Abstract: A method includes forming a fin structure over a substrate; forming a source/drain structure adjoining the fin structure, in which the source/drain structure includes tin; and exposing the source/drain structure to a boron-containing gas to diffuse boron into the source/drain structure to form a doped region in the source/drain structure.

Abstract: A semiconductor device includes a substrate, a channel structure and a metal gate structure. The channel structure protrudes above the substrate. The channel structure includes alternately stacked first portions and second portions having widths greater than widths of the first portions, and the first portions and the second portions are made of the same semiconductor material. The metal gate structure wraps around the channel structure.

Abstract: A method of manufacturing a semiconductor device includes forming an alloy semiconductor material layer comprising a first element and a second element on a semiconductor substrate. A mask is formed on the alloy semiconductor material layer to provide a masked portion and an unmasked portion of the alloy semiconductor material layer. The unmasked portion of the alloy semiconductor material layer not covered by the mask is irradiated with radiation from a radiation source to transform the alloy semiconductor material layer so that a surface region of the unmasked portion of the alloy semiconductor material layer has a higher concentration of the second element than an internal region of the unmasked portion of the alloy semiconductor material layer. The surface region surrounds the internal region.

Abstract: A semiconductor device includes a substrate, a channel structure, and a gate structure. The channel structure is over the substrate and extends along a first direction, in which the channel structure has plurality of first portions and plurality of second portions alternately stacked, and a width of the first portions is smaller than that of the second portions in a second direction different from the first direction. The gate structure is disposed over the substrate and crossing the channel structure along the second direction, in which the gate structure is in contact with the first portions and the second portions.

Abstract: A method of manufacturing a semiconductor device includes forming an alloy semiconductor material layer comprising a first element and a second element on a semiconductor substrate. A mask is formed on the alloy semiconductor material layer to provide a masked portion and an unmasked portion of the alloy semiconductor material layer. The unmasked portion of the alloy semiconductor material layer not covered by the mask is irradiated with radiation from a radiation source to transform the alloy semiconductor material layer so that a surface region of the unmasked portion of the alloy semiconductor material layer has a higher concentration of the second element than an internal region of the unmasked portion of the alloy semiconductor material layer. The surface region surrounds the internal region.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers on a substrate. The first and second semiconductor layers include first end portions on either side of a second portion along a length of the first and second semiconductor layers. The first and second semiconductor layers are formed of different materials. The second portion of the first semiconductor layers is removed to form spaces. A mask layer is formed over the second portion of an uppermost second semiconductor layer above the spaces. The first portions of first and second semiconductor layers are irradiated with radiation from a radiation source to cause material from the first portions of the first and second semiconductor layers to combine with each other.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers on a substrate. The first and second semiconductor layers include first end portions on either side of a second portion along a length of the first and second semiconductor layers. The first and second semiconductor layers are formed of different materials. The second portion of the first semiconductor layers is removed to form spaces. A mask layer is formed over the second portion of an uppermost second semiconductor layer above the spaces. The first portions of first and second semiconductor layers are irradiated with radiation from a radiation source to cause material from the first portions of the first and second semiconductor layers to combine with each other.

Abstract: A method includes forming a fin structure over a substrate; forming a source/drain structure adjoining the fin structure, in which the source/drain structure includes tin; and exposing the source/drain structure to a boron-containing gas to diffuse boron into the source/drain structure to form a doped region in the source/drain structure.

Abstract: A device includes a non-insulator structure, a first ILD layer, a first thermal via, and a first electrical via. The first ILD is over the non-insulator structure. The first thermal via is through the first ILD layer and in contact with the non-insulator structure. The first electrical via is through the first ILD layer and in contact with the non-insulator structure. The first thermal via and the first electrical via have different materials and the same height.

Abstract: A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.

Abstract: A semiconductor device includes a substrate, a channel structure, and a gate structure. The channel structure is over the substrate and extends along a first direction, in which the channel structure has plurality of first portions and plurality of second portions alternately stacked, and a width of the first portions is smaller than that of the second portions in a second direction different from the first direction. The gate structure is disposed over the substrate and crossing the channel structure along the second direction, in which the gate structure is in contact with the first portions and the second portions.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers on a substrate. The first and second semiconductor layers include first end portions on either side of a second portion along a length of the first and second semiconductor layers. The first and second semiconductor layers are formed of different materials. The second portion of the first semiconductor layers is removed to form spaces. A mask layer is formed over the second portion of an uppermost second semiconductor layer above the spaces. The first portions of first and second semiconductor layers are irradiated with radiation from a radiation source to cause material from the first portions of the first and second semiconductor layers to combine with each other.

Abstract: In a method of fabricating a field effect transistor, a fin structure made of a first semiconductor material is formed so that the fin structure protrudes from an isolation insulating layer disposed over a substrate. A gate structure is formed over a part of the fin structure, thereby defining a channel region, a source region and a drain region in the fin structure. After the gate structure is formed, laser annealing is performed on the fin structure.

Abstract: A method of manufacturing a semiconductor device includes forming an alloy semiconductor material layer comprising a first element and a second element on a semiconductor substrate. A mask is formed on the alloy semiconductor material layer to provide a masked portion and an unmasked portion of the alloy semiconductor material layer. The unmasked portion of the alloy semiconductor material layer not covered by the mask is irradiated with radiation from a radiation source to transform the alloy semiconductor material layer so that a surface region of the unmasked portion of the alloy semiconductor material layer has a higher concentration of the second element than an internal region of the unmasked portion of the alloy semiconductor material layer. The surface region surrounds the internal region.

Abstract: In a method of fabricating a field effect transistor, a fin structure made of a first semiconductor material is formed so that the fin structure protrudes from an isolation insulating layer disposed over a substrate. A gate structure is formed over a part of the fin structure, thereby defining a channel region, a source region and a drain region in the fin structure. After the gate structure is formed, laser annealing is performed on the fin structure.