Abstract: Calculate the WIPi for a stage STkk for each lot Li in a queue of lots being processed in a production line between the stage STkk and an end point, where “i” is a positive integer representing the position of the lot Li in the queue, and where “kk” is a positive integer indicating the sequential position of the stage STkk (location along the production line) from the beginning to the end of a predetermined portion of the production line. Calculate remaining scheduled cycle time (RCTi) for each lot Li. Calculate consumed scheduled cycle time (CSTi) for each lot Li. Calculate (WIPi*RCTi) for each lot Li. Calculate (WIP*CSTi) for each lot Li. Sum WIPi*RCTi for all lots Li of a stage. Sum WIPi*CST for all lots Li of a stage.

Abstract: A method for etching access opening to aluminum alloy wire bonding pads of integrated circuit chips is described wherein a polymer layer is in-situ deposited into the opening after the bonding pad has been exposed by dry etching of a passivation layer. The passivation layer, is first etched with fluorocarbon etchants and then a TiN ARC layer is removed from over the aluminum bonding pad with etchants which may contain chlorine either as etch components or as a contaminant in an etchant such as SF.sub.6 non-volatile chlorine containing residues including AlCl.sub.3 and trapped Cl.sub.2, are left behind after the ARC layer has been removed. These cause corrosion of the bonding pad when exposed to atmospheric moisture. The polymer layer deposited immediately after the pad surface is exposed by the etchant, provides a temporary seal over the aluminum bonding pad, protecting it from exposure to moisture during subsequent processing steps.