Patents by Inventor Fan Jin

Fan Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting diode
    Patent number: 8841688
    Abstract: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index n1 of the second optical symmetric layer and a second effective refractive index n2 of an integrated structure satisfy |n1?n2|?0.5, wherein the integrated structure includes the substrate, the first semiconductor layer, the active layer, the second semiconductor layer, and the first optical symmetric layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: September 23, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Jun Zhu, Hao-Su Zhang, Zhen-Dong Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Method for making light emitting diode
    Patent number: 8841149
    Abstract: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: September 23, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Jun Zhu, Hao-Su Zhang, Zhen-Dong Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Method for measuring light intensity distribution
    Patent number: 8830453
    Abstract: A method for measuring intensity distribution of light includes a step of providing a carbon nanotube array located on a surface of a substrate. The carbon nanotube array has a top surface away from the substrate. The carbon nanotube array with the substrate is located in an inertia environment or a vacuum environment. A light source irradiates the top surface of the carbon nanotube array, to make the carbon nanotube array radiate a visible light. A reflector is provided, and the visible light is reflected by the reflector. An imaging element images the visible light reflected by the reflector, to obtain an intensity distribution of the light source.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: September 9, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Jun Zhu, Jing-Lei Zhu, Kai-Li Jiang, Chen Feng, Ji-Qing Wei, Guo-Fan Jin, Shou-Shan Fan
  • METHOD FOR PRESENTING A PHOTO GALLERY AND TERMINAL DEVICE THEREOF
    Publication number: 20140240247
    Abstract: Embodiments of the present disclosure disclose a method for presenting a photo gallery in a terminal device and the terminal device thereof The method may comprise: detecting a sliding path of a touch operation on a screen of a terminal device; and performing an operation on a predetermined area and presenting pictures of the photo gallery according to a photo gallery operation mode to which the sliding path corresponds. When the photo gallery is initiated to display the pictures, the predetermined area may be automatically hidden according to the sliding path generated on the screen of the terminal device by a user, thereby increases display area for the pictures in the photo gallery, reduces the amount of sliding actions for presenting the pictures, saves time taken for processing the pictures, and improves user experience.
    Type: Application
    Filed: December 27, 2013
    Publication date: August 28, 2014
    Applicant: Xiaomi Inc.
    Inventors: Fan Jin, Yan Wang, Jingwei Cai, Shen Li
  • Method for making light emitting diode
    Patent number: 8809087
    Abstract: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. a second optical symmetric layer is then disposed on a surface of the first symmetric layer away from the substrate. A first electrode is applied to electrically connect the first semiconductor layer. A second electrode is applied to electrically connect the second semiconductor layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 19, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Jun Zhu, Hao-Su Zhang, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Light emitting diode
    Patent number: 8809887
    Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked on the substrate in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index n1 of the second optical symmetric layer, a second effective refractive index n2 of an integrated structure satisfy |n1?n2|?0.5, wherein the integrated structure includes the substrate, the first semiconductor layer, the active layer, the second semiconductor layer, and the first optical symmetric layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 19, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Jun Zhu, Hao-Su Zhang, Zhen-Dong Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Light emitting diode
    Patent number: 8809886
    Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, and a second optical symmetric layer stacked with other in the listed sequence. The light emitting diode further includes a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. A refractive difference between the second optical symmetric layer and the substrate is less than or equal to 0.1.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 19, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Hao-Su Zhang, Jun Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Semiconductor structure
    Patent number: 8803176
    Abstract: A semiconductor structure includes a first semiconductor layer, a active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer stacked in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 12, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Hao-Su Zhang, Jun Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Light emitting diode
    Patent number: 8803178
    Abstract: A light emitting diode includes a substrate, a source layer, a metallic plasma generating layer, a first optical symmetric layer, a second optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked on a surface of the substrate in series. The first electrode is electrically connected with the first semiconductor layer. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the substrate. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the substrate. The second optical symmetric layer is disposed on a surface of the first optical symmetric layer away from the substrate.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 12, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Jun Zhu, Hao-Su Zhang, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Method for making light emitting diode
    Patent number: 8802466
    Abstract: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer are then disposed on a surface of the second semiconductor layer away from the substrate in the listed sequence. The substrate and the buffer layer are removed to expose the first semiconductor layer. A first electrode is applied on an exposed surface of the first semiconductor layer and a second electrode is applied to electrically connect with the second semiconductor layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 12, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Hao-Su Zhang, Jun Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Light emitting diode
    Patent number: 8803177
    Abstract: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, a first electrode, and a second electrode. The first semiconductor layer includes a first surface and a second surface opposite to the first surface. The active layer, the second semiconductor layer, the third optical symmetric layer, the metallic layer, the fourth optical symmetric layer, and the first optical symmetric layer are stacked on the second surface in sequence. The first electrode covers and contacts the first surface. The second electrode is electrically connected with the second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 12, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Hao-Su Zhang, Jun Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • COMB PLATE-COMB PLATE CARRIER ASSEMBLY AND COMBINATION CONSTRUCTION OF THE ASSEMBLY WITH LIFTING TOOL
    Publication number: 20140202827
    Abstract: A comb plate-comb plate carrier assembly for an escalator is disposed on an upper and lower head and mounted to the truss of the escalator. A comb plate and a pair of comb plate carriers for carrying the comb plate are included. The assembly is provided with at least one of: a guide rail bracket fastened to the comb plate carrier and used to fix a guide rail for the handrail belt; a supporting bracket fastened to the comb plate carrier and used to support an end of a handrail return-sheave curve fastened to the truss; a comb plate height adjuster; a monitoring device for monitoring the horizontal displacement and upward displacement of the comb plate. A combination structure includes a lifting tool and the assembly in an assembled condition, the lifting tool includes a traverse rod and a longitudinal suspending member.
    Type: Application
    Filed: January 17, 2014
    Publication date: July 24, 2014
    Applicant: KONE Corporation
    Inventor: Kevin FAN JIN QUAN
  • Method for making light emitting diode
    Patent number: 8772063
    Abstract: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in the listed sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, a first optical symmetric layer, and a second optical symmetric layer are then disposed on a surface of the second semiconductor layer away from the substrate in the listed sequence. A first electrode is applied to electrically connect with the first semiconductor layer and a second electrode is applied to electrically connect with the second semiconductor layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: July 8, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Hao-Su Zhang, Jun Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
  • Alpha-arylmethoxyacrylate derivative, preparation method thereof, and pharmaceutical composition containing same
    Patent number: 8772290
    Abstract: The present invention relates to an alpha-arylmethoxyacrylate derivative, a preparation method thereof and a pharmaceutical composition comprising the same, and the alpha-arylmethoxyacrylate derivative is inhibitory of HIF, which plays an important role in the regulation of genes associated with energy metabolism, vasomotion, angiogenesis and apoptosis and in the response of cells under hypoxic conditions, so that it can be used for preventing or treating of diseases such as cancer, arthritis, psoriasis, diabetic retinopathy and macular degeneration.
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: July 8, 2014
    Assignee: Oscotech Inc.
    Inventors: Se-Won Kim, Jung Ho Kim, Se-Nyum Kim, Dae-Pil Kang, Youn Ho Han, Guo Fan Jin, Dong-Sik Jung, Sung-Ho Park, Ji Min Kim, Jhi Zheng
  • LASER
    Publication number: 20140177667
    Abstract: A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a body, a metal film, and at least one microstructure. The at least one microstructure has a height and a lateral size, and both the height and the lateral size are in a range from about 0.5? to about 2?, while ? is a working wavelength of the laser.
    Type: Application
    Filed: December 20, 2013
    Publication date: June 26, 2014
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., Tsinghua University
    Inventors: JUN ZHU, JING-LEI ZHU, QUN-QING LI, KAI-LI JIANG, CHEN FENG, GUO-FAN JIN, SHOU-SHAN FAN
  • LASER
    Publication number: 20140177665
    Abstract: A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a body, a metal film, and at least one microstructure. The at least one microstructure is concaved from a first reflective surface of the total reflective mirror. The at least one microstructure has a depth and a lateral size, and both the depth and the lateral size are in a range from about 0.5? to about 2?, while ? is a working wavelength of the laser.
    Type: Application
    Filed: December 20, 2013
    Publication date: June 26, 2014
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: JUN ZHU, JING-LEI ZHU, QUN-QING LI, KAI-LI JIANG, CHEN FENG, GUO-FAN JIN, SHOU-SHAN FAN
  • LASER
    Publication number: 20140177666
    Abstract: A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a microstructure. The microstructure is convex ring-shaped structure. The convex ring-shaped structure has a height and a width, and both the height and the width are in a range from about 0.5? to about 2?, while ? is a working wavelength of the laser.
    Type: Application
    Filed: December 20, 2013
    Publication date: June 26, 2014
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., Tsinghua University
    Inventors: JUN ZHU, JING-LEI ZHU, QUN-QING LI, KAI-LI JIANG, CHEN FENG, GUO-FAN JIN, SHOU-SHAN FAN
  • OFF-AXIAL THREE-MIRROR SYSTEM
    Publication number: 20140124649
    Abstract: An off-axial three-mirror system includes a primary mirror, a secondary mirror, a tertiary mirror, and an image sensor. The secondary mirror is located on a reflective optical path of the primary mirror. The tertiary mirror is located on a reflective optical path of the secondary mirror. The image sensor is located on a reflecting optical path of the tertiary mirror. The primary mirror and the tertiary mirror are formed as one piece. The surface type of both the primary mirror and the tertiary mirror is a freeform surface. The primary mirror is a convex mirror, and the tertiary mirror is a concave mirror.
    Type: Application
    Filed: December 12, 2012
    Publication date: May 8, 2014
    Inventors: WEI HOU, JUN ZHU, GUO-FAN JIN, SHOU-SHAN FAN
  • OFF-AXIAL THREE-MIRROR SYSTEM
    Publication number: 20140124657
    Abstract: An off-axial three-mirror system includes a primary mirror, a secondary mirror, a tertiary mirror, and an image sensor. The secondary mirror is located on a reflective optical path of the primary mirror. The tertiary mirror is located on a reflective optical path of the secondary mirror. The image sensor is located on a reflecting optical path of the tertiary mirror. The primary mirror and the tertiary mirror are formed as one piece. The surface type of both the primary mirror and the tertiary mirror is a freeform surface.
    Type: Application
    Filed: December 12, 2012
    Publication date: May 8, 2014
    Inventors: JUN ZHU, WEI HOU, GUO-FAN JIN, SHOU-SHAN FAN
  • Apparatus and Methods for Preventing Information Disclosure
    Publication number: 20140094141
    Abstract: The present application is directed to apparatuses and methods for preventing information disclosure. According to example embodiments of the present application, after a mobile terminal of a user is lost, a first short message may be sent to the mobile terminal through a short message network. When the mobile terminal determines that the received short message is the first short message, user information stored in the mobile terminal may be erased by the mobile terminal.
    Type: Application
    Filed: July 30, 2013
    Publication date: April 3, 2014
    Applicant: BEIJING XIAOMI Technology CO., LTD.
    Inventors: Yuzhen Wan, Peng Sun, Fan Jin, Junqi Lin