Abstract: A method for correcting a mask pattern includes: providing an original mask pattern including at least one dense pattern area and at least one isolated pattern area, and the original mask pattern being divided into a first pattern and a second pattern, wherein the first pattern is formed in the isolated pattern area and extends to the dense pattern area, and the second pattern is formed in the dense pattern area; forming at least one slot on at least one section of the first pattern, and the at least one section of the first pattern is located on at least one transition area between the at least one isolated pattern area and the at least one dense pattern area; and performing an optical proximity correction operation on the first pattern formed with at least one slot and the second pattern. Using the corrected mask pattern may avoid the occurrence of necking or breaking on portion of the post-transfer pattern.

Abstract: A method for correcting a mask pattern includes: providing an original mask pattern including at least one dense pattern area and at least one isolated pattern area, and the original mask pattern being divided into a first pattern and a second pattern, wherein the first pattern is formed in the isolated pattern area and extends to the dense pattern area, and the second pattern is formed in the dense pattern area; forming at least one slot on at least one section of the first pattern, and the at least one section of the first pattern is located on at least one transition area between the at least one isolated pattern area and the at least one dense pattern area; and performing an optical proximity correction operation on the first pattern formed with at least one slot and the second pattern. Using the corrected mask pattern may avoid the occurrence of necking or breaking on portion of the post-transfer pattern.

Abstract: The present invention provides an alignment mark, the alignment mark includes at least one dummy mark pattern in a first layer comprises a plurality of dummy mark units arranged along a first direction, and at least one first mark pattern located in a second layer disposed above the first layer, the first mark pattern comprises a plurality of first mark units, each of the first mark units being arranged in a first direction. When viewed in a top view, the first mark pattern completely covers the dummy mark pattern, and the size of each dummy mark unit is smaller than each first mark unit. In addition, each dummy mark unit of the dummy mark pattern has a first width, each first mark unit of the first mark pattern has a second width, and the first width is smaller than half of the second width.

Abstract: The present invention provides an alignment mark, the alignment mark includes at least one dummy mark pattern in a first layer comprises a plurality of dummy mark units arranged along a first direction, and at least one first mark pattern located in a second layer disposed above the first layer, the first mark pattern comprises a plurality of first mark units, each of the first mark units being arranged in a first direction. When viewed in a top view, the first mark pattern completely covers the dummy mark pattern, and the size of each dummy mark unit is smaller than each first mark unit. In addition, each dummy mark unit of the dummy mark pattern has a first width, each first mark unit of the first mark pattern has a second width, and the first width is smaller than half of the second width.