Patents by Inventor Fang Shu

Fang Shu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110263541
    Abstract: Described herein are compounds that are inhibitors of one or more protein kinases. Also described are pharmaceutical compositions and medicaments that include the compounds described herein. Also described herein are methods of using such protein kinase inhibitors, alone and in combination with other compounds, for conditions or diseases mediated or dependent upon protein kinases.
    Type: Application
    Filed: April 27, 2011
    Publication date: October 27, 2011
    Applicant: SHANGHAI GENOMICS, INC
    Inventors: Ying LUO, Fang SHU, Shudong WANG
  • Patent number: 8040460
    Abstract: This present invention provides an electronic paper display device. The electronic paper display device includes a thin film transistor array substrate and a display panel disposed on one side of the thin film transistor array substrate. The thin film transistor array substrate comprises a first substrate, a first metal layer, a dielectric layer, a second metal layer, a channel layer, a pixel electrode layer, a protection layer, a first resin layer and a second resin layer. The display panel includes a second substrate, a transparent electrode layer disposed on the second substrate, and an electronic ink material layer between the transparent electrode layer and the thin film transistor array substrate.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: October 18, 2011
    Assignee: E Ink Holdings Inc.
    Inventors: Ted-Hong Shinn, Chi-Ming Wu, Fang-An Shu, Yao-Chou Tsai
  • Publication number: 20110233537
    Abstract: An oxide thin film transistor includes a substrate, a gate layer, an oxide film and a gate insulating layer. The gate layer is disposed on the substrate. The oxide film is disposed on the substrate, and has a source region, a drain region and a channel region. The channel region is located between the source region and the drain region and corresponds to the gate layer. The electric conductivity of the source region and the drain region is greater than that of the channel region. The gate insulating layer is disposed on the substrate and located between the gate layer and the oxide film.
    Type: Application
    Filed: July 21, 2010
    Publication date: September 29, 2011
    Applicant: E Ink Holdings Inc.
    Inventors: Fang-An SHU, Ted-Hong Shinn, Sung-Hui Huang, Lee-Ting Chen, Yung-Sheng Chang
  • Publication number: 20110220906
    Abstract: The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conduction layer on a substrate; forming a gate insulation layer on the gate conduction layer; forming a source conduction layer and a drain conduction layer on the gate insulation layer, in which the drain conduction layer has an extension section extending to the pixel electrode region; forming a channel layer on the source conduction layer and the drain conduction layer; and forming a protection layer on the channel layer. The extension section and an electrode layer serve as the upper and lower electrode of the storage capacitor, respectively. Wherein the gate conduction layer, the source conduction layer, the drain conduction layer, and the channel layer are made of metallic oxides.
    Type: Application
    Filed: May 28, 2010
    Publication date: September 15, 2011
    Applicant: PRIME VIEW INTERNATIONAL CO., LTD.
    Inventors: SUNG-HUI HUANG, HENRY WANG, FANG AN SHU, TED-HONG SHINN
  • Publication number: 20110189818
    Abstract: A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.
    Type: Application
    Filed: May 5, 2010
    Publication date: August 4, 2011
    Inventors: Ted-Hong SHINN, Henry WANG, Fang-An SHU, Yao-Chou TSAI
  • Publication number: 20110159618
    Abstract: A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.
    Type: Application
    Filed: February 3, 2010
    Publication date: June 30, 2011
    Inventors: Ted-Hong Shinn, Henry Wang, Fang-An Shu, Yao-Chou Ysai
  • Publication number: 20110095285
    Abstract: A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device.
    Type: Application
    Filed: February 3, 2010
    Publication date: April 28, 2011
    Inventors: Fang-An SHU, Lee-Tyng Chen, Henry Wang, Wei-Chou Lan, Tung-Liang Lin
  • Publication number: 20110024739
    Abstract: A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.
    Type: Application
    Filed: February 2, 2010
    Publication date: February 3, 2011
    Inventors: Fang-An SHU, Lee-Tyng Chen, Henry Wang, Wei-Chou Lan
  • Publication number: 20100162524
    Abstract: A handle assembly includes a handle body, a handle leg connected with the handle body, and fastening portion adjacent to an end of the handle leg. The handle leg includes a notch defined in an outer surface of the handle leg. The fastening portion includes a head portion and a connecting portion extending from the head portion to connect an external apparatus. The head portion includes a receiving hole defined by an internal surface thereof and a block protrusion formed on the internal surface of the receiving hole and extending towards an axis of the fastening portion. The block protrusion of the head portion is engagably received in the notch of the handle leg to enable the fastening portion be rotatable round the axis of the fastening portion.
    Type: Application
    Filed: December 7, 2009
    Publication date: July 1, 2010
    Applicant: FOXSEMICON INTEGRATED TECHNOLOGY, INC.
    Inventors: FANG-SHU LIN, SHAN-JU LIN
  • Publication number: 20060046460
    Abstract: A method of fabricating a poly-crystal ITO thin film is provided. First, an amorphous ITO thin film is formed on a substrate. Then, a rapid thermal annealing process is performed to transform the amorphous ITO thin film into a poly-crystal ITO thin film. A method of fabricating a poly-crystal ITO electrode is further provided. First, an amorphous ITO thin film is formed on a TFT array substrate. Then, the amorphous ITO thin film is patterned to form a plurality of amorphous ITO electrodes. A rapid thermal annealing process is performed to transform the amorphous ITO electrodes into a plurality of poly-crystal ITO electrodes. A poly-crystal ITO thin film with improved planarity is formed. Processing time is reduced and throughput of the process is then improved.
    Type: Application
    Filed: October 11, 2004
    Publication date: March 2, 2006
    Inventor: Fang-An Shu
  • Patent number: 5653168
    Abstract: A stamping machine including a rubber stamping head angular position adjustment mechanism, which can be adjusted to the desired angular position for stamping different workpieces, a horizontal slide adjustment mechanism, which can be adjusted to move the rubber stamping head to the desired horizontal position, an automatic ink feeder, which can be adjusted to supply metered quantity of ink, a scraper carrier, which keeps the scraper blade and the ink application roller unit operated at the same elevation, an ink tray assembly, which is detachable, and a workpiece conveying mechanism, which uses a driving wheel driven by an air cylinder through a rack and a gear to turn a conveying chain in carrying a series of workpiece table plates for a continuous stamping operation.
    Type: Grant
    Filed: February 27, 1996
    Date of Patent: August 5, 1997
    Inventor: Ming Fang Shu
  • Patent number: 5560291
    Abstract: A stamping machine including a rubber stamping head angular position adjustment mechanism, which can be adjusted to the desired angular position for stamping different workpieces, a horizontal slide adjustment mechanism, which can be adjusted to move the rubber stamping head to the desired horizontal position, an automatic ink feeder, which can be adjusted to supply metered quantity of ink, a scraper carrier, which keeps the scraper blade and the ink application roller unit operated at the same elevation, an ink tray assembly, which is detachable, and a workpiece conveying mechanism, which uses a driving wheel driven by an air cylinder through a rack and a gear to turn a conveying chain in carrying a series of workpiece table plates for a continuous stamping operation.
    Type: Grant
    Filed: September 20, 1995
    Date of Patent: October 1, 1996
    Inventor: Ming Fang Shu