Patents by Inventor Fang-Chi Chien
Fang-Chi Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11764042Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.Type: GrantFiled: March 22, 2022Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Min Lin, Fang-Chi Chien, Cheng-Yi Huang, Chao-Po Lu
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Publication number: 20220216040Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.Type: ApplicationFiled: March 22, 2022Publication date: July 7, 2022Inventors: Tsung-Min LIN, Fang-Chi Chien, Cheng-Yi Huang, Chao-Po Lu
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Patent number: 11289311Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.Type: GrantFiled: September 30, 2019Date of Patent: March 29, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Min Lin, Fang-Chi Chien, Cheng-Yi Huang, Chao-Po Lu
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Publication number: 20220037115Abstract: An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.Type: ApplicationFiled: July 31, 2020Publication date: February 3, 2022Inventors: Tsung-Min LIN, Sheng-Chi LIN, Jui-Feng JAO, Fang-Chi CHIEN, Lung-Yin TANG
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Patent number: 10937674Abstract: A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate by the transfer head such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.Type: GrantFiled: April 23, 2019Date of Patent: March 2, 2021Assignee: MIKRO MESA TECHNOLOGY CO., LTD.Inventors: Li-Yi Chen, Fang-Chi Chien
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Patent number: 10930528Abstract: A method for transferring a micro device includes: preparing a carrier substrate with the micro device thereon in which an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head comprising a force-adjustable glue layer thereon; forming a liquid layer on a receiving substrate; reducing the grip force of the force-adjustable glue layer of the transfer head to be smaller than a force attaching the micro device to the receiving substrate; placing the micro device over the receiving substrate such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.Type: GrantFiled: April 23, 2019Date of Patent: February 23, 2021Assignee: MIKRO MESA TECHNOLOGY CO., LTD.Inventors: Shyh-Feng Chen, Li-Yi Chen, Fang-Chi Chien
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Patent number: 10661408Abstract: A stopper includes a head portion sized and configured to be coupled to an upper platen of a chemical-mechanical planarization system and a stopper leg sized and configured to direct a flow of liquid slurry applied to an upper planar surface of the upper platen substantially away from a lower surface of the upper platen.Type: GrantFiled: January 29, 2018Date of Patent: May 26, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Feng Han, Cheng-Yi Huang, Fang-Chi Chien, Chen-shih Chung, Sheng-Tai Peng
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Publication number: 20200126774Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.Type: ApplicationFiled: September 30, 2019Publication date: April 23, 2020Inventors: Tsung-Min LIN, Fang-Chi Chien, Cheng-Yi Huang, Chao-Po Lu
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Publication number: 20190252221Abstract: A method for transferring a micro device includes: preparing a carrier substrate with the micro device thereon in which an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head comprising a force-adjustable glue layer thereon; forming a liquid layer on a receiving substrate; reducing the grip force of the force-adjustable glue layer of the transfer head to be smaller than a force attaching the micro device to the receiving substrate; placing the micro device over the receiving substrate such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.Type: ApplicationFiled: April 23, 2019Publication date: August 15, 2019Inventors: Shyh-Feng CHEN, Li-Yi CHEN, Fang-Chi CHIEN
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Publication number: 20190252222Abstract: A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate by the transfer head such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.Type: ApplicationFiled: April 23, 2019Publication date: August 15, 2019Inventors: Li-Yi CHEN, Fang-Chi CHIEN
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Publication number: 20190061094Abstract: A stopper includes a head portion sized and configured to be coupled to an upper platen of a chemical-mechanical planarization system and a stopper leg sized and configured to direct a flow of liquid slurry applied to an upper planar surface of the upper platen substantially away from a lower surface of the upper platen.Type: ApplicationFiled: January 29, 2018Publication date: February 28, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kanyu Han, Juster Huang, Fang-Chi Chien, Stone Chen, Sheng-Tai Peng
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Patent number: 10163609Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.Type: GrantFiled: March 31, 2017Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Min Lin, Ming-Hsing Li, Fang-Chi Chien, Chao-Li Shih, Hong-Hsing Chou
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Publication number: 20180174807Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.Type: ApplicationFiled: March 31, 2017Publication date: June 21, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Min LIN, Ming-Hsing LI, Fang-Chi CHIEN, Chao-Li SHIH, Hong-Hsing CHOU
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Patent number: 7518129Abstract: A method for identifying a drifted dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second dose integrator including a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value. The implantation system further includes a processing unit comparing the first accumulated dosage value and the second accumulated dosage value to detect a drift in one of the first and the second dose integrators.Type: GrantFiled: May 3, 2006Date of Patent: April 14, 2009Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jih-Hwa Wang, Otto Chen, Fang-Chi Chien, Tung-Li Lee, Pu-Fang Chen
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Publication number: 20070257210Abstract: A method for identifying a drifted dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second dose integrator including a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value. The implantation system further includes a processing unit comparing the first accumulated dosage value and the second accumulated dosage value to detect a drift in one of the first and the second dose integrators.Type: ApplicationFiled: May 3, 2006Publication date: November 8, 2007Inventors: Jih-Hwa Wang, Otto Chen, Fang-Chi Chien, Tung-Li Lee, Pu-Fang Chen