated with a surfactant to increase its hydrophilicity. Therefore, during ink filling, the ink can pass through the filter smoothly or air in the ink passage can be purged without any external force such as a vacuum, thus preventing cracks in the nozzle on the printhead chip.Type: ApplicationFiled: February 20, 2004Publication date: August 26, 2004Applicant: BENQ CORPORATIONInventors: Kuo-Tong Ma, In-Shan Sir, Yuh-Ming Hsieh, Fan-Chung Tseng