Abstract: A method of fabricating a thin-film transistor on an insulation substrate. A gate and a gate line are formed on the insulation substrate. A gate dielectric layer, a silicon layer, a doped silicon layer and a conductive layer are formed over the insulation substrate. The conductive layer and the doped silicon layer are patterned to form a source/drain line, while the conductive layer and the doped silicon layer on the gate remain. A transparent conductive layer is formed over the insulation substrate. The transparent conductive layer, the conductive layer and the doped silicon layer are patterned to respectively form a pixel electrode, a source/drain conductive layer and a source/drain region. A protection layer is then formed over the insulation layer. The protection layer is patterned to expose the pixel electrode. The method of fabricating the thin-film transistor can be applied to fabrication of fax machine, CIS such as scanner and various electronic devices.