Abstract: An information input device includes: a communication interface configured to communicate with each of a first external apparatus that operates using a first operating system and a second external apparatus that operates using a second operating system; and a controller configured to operate in a first mode corresponding to a first driver used by the first external apparatus when transferring data to the first external apparatus, and operate in a second mode corresponding to a second driver different from the first driver and used by the second external apparatus when transferring data to the second external apparatus.

Abstract: An information input device includes: a communication interface configured to communicate with each of a first external apparatus that operates using a first operating system and a second external apparatus that operates using a second operating system; and a controller configured to operate in a first mode corresponding to a first driver used by the first external apparatus when transferring data to the first external apparatus, and operate in a second mode corresponding to a second driver different from the first driver and used by the second external apparatus when transferring data to the second external apparatus.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: An information input device includes: a communication interface configured to communicate with each of a first external apparatus that operates using a first operating system and a second external apparatus that operates using a second operating system; and a controller configured to operate in a first mode corresponding to a first driver used by the first external apparatus when transferring data to the first external apparatus, and operate in a second mode corresponding to a second driver different from the first driver and used by the second external apparatus when transferring data to the second external apparatus.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

Abstract: As the richest source of astaxanthin, a natural antioxidant and coloring agent, the unicellular green alga, Haematococcus pluvialis, is being commercially exploited. A major constraint in the Haematococcus production system, however, is the thick, rigid cell walls associated with astaxanthin-rich cysts (or aplanospores). The thick walls prevent the extraction of cellular materials and consequently reduce the bioavailability of astaxanthin. Using a physical, chemical, or enzymatic method to disrupt the cell wall has proven to be very expensive and also introduce the risk of oxidation of astaxanthin by atmospheric oxygen The present invention provides a novel method for solving this problem by introducing two genetically modified Haematococcus pluvialis mutants. These two mutants, named as D 13-17 and N54-22, contain remarkably reduced amounts of cell wall materials, but retain the growth potential and ability to accumulate astaxanthin as high as the wild type strain.