Patents by Inventor Fang-Hong Yao

Fang-Hong Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METAL GATE STRUCTURE AND METHOD OF FORMING THE SAME
    Publication number: 20160126331
    Abstract: The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench and comprises a bottom portion and a side portion, wherein a ratio between a thickness of the bottom portion and a thickness of the side portion is between 2 and 5. The trench is filled with the metal layer. The present invention further provides a method of forming the metal gate structure.
    Type: Application
    Filed: November 26, 2014
    Publication date: May 5, 2016
    Inventors: Chi-Ju Lee, Yao-Chang Wang, Nien-Ting Ho, Chi-Mao Hsu, Kuan-Cheng Su, Main-Gwo Chen, Hsiao-Kwang Yang, Fang-Hong Yao, Sheng-Huei Dai, Tzung-Lin Li
  • Metal gate structure and method of forming the same
    Patent number: 9331161
    Abstract: The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench and comprises a bottom portion and a side portion, wherein a ratio between a thickness of the bottom portion and a thickness of the side portion is between 2 and 5. The trench is filled with the metal layer. The present invention further provides a method of forming the metal gate structure.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: May 3, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chi-Ju Lee, Yao-Chang Wang, Nien-Ting Ho, Chi-Mao Hsu, Kuan-Cheng Su, Main-Gwo Chen, Hsiao-Kwang Yang, Fang-Hong Yao, Sheng-Huei Dai, Tzung-Lin Li