Abstract: The present disclosure relates to nanoparticle compositions for modifying antigen-specific T cells and uses thereof.

Abstract: A method for determining material-cage stacking, a computer device, and a storage medium are provided. The method includes the following. A material-cage image is obtained by photographing a first stacking apparatus of a first material cage and a second stacking apparatus of a second material cage. The stacking apparatuses of the two material cages in the material-cage image can be recognized respectively with two detection models. The first stacking result is obtained by obtaining location information of the stacking apparatuses of the two material cages with the first detection model, and the second stacking result is obtained with the second detection model.

Abstract: A micro light emitting diode (LED) structure includes a mesa structure. The mesa structure further includes a first semiconductor layer, a light emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light emitting layer, a sidewall protective layer formed on the sidewalls of the mesa structures, and a sidewall reflective layer formed on the surface of the sidewall protective layer. A top surface area of the second semiconductor layer is greater than each of: a bottom surface area of the first semiconductor layer, a top surface area of the first semiconductor layer, and a bottom surface area of the second semiconductor layer.

Abstract: Certain aspects of the present disclosure provide a technique for wireless communications by a user equipment (UE). The UE receives signaling indicating a time gap to be applied between at least two physical uplink shared channels (PUSCHs) scheduled, via a single downlink control information (DCI), for transmission to different transmission reception points (TRPs). The UE transmits the at least two PUSCHs to the TRPs, in accordance with the time gap.

Abstract: A bonding structure and an acoustic wave device relate to the field of filters. The bonding structure includes a supporting substrate and a piezoelectric layer formed on the supporting substrate. The supporting substrate is made of a polycrystalline material, and a porosity of the supporting substrate is less than 0.0045% or greater than 0.6%. The bonding structure can effectively improve the generation of interference of spurious emission and improve the performance of the device.

Abstract: The present application provides a tunable phase shifter and an electronic device, which relates to the technical field of microwave radio frequency. The tunable phase shifter includes: a first substrate and a second substrate; and a regulatable dielectric layer. The first electrode layer includes a reference electrode. The second electrode layer includes a first transmission line and a second transmission line, the first transmission line is provided with a first branch, the second transmission line is provided with a second branch, and the orthographic projections on the first substrate of the first branch and the second branch and the orthographic projection of the reference electrode on the first substrate at least partially overlap. The tunable phase shifter according to the present application forms an electric field by using the first branch, the second branch and the reference electrode, which can realize the function of phase shifting.

Abstract: A liquid dispenser has a liquid reservoir for storing liquid prior to discharge and a nozzle unit through which liquid is discharged in a discharge direction. The liquid dispenser also has an actuating handle actuable in a direction that deviates from the discharge direction in order to convey liquid from the liquid reservoir to the nozzle unit. The liquid dispenser has an inner housing to which the actuating handle is pivotably articulated, and an outer housing displaceable in a translational manner relative to the inner housing between a first end position and a second end position. The actuating handle and the outer housing have cooperating locking positions which prevent actuation of the actuating handle in the first end position and which allow actuation of the actuating handle in the second end position.

Abstract: The present disclosure relates to the technical field of pest capturing in protection of tea trees, in particular to a pest trap for tea planting. The pest trap includes a trap framework and a light-emitting diode (LED) lamp; an upper end of the trap framework is provided with a support which is used for clamping the LED lamp; a board for trapping pests coated with sex pheromone on a surface is arranged inside the trap framework; a heating source is arranged on one side of the board for trapping pests and is used for making the sex pheromone to be volatilized faster and farther; a mesh enclosure used for trapping pests is arranged on an outer side of the trap framework; and a small circular hole is formed in a bottom of the mesh enclosure.

Abstract: A semiconductor arrangement is provided and includes a gate electrode. The gate electrode includes a first portion over a first interface between an active region and an isolation structure and a second portion over the active region. The first portion has a first material composition. The second portion has a second material composition different than the first material composition.

Abstract: A manufacturing method of a package-on-package structure includes forming a first package structure and staking a second package structure over the first package structure. The first package structure is formed by at least the following steps. A first redistribution structure is provided. Conductive structures are formed on the first redistribution structure. A die is placed between the conductive structures. The die and the conductive structures are encapsulated by an encapsulant. The encapsulant is planarized such that an entirety of a top surface of the encapsulant is coplanar with an entirety of top surfaces of the conductive structures. A second redistribution structure is formed on the encapsulant. The second redistribution structure includes a conductive pattern layer that is in physical contact with the top surfaces of the encapsulant and the conductive structures. An entire bottom surface of the conductive pattern layer is located at a same level height.

Abstract: A micro light emitting diode (LED) structure, includes a mesa structure. The mesa structure further includes a first semiconductor layer having a first conductive type, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer, the second semiconductor layer having a second conductive type different from the first conductive type. The second semiconductor layer further includes a semiconductor region and an ion implantation region formed around the semiconductor region, the ion implantation region having a resistance higher than a resistance of the semiconductor region.

Abstract: An overmolded coil assembly is provided and includes a body having a generally hollow cylindrical shape and including a central aperture and an inner surface defining a recess. A spool is received in the recess of the body. The spool includes an annular barrel and has opposite first and second ends. The first end is adjacent the central aperture of the body. A coil of electrically conductive wire is disposed in and circumferentially surrounds the annular barrel of the spool. A washer having inner and outer surfaces is adjacent the second end of the spool. An overmold made of an electrically insulative material covers the spool, the coil, the washer, and the body to seal around the spool, the coil, the washer, and the body. A fuel pump including the overmolded coil assembly and a method of sealing a coil assembly are also provided.

Abstract: An image processing device includes one or more storage devices; and one or more processors configured to create a first image by inputting a first latent variable into a first generative model; store the first latent variable in the one or more storage devices in association with identification information of the first generative model; acquire the first latent variable and the identification information of the first generative model associated with the first latent variable; generate a second latent variable based on the first latent variable; create a second image by inputting the second latent variable into the first generative model; and store the second latent variable in the one or more storage devices in association with the identification information of the first generative model. The second image is different from the first image and includes at least a second object different from a first object included in the first image.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

Abstract: A hinge assembly of a box device includes a first sliding rail and a second sliding rail. The first sliding rail extends in a straight line, and the second sliding rail extends along an ellipse. When a door body blocks an opening, the first sliding rail is perpendicular to a plane where the opening is located, and the portion of the second sliding rail that is away from a box body is close to a pivoting side with respect to the first sliding rail, and the door body moves towards a target side of the box body during opening of the door body, with respect to the box body, from a state of blocking the opening, to reduce the extent to which the door body exceeds an outer sidewall of the box body.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof and a display device. The display substrate includes a base substrate, a plurality of groups of scanning lines extending along a first direction and arranged along a second direction, and a reference signal line extending along the second direction at an end of each scanning line, and an orthogonal projection of the reference signal line onto the base substrate does not overlap with an orthogonal projection of each scanning line onto the base substrate. The scanning lines include a target scanning line for discharging static electricity and including an electrostatic discharge end arranged at a side of the target scanning line close to the reference signal line, the display substrate further includes an electrostatic discharge structure electrically coupled to the electrostatic discharge end and an electrostatic ring and arranged between the electrostatic discharge end and the reference signal line.

Abstract: A central control device identifies an identity of a user, and determines, based on the identity of the user, a smart home linkage solution associated with the identity of the user. Then, the central control device controls, based on the smart home linkage solution associated with the identity of the user, a public smart home device to enter a corresponding operating mode. When receiving a first operation of the user, the central control device controls, based on the smart home linkage solution associated with the identity of the user, the public smart home device to enter the corresponding operating mode.

Abstract: A micro light emitting diode (LED) structure, includes a mesa structure. The mesa structure further includes a first semiconductor layer having a first conductive type, a light emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light emitting layer, the second semiconductor layer having a second conductive type different from the first conductive type. The second semiconductor layer further includes a semiconductor region and an ion implantation region formed around the semiconductor region, the ion implantation region having a resistance higher than a resistance of the semiconductor region.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include first and second sacrificial layers. The method can further include forming a recess structure in a first portion of the fin structure, selectively etching the first sacrificial layer of a second portion of the fin structure over the second sacrificial layer of the second portion of the fin structure, and forming an inner spacer layer over the etched first sacrificial layer with the second sacrificial layer of the second portion of the fin structure being exposed.

Abstract: An interconnection structure includes a first dielectric layer, a first conductive layer disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a second conductive layer disposed in the second dielectric layer in electrical contact with the first conductive layer, a third dielectric layer formed over the second dielectric layer, wherein the third dielectric layer comprises silicon carbon-nitride (SiCN) based material, and a resistor device disposed in the third dielectric layer.