Abstract: A wide-band gap semiconductor device and a method of manufacturing the same are provided. The wide-band gap semiconductor device of the disclosure includes a substrate, an epitaxial layer, an array of merged PN junction Schottky (MPS) diode, and an edge termination area surrounding the array of MPS diode. The epitaxial layer includes a first plane, a second plane, and trenches between the first plane and the second plane. The array of MPS diode is formed in the first plane of the epitaxial layer. The edge termination area includes a floating ring region having floating rings formed in the second plane of the epitaxial layer, and a transition region between the floating ring region and the array of MPS diode. The transition region includes a PIN diode formed in the plurality of trenches and on the epitaxial layer between the trenches.

Abstract: An optical module is disclosed. The optical module includes a carrier, an optical emitter disposed over the carrier, and a monitor disposed over the carrier and configured to adjust a property of a first light emitted from the optical emitter.

Abstract: Methods and apparatus are provided for UE-triggered handover and early preparation with coexistence of the network-triggered handover. In one novel aspect, the UE is configured early measurement report configuration, receives an early handover command from the serving base station with a handover candidate cell list, monitors handover triggering conditions for each candidate cell on the handover candidate cell list based on a UE-triggered handover configuration and performs the UE-triggered handover to a candidate cell when the corresponding triggering condition is met for the candidate cell. In one embodiment, the UE receives a network-triggered handover command to a target cell, suspends the UE-triggered handover configuration and performs the network-triggered handover to the target cell. The UE discards the UE-triggered handover configuration upon success of the network-triggered handover and resumes the UE-triggered handover configuration upon failure of the network-triggered handover.

Abstract: A power supply system with current sharing includes a current sharing bus, a plurality of power supply units, and a plurality of controllers. The power supply units are connected to each other through the current sharing bus. Each power supply unit provides a current sharing signal value to the current sharing bus, and provides an output current to a load. Each controller receives current sharing signal values provided from other power supply units and current signal values corresponding to the output currents. When determining that the current signal value is less than a reference current sharing signal value, the controller increases an output voltage of the power supply unit to increase the output current. Otherwise, the controller decreases the output voltage to decrease the output current so that so that the output currents of the power supply units are shared to supply power to the load.

Abstract: A merged PiN Schottky (MPS) diode includes a substrate, a first epitaxial layer of a first conductivity type, doped regions of a second conductivity type, a second epitaxial layer of the first conductivity type, and a Schottky metal layer. The first epitaxial layer is disposed on the first surface of the substrate. The doped regions are disposed in a surface of the first epitaxial layer, wherein the doped regions consist of first portions and second portions, the first portions are electrically floating, and the second portions are electrically connected to a top metal. The second epitaxial layer is disposed on the surface of the first epitaxial layer, wherein trenches are formed in the second epitaxial layer to expose the second portions of the doped regions. The Schottky metal layer is conformally deposited on the second epitaxial layer and the exposed second portions of the doped regions.

Abstract: A wide-band gap semiconductor device and a method of manufacturing the same are provided. The wide-band gap semiconductor device of the disclosure includes a substrate, an epitaxial layer, an array of merged PN junction Schottky (MPS) diode, and an edge termination area surrounding the array of MPS diode. The epitaxial layer includes a first plane, a second plane, and trenches between the first plane and the second plane. The array of MPS diode is formed in the first plane of the epitaxial layer. The edge termination area includes a floating ring region having floating rings formed in the second plane of the epitaxial layer, and a transition region between the floating ring region and the array of MPS diode. The transition region includes a PIN diode formed in the plurality of trenches and on the epitaxial layer between the trenches.

Abstract: An electronic device and a temperature detection device thereof are provided. The temperature detection device includes a differential stage circuit and an output stage circuit. The differential stage circuit includes a first differential end and a second differential end, and includes a cross-coupled transistor element, a first resistor and a second transistor. The cross-coupled transistor element receives a first voltage. The first resistor is coupled between the first differential end and a second voltage, and the first resistor is poly-silicon resistor. The second resistor is coupled between the second differential end and the second voltage, and the second resistor is a silicon carbide diffusion resistor. The output stage circuit generates a driving voltage according to a first control voltage on the first differential end and a second control voltage on the second differential end.

Abstract: Examples pertaining to secure transmission in mobile communications are described. A UE receives an RRC reconfiguration message from a master network node. The RRC reconfiguration message comprises information regarding candidate cells and predefined reconfigurations, and each candidate cell is associated with one predefined reconfiguration. The UE evaluates a triggering condition for at least one candidate cell to determine whether to trigger a conditional cell change procedure and performs the conditional cell change procedure to switch a PSCell associated with the apparatus to a target cell in an event that the triggering condition for the target cell is met. The UE derives a security key according to a counter value and a key of the master network node. The counter value is obtained from a sequence of distinct counter values of the target cell or of a target secondary node stored by the processor or is generated by the processor.

Abstract: A driving voltage generating device includes a temperature detector, a controlling circuitry, a voltage generator, and an output stage circuitry. The temperature detector is coupled to a control terminal of a power transistor and is configured to generate temperature detection information by detecting an ambient temperature. The controlling circuitry is coupled to the temperature detector and generates an activation signal by determining whether the ambient temperature is abnormal according to the temperature detection information. The voltage generator generates an operation power according to the activation signal. The output stage circuitry is coupled to the voltage generator, generates a driving voltage according to the operation power, and provides the driving voltage to the control terminal of the power transistor.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. In certain configurations, the UE enters a first radio resource control (RRC) connection with a first base station of a first network. The UE receives, from the first base station, an indication that enables the UE to send a first request for deactivating or releasing resources used for communications with the first base station. In response to a determination to enter a second RRC connection with a second base station of a second network, the UE sends, to the first base station, the first request for deactivating or releasing the resources. The UE enters the second RRC connection with the second base station while maintaining the first RRC connection with the first base station.

Abstract: A temperature sensing device includes a resistor string and a control circuitry. The resistor string includes a variable resistor, a first resistor, and a second resistor which are coupled in series with each other. The resistor string is coupled between a sensing end and a reference ground voltage. The first resistor and the second resistor are coupled to a monitoring end to provide a monitoring voltage. The control circuitry compares the monitoring voltage with a plurality of reference voltages to generate sensing temperature information, and generate adjustment information according to the sensing temperature information. The control circuitry adjusts a resistance provided by the variable resistor according to the adjustment information. The first resistor is a polysilicon resistor, and the second resistor is a silicon carbide diffusion resistor.

Abstract: An electronic device and a temperature detection device thereof are provided. The temperature detection device includes a first resistor, a second resistor, and an operation circuit. The first resistor and the second resistor are coupled in series between a detection end and a first voltage. The first resistor and the second resistor divide a detection voltage on the detection end to generate a monitoring voltage. The operation circuit compares the monitoring voltage with a plurality of reference voltages to generate a plurality of comparison results. The operation circuit performs an operation on the comparison results to generate detection temperature information. The first resistor is a poly-silicon resistor and the second resistor is a silicon carbon (SiC) diffusion resistor.

Abstract: A package structure includes a first RDL, an adhesive layer and a first electronic component. Upper bumps and conductive pads are provided on a first upper surface and a first lower surface of the first RDL, respectively. The adhesive layer is located on the first upper surface of the first RDL and surrounds the upper bumps. The first electronic component is mounted on the adhesive layer and includes conductors which are visible from an active surface of the first electronic component and joined to the upper bumps, the active surface of the first electronic component faces toward the first upper surface of the first RDL. Two adhesive surfaces of the adhesive layer are adhered to the first upper surface of the first RDL and the active surface of the first electronic component, respectively.

Abstract: An optical module is disclosed. The optical module includes a carrier, an optical emitter disposed over the carrier, and a monitor disposed over the carrier and configured to adjust a property of a first light emitted from the optical emitter.

Abstract: A compound comprising a first ligand LA of Formula I, is provided. In Formula I, moiety A is a 5-membered or 6-membered ring; moiety B is a fused ring structure comprising at least four rings; K is a direct bond, O, or S; each of Z1 and Z2 is independently C or N; each RA and RB is independently hydrogen or a General Substituent; at least one RB comprises a cyclic group or an electron-withdrawing group; LA is coordinated to a metal M that has an atomic mass of at least 40 and is optionally coordinated to other ligands; and the ligand LA is optionally linked with other ligands. Formulations, OLEDs, and consumer products including the compound are also provided.

Abstract: A compound comprising a bidentate ligand LA, comprising a moiety W is disclosed. W is a cyclic structure including three or more aromatic moieties joined to each other by direct bonds, wherein W can be substituted. Ligand LA is coordinated to a metal M, and can be joined with other ligands to form a tridentate, tetradentate, pentadentate, or hexadentate ligand. The compound does not form part of an interlocked compound. Formulations, OLEDs, and consumer products containing the compound are also provided.

Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.

Abstract: A method of L1/L2-based mobility with signaling optimization using base (reference) configuration and replaceable (delta) configuration for candidate cells is proposed. All candidates can be configured at different levels provided by Radio Resource Control (RRC) signaling. To support L1/L2-triggered mobility (LTM), there is a common base configuration for candidates, and the candidates are modelled as replaceable configurations which are delta configurations on top of the common base configuration (instead of UE's current RRC configuration). The common and replaceable configurations are also referred to as reference configuration and candidate delta configuration. The candidate delta configuration is applied on top of the reference configuration to form a complete candidate configuration for handover.

Abstract: A wearable air purifier includes at least one wearable component, a control unit, at least one speaker assembly and at least one negative ion generating component. The control unit is disposed inside the at least one wearable component. The at least one speaker assembly is disposed on the at least one wearable component and electrically connected to the control unit. The at least one negative ion generating component is disposed on the at least one wearable component and electrically connected to the control unit. The control unit provides high-voltage currents to the at least one negative ion generating component to enable the at least one negative ion generating component to emit negative ions by corona discharging, and the control unit further provides audio signals to the at least one speaker assembly to activate the at least one speaker assembly to generate sound.