Abstract: A color conversion panel and a display device are provided. The color conversion panel includes an opaque substrate and a sapphire substrate. The opaque substrate includes a plurality of first pixel openings, a plurality of second pixel openings and a plurality of third pixel openings. The first pixel openings are filled with red quantum dot material, and the second pixel openings are filled with green quantum dot material. The sapphire substrate is on the opaque substrate. A first surface of the sapphire substrate that faces the opaque substrate has a plurality of first arc surfaces corresponding to the first pixel openings, a plurality of second arc surfaces corresponding to the second pixel openings, and a plurality of third arc surfaces corresponding to the third pixel openings.

Abstract: An electronic device includes: a first substrate; a second substrate, disposed opposite to the first substrate; an insulating layer, disposed on a surface of the first substrate away from the second substrate; and a metal layer, disposed on a surface of the second substrate away from the first substrate, wherein a width of the insulating layer is different from a width of the metal layer.

Abstract: The present disclosure provides a screen detection method, an apparatus and a device, a computer program and a readable medium, and belongs to the technical field of screens. The method includes: receiving a cylindrical lens detection instruction for a target screen, wherein the cylindrical lens detection instruction at least includes target viewpoints; acquiring browsing images shot from the target screen under the target viewpoints in response to the detection instruction, wherein the target screen is a screen of which the light emission side is provided with cylindrical lenses; using the browsing images as viewpoint images under the condition that the browsing images include target contents; and outputting detection parameters of the cylindrical lenses on the target screen based on image parameters of the viewpoint images.

Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

Abstract: A device comprise a first semiconductor channel layer over a substrate, a second semiconductor channel layer over the first semiconductor channel layer, and source/drain epitaxial structures on opposite sides of the first semiconductor channel layer and opposite sides of the second semiconductor channel layer. A compressive strain in the second semiconductor channel layer is greater than a compressive strain in the first semiconductor channel layer. The source/drain epitaxial structures each comprise a first region interfacing the first semiconductor channel layer and a second region interfacing the second semiconductor channel layer, and the first region has a composition different from a composition of the second region.

Abstract: A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.

Abstract: A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.

Abstract: A device comprises a plurality of nanosheets, source/drain stressors, and a gate structure wrapping around the nanosheets. The nanosheets extend in a first direction above a semiconductor substrate and are arranged in a second direction substantially perpendicular to the first direction. The source/drain stressors are on either side of the nanosheets. Each of the source/drain stressors comprises a first epitaxial layer and a second epitaxial layer over the first epitaxial layer. The first and second epitaxial layers are made of a Group IV element and a Group V element. An atomic ratio of the Group V element to the Group IV element in the second epitaxial layer is greater than an atomic ratio of the Group V element to the Group IV element in the first epitaxial layer.

Abstract: Techniques are provided for mapping natural language to code segments. In one embodiment, the techniques involve receiving a document and software code, wherein the document comprises a natural language description of a use of the code, generating, via a vectorization process performed on the document, at least one vector or word embedding, generating, via a natural language processing technique performed on the at least one vector or word embedding, a first label set, generating, via a machine learning analysis of the software code, a second label set, determining, based on a comparison of the first label set and the second label set, a match confidence between the document and the software code, wherein the match confidence indicates a measure of similarity between the first label set and the second label set, and upon determining that the match confidence exceeds a predefined threshold, mapping the document to the software code.

Abstract: The present disclosure is directed to semiconductor structures with source/drain epitaxial stacks having a low-melting point top layer and a high-melting point bottom layer. For example, a semiconductor structure includes a gate structure disposed on a fin and a recess formed in a portion of the fin not covered by the gate structure. Further, the semiconductor structure includes a source/drain epitaxial stack disposed in the recess, where the source/drain epitaxial stack has bottom layer and a top layer with a higher activated dopant concentration than the bottom layer.

Abstract: A device includes plural semiconductor fins, a gate structure, an interlayer dielectric (ILD) layer, and an isolation dielectric. The gate structure is across the semiconductor fins. The ILD surrounds the gate structure. The isolation dielectric is at least between the semiconductor fins and has a thermal conductivity greater than a thermal conductivity of the ILD layer.

Abstract: Techniques are provided for mapping natural language to code segments. In one embodiment, the techniques involve receiving a document and software code, wherein the document comprises a natural language description of a use of the code, generating, via a vectorization process performed on the document, at least one vector or word embedding, generating, via a natural language processing technique performed on the at least one vector or word embedding, a first label set, generating, via a machine learning analysis of the software code, a second label set, determining, based on a comparison of the first label set and the second label set, a match confidence between the document and the software code, wherein the match confidence indicates a measure of similarity between the first label set and the second label set, and upon determining that the match confidence exceeds a predefined threshold, mapping the document to the software code.

Abstract: The present disclosure is directed to semiconductor structures with source/drain epitaxial stacks having a low-melting point top layer and a high-melting point bottom layer. For example, a semiconductor structure includes a gate structure disposed on a fin and a recess formed in a portion of the fin not covered by the gate structure. Further, the semiconductor structure includes a source/drain epitaxial stack disposed in the recess, where the source/drain epitaxial stack has bottom layer and a top layer with a higher activated dopant concentration than the bottom layer.

Abstract: The present invention provides a compound of Formula (I) or a pharmaceutically acceptable salt thereof; a method for manufacturing the compounds of the invention, and its therapeutic uses. The present invention further provides a combination of pharmacologically active agents and a pharmaceutical composition.

Abstract: A method, system, and computer program product for implementing automated cognitive software application error detection is provided. The method includes receiving data associated with model based self-learning software code. The annotated data is automatically divided with respect to specified categorization and grouping attributes and categorized groups comprising portions of the annotated data are generated and analyzed. At least one incorrect annotation associated a group of the categorized groups is detected and filtered. Likewise, a correct annotation for the group is detected and retrieved from a database. The correct annotation is appended to the group.

Abstract: The present invention provides a compound of Formula (I) or a pharmaceutically acceptable salt thereof; (I) a method for manufacturing the compounds of the invention, and its therapeutic uses. The present invention further provides a combination of pharmacologically active agents and a pharmaceutical composition.

Abstract: A method and device for removing an electromagnetic core, the method including: using an electromagnet to magnetize or demagnetize a metallic upper nozzle when a magneto-conductive workpiece is cut off in a WEDM manner; attracting a core capable of being completely cut off and separated in the workpiece; utilizing the metallic upper nozzle to detect whether attracted; if the core is attracted, moving the core to a target area; demagnetizing and dropping the core in a trash area. The device is applied to a WEDM machine; after the metallic magneto-conductive upper nozzle is magnetized by the electromagnet, the upper nozzle is used to attract the magneto-conductive core; a metallic water spray cover is utilized to detect whether the core is attracted; the core is moved to the target area by a motion system of the WEDM machine, and dropped in a trash device after the upper nozzle is demagnetized.

Abstract: A method includes forming a first semiconductor layer over a substrate; forming a second semiconductor layer over the first semiconductor layer; forming a dummy gate structure over the second semiconductor layer; performing an etching process to form a recess in the first and second semiconductor layers; forming a epitaxy structure over in the recess, wherein the epitaxy structure is in contact with the first and second semiconductor layers; performing a solid phase diffusion process to form a doped region in the epitaxy structure, in which the doped region is in contact with the second semiconductor layer and is separated from the first semiconductor layer; and replacing the dummy gate structure with a metal gate structure.

Abstract: A device comprises a plurality of nanosheets, source/drain stressors, and a gate structure wrapping around the nanosheets. The nanosheets extend in a first direction above a semiconductor substrate and are arranged in a second direction substantially perpendicular to the first direction. The source/drain stressors are on either side of the nanosheets. Each of the source/drain stressors comprises a first epitaxial layer and a second epitaxial layer over the first epitaxial layer. The first and second epitaxial layers are made of a Group IV element and a Group V element. An atomic ratio of the Group V element to the Group IV element in the second epitaxial layer is greater than an atomic ratio of the Group V element to the Group IV element in the first epitaxial layer.