Abstract: Novel methods for improving the within-wafer uniformity of a gate oxide layer on a semiconductor wafer substrate. According to a first embodiment, a gate oxide layer is formed on a wafer using conventional oxidation parameters and equipment. Next, the edge-thick gate oxide layer is nitridated using a center-thick plasma nitridation profile to enhance uniformity in thickness of the gate oxide layer between the center region and the edge or peripheral regions of the wafer. According to a second embodiment, the wafer substrate is first nitridated and then oxidized to form the gate oxide layer. The nitrogen incorporated into the wafer surface during the nitridation step retards oxidation of the wafer at the wafer edge to enhance uniformity in thickness of the gate oxide layer between the center region and the edge or peripheral regions of the wafer.

Abstract: Methods and vectors (both DNA and retroviral) are provided for the construction of a Library of mutated cells. The Library will preferably contain mutations in essentially all genes present in the genome of the cells. The nature of the Library and the vectors allow for methods of screening for mutations in specific genes, and for gathering nucleotide sequence data from each mutated gene to provide a database of tagged gene sequences. Such a database provides a means to access the individual mutant cell clones contained in the Library. The invention includes the described Library, methods of making the same, and vectors used to construct the Library. Methods are also provided for accessing individual parts of the Library either by sequence or by pooling and screening. The invention also provides for the generation of non-human transgenic animals which are mutant for specific genes as isolated and generated from the cells of the Library.

Abstract: The present invention makes use of an opening of a latch cover opening to engage the first loose leaf with the second loose leaf at a pivotal opening with a diameter smaller than the opening of the latch cover of the first loose leaf, and the latch cover of the first loose leaf is located between the two axle covers of the second loose leaf after they are coupled. Therefore, the two will not be separated from each other in the front-rear direction easily, so that the first and second loose leaves can be removed and assembled, and fixed securely after the assembling.

Abstract: In the present invention, an edge is extended from the rim of a circular disc of a wheel cover, and such edge is the portion that the circular disc of the wheel cover exceeds the rim of the steel wheel, having an appropriated width to sufficiently block the thickness of the tire and make the tire look thinner.

Abstract: In the present invention, a first set of latch members and a second set of latch members are disposed on a wheel cover; wherein the first set of latch members encloses a first circular area with a first diameter D, the second set of latch members encloses a second circular area with a second diameter d, and the first diameter D is larger than the second diameter d, such that the wheel cover uses different sets of latch members to enclose areas of different diameters and fits the installation of different sized wheels.

Abstract: The present invention comprises a footrest with a poking rod; a bumper with an embedding hole is formed on the footrest; a latch member having two bent latch plates, each latch plate having a latch groove with a corresponding concave neck disposed inwardly, and a corresponding concave latch fork inwardly disposed, a latch wing outwardly disposed is formed on the latch groove; a corresponding outwardly protruded extension section is defined under the latch groove; such that the poking rod is clipped by the two plates of the latch member, and engaged by the latch fork. The footrest with the latch member and the poking rod are fully embedded and inserted into the embedding hole on the base of the bumper and secured into a fixed position.

Abstract: A chemical vapor deposition (CVD) method for forming a microelectronic layer within a microelectronic product employs a wetting material treatment of a substrate upon which is formed the microelectronic layer. The wetting material treatment provides for an attenuated incubation or induction time when forming the microelectronic layer, particularly within the context of a digital CVD method, such as an atomic layer CVD method. The microelectronic layer is thus formed with enhanced manufacturability.

Abstract: An alert device, which is adapted for mounting to a valve of a pneumatic object, is capable of detecting any decrease in the interior pneumatic pressure of the pneumatic object and generating a warning signal immediately therefor. The alert device includes a signal arrangement and a connector, wherein the signal arrangement includes a cap, a signal generator fittingly received in the cap, and a power supply arrangement comprising a first contact unit and a second contact unit, and the connector comprises a power inlet and a power outlet.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: An integrated color filter and fabricating method thereof, featuring a transparent organic layer formed under or above a color filter, before or after the fabrication process of the color filter. The transparent organic layer has higher transparency and lower dielectric constant than the color filter. By combining the transparent organic layer and the color filter, the parasitic capacitance is reduced without sacrificing light transmission.

Abstract: This invention relates to a device for removing and transporting articles, such as ophthalmic lens mold sections, or packaging elements from a mold. The invention, in one embodiment includes first, second, and third assemblies; the first of which removes the articles from the molding station at a first location and transports them to a second location; the second assembly receives the articles from the first assembly and transports them to a third location, and the third assembly receives the articles from the second assembly and transports them to a fourth location. A second embodiment includes a flipper assembly disposed between the first and second assemblies, which flipper receives the articles from the first assembly and inverts them before depositing them onto the second assembly. This second embodiment is useful in conjunction with molded articles which are transported to the flipper assembly in an inverted position.

Abstract: A method of utilizing color photoresist to form black matrix and spacers on a control circuit substrate is described. Utilizing the character of the red and the blue photoresist having a non-overlapping transmittance region in the visible light region, a black matrixes consisting of overlapping red and blue photoresist on control devices are used to prevent the photo current occurring in the off state of the control devices. In addition, three different color photoresist plus another-color photoresist are overlapped to form spacers on metal lines.

Abstract: A chemical mechanical polishing (CMP) apparatus with temperature control. The apparatus controls circular zone temperature of the wafer. The CMP apparatus comprises a platen; a carrier holding a wafer against the platen; a guide ring disposed at the rim of the carrier to mount the wafer on the carrier; and a heater disposed in the guide ring, in the carrier, or used to heat the slurry. The temperature of the heater is set between 20° C. and 60° C. Thus, the polishing rate at the edge is improved, and the polishing difference between the edge and the center of the wafer is reduced.

Abstract: A method for manufacturing a seamless wheel rim includes the steps: firstly, to deeply draw a pre-cut circular aluminum alloy plate into a cup-shaped embryo body, punch out the bottom surface thereof to form a hollow cylinder, then put it into an expanding-pressing female die with an expanding die cavity at both ends thereof respectively, and finally press and expand the both ends of the embryo body by two sets of expanding-pressing male dies to form a seamless aluminum wheel rim in sequence.

Abstract: A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist is composed of a layer of black resin and a layer of transparent photoresist. The black resin, of which optical density is greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.

Abstract: A covert, gamma-ray “signature” is used as a “watermark” for property identification. This new watermarking technology is based on a unique steganographic or “hidden writing” digital signature, implemented in tiny quantities of gamma-ray-emitting radioisotopic material combinations, generally covertly emplaced on or within an object. This digital signature may be readily recovered at distant future times, by placing a sensitive, high energy-resolution gamma-ray detecting instrument reasonably precisely over the location of the watermark, which location may be known only to the object's owner; however, the signature is concealed from all ordinary detection means because its exceedingly low level of activity is obscured by the natural radiation background (including the gamma radiation naturally emanating from the object itself, from cosmic radiation and material surroundings, from human bodies, etc.).

Abstract: A method of utilizing color photoresist to form black matrix and spacers on a control circuit substrate is described. Utilizing the character of the red and the blue photoresist having a non-overlapping transmittance region in the visible light region, a black matrixes consisting of overlapping red and blue photoresist on control devices are used to prevent the photo current occurring in the off state of the control devices. In addition, three different color photoresist plus another color photoresist are overlapped to form spacers on metal lines.

Abstract: Compounds and compositions for the delivery of active agents are provided. Methods of administration and preparation are provided as well.

Abstract: A CMOS device structure, and a method of fabricating the CMOS device, featuring a gate insulator layer comprised of a high k metal oxide layer, has been developed. The process features formation of recessed, heavily doped source/drain regions, and of vertical, polysilicon LDD spacers, prior to deposition of the high k metal oxide layer. Removal of a silicon nitride shape, previously used as a mask for definition of the recessed regions, which in turn are used for accommodation of the heavily doped source/drain regions, provides the space to be occupied by the high k metal oxide layer. The integrity of the high k, gate insulator layer, butted by the vertical polysilicon spacers, and overlying a channel region provided by the non-recessed portion of the semiconductor substrate, is preserved via delayed deposition of the metal oxide layer, performed after high temperature anneals such as the activation anneal for heavily doped source/drain regions, as well as the anneal used for metal silicide formation.