Abstract: Mechanisms to calibrate a digital to analog converter (DAC) of an SDM (sigma delta modulator) are disclosed. An extra DAC element in addition to the DAC is used to function in place of a DAC element under calibration. A signal (e.g., a random sequence of ?1 and +1) is injected to the DAC element under calibration, and the estimated error and compensation are acquired.

Abstract: An analog to digital converter (ADC) comprises an input node having a variable analog input voltage, first and second switched capacitor circuits, an operational amplifier, and a control circuit. The first switched capacitor circuit has first and second capacitors and is coupled to the input node, and the second switched capacitor circuit has third and fourth capacitors and is coupled to the input node. The operational amplifier is configured to be conditionally coupled to only one of the first and second switched capacitor circuits at a time and configured to conditionally provide feedback to the switched capacitor circuits via an output node. The control circuit is coupled to the first and second switched capacitor circuits for conditional coupling to the operational amplifier.

Abstract: In a method of converting an analog signal to digital format, an analog input signal is received and processed using sigma-delta modulation to provide a first digital signal that represents the analog input signal in digital format and to provide a second digital signal that represents a first error introduced during the sigma-delta modulation. A second error that is error introduced during the sigma-delta modulation is estimated. A pre-correction signal is determined based on the first and second digital signals. A difference between the estimated second error and the pre-correction digital signal is determined to provide a digital output signal representing the analog input signal in digital format. An error correction element operable to adjust the digital output signal based on the analog input signal, the digital output signal, and the second digital signal is controlled.

Abstract: Mechanisms to calibrate a digital to analog converter (DAC) of an SDM (sigma delta modulator) are disclosed. An extra DAC element in addition to the DAC is used to function in place of a DAC element under calibration. A signal (e.g., a random sequence of ?1 and +1) is injected to the DAC element under calibration, and the estimated error and compensation are acquired.

Abstract: An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode includes a first doped semiconductor region of a first conductivity type, wherein the first doped semiconductor region is embedded in the semiconductor substrate; and a second doped semiconductor region over and adjoining the first doped semiconductor region, wherein the second doped semiconductor region is of a second conductivity type opposite the first conductivity type.

Abstract: A method of calibrating a digital-to-analog converter (DAC) is provided. The DAC includes a least-significant bit (LSB) block, and dummy LSB block adjacent to the LSB block. The DAC has a most-significant bit (MSB) block, which includes MSB thermometer macros. The method includes measuring the dummy LSB block to obtain a dummy LSB sum; and calibrating the MSB block so that each of the MSB thermometer macros provides a substantially same current as the dummy LSB sum.

Abstract: An analog to digital convertor (ADC) includes a plurality of comparators one of which is referred to as an auxiliary comparator (e.g., comparator “Aux”). This comparator Aux is calibrated in the background while other comparators function as usual. Once having been calibrated, the comparator Aux replaces a first comparator, which becomes a new comparator Aux, is calibrated, and replaces the second comparator. This second comparator becomes the new comparator Aux, is calibrated, and replaces the third comparator, etc., until all comparators are calibrated. In effect, at any one point in time, a comparator may be calibrated as desire while other comparators and thus the ADC are operating as usual.

Abstract: Mechanisms to calibrate a digital to analog converter (DAC) of an SDM (sigma delta modulator) are disclosed. An extra DAC element in addition to the DAC is used to function in place of a DAC element under calibration. A signal (e.g., a random sequence of ?1 and +1) is injected to the DAC element under calibration, and the estimated error and compensation are acquired.

Abstract: A method of operating an analog-to-digital converter (ADC) includes providing the ADC including a plurality of stages, each including an operational amplifier, and a first capacitor and a second capacitor including a first input end and a second input end, respectively. Each of the first capacitor and the second capacitor includes an additional end connected to a same input of the operational amplifier. The method further includes performing a plurality of signal conversions. Each of the signal conversions includes, in an amplifying phase of one of the plurality of stages, applying a first voltage to the first input end of the one of the plurality of stages, randomly selecting a second voltage from two different voltages; and applying the second voltage to the second input end of the one of the plurality of stages.

Abstract: A method of calibrating a digital-to-analog converter (DAC) is provided. The DAC includes a least-significant bit (LSB) block, and dummy LSB block adjacent to the LSB block. The DAC has a most-significant bit (MSB) block, which includes MSB thermometer macros. The method includes measuring the dummy LSB block to obtain a dummy LSB sum; and calibrating the MSB block so that each of the MSB thermometer macros provides a substantially same current as the dummy LSB sum.

Abstract: An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode includes a first doped semiconductor region of a first conductivity type, wherein the first doped semiconductor region is embedded in the semiconductor substrate; and a second doped semiconductor region over and adjoining the first doped semiconductor region, wherein the second doped semiconductor region is of a second conductivity type opposite the first conductivity type.

Abstract: A reference voltage circuit includes a first PMOS device having a first source, a first gate, and a first drain, wherein the first source is coupled to a power supply node; and a second PMOS device having a second source, a second gate and, a second drain. The second source is coupled to the power supply node. The first and the second PMOS devices have constant source-drain currents. The reference voltage circuit further includes a third PMOS device having a third source, a third gate, and a third drain; and a resistor coupled between the third drain and the ground. The third source is coupled to the power supply node. The first, the second, and the third gates are interconnected. The first, the second, and the third drains are virtually interconnected.

Abstract: A static random access memory (SRAM) cell includes a first load device, a first pull-down transistor, and a switch-box coupled between the first load device and the first pull-down transistor. The switch-box is configured to receive a switch control signal to turn off a first connection between the first load device and the first pull-down transistor during read operations of the SRAM cell and to turn on the first connection during write operations.

Abstract: A SRAM device includes at least one memory cell having a source line for receiving an internal supply power, and a voltage management circuit coupled to the source line for generating the internal supply power that varies in at least two different voltage levels, depending on various operation modes of the memory cell.

Abstract: A SRAM device includes at least one memory cell having a source line for receiving an internal supply power, and a voltage management circuit coupled to the source line for generating the internal supply power that varies in at least two different voltage levels, depending on various operation modes of the memory cell.

Abstract: A static random access memory (SRAM) cell includes a first load device, a first pull-down transistor, and a switch-box coupled between the first load device and the first pull-down transistor. The switch-box is configured to receive a switch control signal to turn off a first connection between the first load device and the first pull-down transistor during read operations of the SRAM cell and to turn on the first connection during write operations.

Abstract: A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

Abstract: Performance of a dual cascode voltage switch is improved and floating node effects including charge sharing and ratioing of output voltages are avoided by constituting the true and complement logic trees as pass gates of equal height, preferably limited, where possible, to a single transistor. The logic trees have substantially identical transistor layout configurations and different logic functions are established by selective connection of control and conduction terminals of the pass gates to reference logic level voltages of true and complement input variable signal values.