Patents by Inventor Fang-I Li
Fang-I Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10586895Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesseType: GrantFiled: March 6, 2019Date of Patent: March 10, 2020Assignee: Epistar CorporationInventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Publication number: 20190207061Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesseType: ApplicationFiled: March 6, 2019Publication date: July 4, 2019Inventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Patent number: 10256371Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; one or a plurality of indentations, comprising a bottom part extending downward through the second semiconductor layer and the active layer to reach the first semiconductor layer and exposing the first semiconductor layer; a plurality of metal layers, comprising a first metal layer connecting to the first semiconductor layer through the bottom part, and a second metal layer deposited on the first metal layer; and an insulating layer formed between the first and the second metal layers, disposed on the indentation and covering the first metal layer, wherein the second metal layer comprises one or a plurality of recesses at a top surface thereof corresponding to the one or plurality of indentations.Type: GrantFiled: August 14, 2015Date of Patent: April 9, 2019Assignee: EPISTAR CORPORATIONInventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Patent number: 9685590Abstract: The present invention relates to a light-emitting diode (LED), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the LED. Thereby, at least a portion of light emitted from the active layer is reflected by the single metal reflective layer, and thus enhancing the light-emitting efficiency of the LED.Type: GrantFiled: November 18, 2016Date of Patent: June 20, 2017Assignee: EPISTAR CORPORATIONInventors: Yu-Yun Chen, Yung-Hsin Lin, Fang-I Li, Shyi-Ming Pan
-
Publication number: 20170104134Abstract: The present invention relates to a light-emitting diode (LED), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the LED. Thereby, at least a portion of light emitted from the active layer is reflected by the single metal reflective layer, and thus enhancing the light-emitting efficiency of the LED.Type: ApplicationFiled: November 18, 2016Publication date: April 13, 2017Inventors: Yu-Yun CHEN, Yung-Hsin LIN, Fang-I LI, Shyi-Ming PAN
-
Patent number: 9502616Abstract: The present invention relates to a light-emitting diode (LED), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the LED. Thereby, at least a portion of light emitted from the active layer is reflected by the single metal reflective layer, and thus enhancing the light-emitting efficiency of the LED.Type: GrantFiled: March 9, 2015Date of Patent: November 22, 2016Assignee: EPISTAR CORPORATIONInventors: Yu-Yun Chen, Yung-Hsin Lin, Fang-I Li, Shyi-Ming Pan
-
Patent number: 9490409Abstract: A light emitting diode (LED) chip including a first type semiconductor layer, an light-emitting layer, a second type semiconductor layer, a current blocking layer, a transparent conductive layer and an electrode is provided. The light-emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light-emitting layer. The current blocking layer is disposed on the second type semiconductor layer. The transparent conductive layer is disposed on the second type semiconductor layer and covered the current blocking layer. The electrode is disposed on the transparent conductive layer corresponding to the current blocking layer. The current blocking layer and the electrode respectively have a first width and a second width in a cross section view, and the first width of the current blocking layer is larger than the second width of the electrode.Type: GrantFiled: September 19, 2014Date of Patent: November 8, 2016Assignee: FORMOSA EPITAXY INCORPORATIONInventors: Chih-Hsuan Lu, Yu-Yun Chen, Yung-Hsin Lin, Fang-I Li, Shyi-Ming Pan
-
Publication number: 20160087155Abstract: The present invention relates to a light-emitting diode (LED), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the LED. Thereby, at least a portion of light emitted from the active layer is reflected by the single metal reflective layer, and thus enhancing the light-emitting efficiency of the LED.Type: ApplicationFiled: March 9, 2015Publication date: March 24, 2016Inventors: YU-YUN CHEN, YUNG-HSIN LIN, FANG-I LI, SHYI-MING PAN
-
Publication number: 20150357519Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; at least one indentation comprising a bottom part extending downward to reach the first semiconductor layer and exposing the first semiconductor layer; a first metal layer disposed on the second semiconductor layer, connecting to the first semiconductor layer at the bottom part of the indention; and an first insulating layer deposited on the second semiconductor layer and between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer.Type: ApplicationFiled: August 14, 2015Publication date: December 10, 2015Inventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Patent number: 9130129Abstract: A light-emitting diode (LED) chip comprising a first semiconductor layer; an active layer disposed on said first semiconductor layer; a second semiconductor layer disposed on said active layer; metal layers which disposed on said second semiconductor layer and overlapped with each other indirectly, comprising a first metal layer which connected to a first electrode deposited on said first semiconductor, and a second metal layer which connected to a transparent conductive layer and a second electrode deposited on said second semiconductor layer; wherein said second metal layer deposited on said first metal layer which further connected to said first semiconductor layer through an indentation.Type: GrantFiled: December 14, 2012Date of Patent: September 8, 2015Assignee: Formosa Epitaxy IncorporationInventors: Han-Zhong Liao, Chih-Hsuan Lu, Fang-I Li, Wei-Kang Cheng, Shyi-Ming Pan
-
Publication number: 20150008475Abstract: A light emitting diode (LED) chip including a first type semiconductor layer, an light-emitting layer, a second type semiconductor layer, a current blocking layer, a transparent conductive layer and an electrode is provided. The light-emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light-emitting layer. The current blocking layer is disposed on the second type semiconductor layer. The transparent conductive layer is disposed on the second type semiconductor layer and covered the current blocking layer. The electrode is disposed on the transparent conductive layer corresponding to the current blocking layer. The current blocking layer and the electrode respectively have a first width and a second width in a cross section view, and the first width of the current blocking layer is larger than the second width of the electrode.Type: ApplicationFiled: September 19, 2014Publication date: January 8, 2015Inventors: Chih-Hsuan Lu, Yu-Yun Chen, Yung-Hsin Lin, Fang-I Li, Shyi-Ming Pan
-
Patent number: 8188493Abstract: Abstract of Disclosure A light emitting diode includes a substrate, an N-doped layer disposed on the substrate, a plurality of cathodes disposed between the N-doped layer and the substrate, an active layer disposed on the N-doped layer, a P-doped layer disposed on the active layer, and a plurality of anodes disposed on the P-doped layer. The cathodes are electrically connected to the N-doped layer, and the patterns of the cathodes are disconnected from each other. The anodes are electrically connected to the P-doped layer, and the patterns of the anodes are disconnected from each other. Each cathode and a corresponding anode form a loop, and each loop is an independent loop.Type: GrantFiled: December 3, 2010Date of Patent: May 29, 2012Assignee: Formosa Epitaxy IncorporationInventors: Fang-I Li, Wei-Kang Cheng, Chih-Hsuan Lu, Yi-Sheng Ting, Shyi-Ming Pan
-
Publication number: 20120061711Abstract: A light emitting diode includes a substrate, an N-doped layer disposed on the substrate, a plurality of cathodes disposed between the N-doped layer and the substrate, an active layer disposed on the N-doped layer, a P-doped layer disposed on the active layer, and a plurality of anodes disposed on the P-doped layer. The cathodes are electrically connected to the N-doped layer, and the patterns of the cathodes are disconnected from each other. The anodes are electrically connected to the P-doped layer, and the patterns of the anodes are disconnected from each other. Each cathode and a corresponding anode form a loop, and each loop is an independent loop.Type: ApplicationFiled: December 3, 2010Publication date: March 15, 2012Inventors: Fang-I Li, Wei-Kang Cheng, Chih-Hsuan Lu, Yi-Sheng Ting, Shyi-Ming Pan