Patents by Inventor Fang-Wei LIN

Fang-Wei LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing memory structure
    Patent number: 10529726
    Abstract: A manufacturing method of a memory structure including the following steps is provided. A memory cell structure is formed on a substrate. The memory cell structure has a first side and a second side opposite to each other. A protective layer structure covering the memory cell structure is formed. The material of the protective layer structure is nitride. The protective layer structure is a continuous structure. The height of the protective layer structure adjacent to the second side of the memory cell structure is greater than the height of the protective layer structure adjacent to the first side of the memory cell structure.
    Type: Grant
    Filed: August 2, 2019
    Date of Patent: January 7, 2020
    Assignee: Winbond Electronics Corp.
    Inventors: Yi-Tsung Tsai, Yu-Chun Yang, Fang-Wei Lin, Hsin-Li Kuo
  • METHOD OF MANUFACTURING MEMORY STRUCTURE
    Publication number: 20190355732
    Abstract: A manufacturing method of a memory structure including the following steps is provided. A memory cell structure is formed on a substrate. The memory cell structure has a first side and a second side opposite to each other. A protective layer structure covering the memory cell structure is formed. The material of the protective layer structure is nitride. The protective layer structure is a continuous structure. The height of the protective layer structure adjacent to the second side of the memory cell structure is greater than the height of the protective layer structure adjacent to the first side of the memory cell structure.
    Type: Application
    Filed: August 2, 2019
    Publication date: November 21, 2019
    Applicant: Winbond Electronics Corp.
    Inventors: Yi-Tsung Tsai, Yu-Chun Yang, Fang-Wei Lin, Hsin-Li Kuo
  • Memory structure and manufacturing method thereof
    Patent number: 10438957
    Abstract: A memory structure including a substrate, a memory cell structure, and a protective layer structure is provided. The memory cell structure is disposed on the substrate and has a first side and a second side opposite to each other. The protective layer structure covers the memory cell structure. The material of the protective layer structure is nitride. The protective layer structure is a continuous structure. The height of the protective layer structure adjacent to the second side of the memory cell structure is greater than the height of the protective layer structure adjacent to the first side of the memory cell structure.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: October 8, 2019
    Assignee: Winbond Electronics Corp.
    Inventors: Yi-Tsung Tsai, Yu-Chun Yang, Fang-Wei Lin, Hsin-Li Kuo
  • MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20190013322
    Abstract: A memory structure including a substrate, a memory cell structure, and a protective layer structure is provided. The memory cell structure is disposed on the substrate and has a first side and a second side opposite to each other. The protective layer structure covers the memory cell structure. The material of the protective layer structure is nitride. The protective layer structure is a continuous structure. The height of the protective layer structure adjacent to the second side of the memory cell structure is greater than the height of the protective layer structure adjacent to the first side of the memory cell structure.
    Type: Application
    Filed: August 15, 2017
    Publication date: January 10, 2019
    Applicant: Winbond Electronics Corp.
    Inventors: Yi-Tsung Tsai, Yu-Chun Yang, Fang-Wei Lin, Hsin-Li Kuo
  • Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stack
    Patent number: 9558955
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a metal gate stack over a semiconductor substrate. The method also includes performing a hydrogen-containing plasma treatment on the metal gate stack to modify a surface of the metal gate stack. The hydrogen-containing plasma treatment includes exciting a gas mixture including a first hydrogen-containing gas and a second hydrogen-containing gas to generate a hydrogen-containing plasma.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: January 31, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ru-Shang Hsiao, Chi-Cherng Jeng, Chih-Mu Huang, Shin-Yeu Tsai, Fang-Wei Lin
  • STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH METAL GATE STACK
    Publication number: 20160225630
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a metal gate stack over a semiconductor substrate. The method also includes performing a hydrogen-containing plasma treatment on the metal gate stack to modify a surface of the metal gate stack. The hydrogen-containing plasma treatment includes exciting a gas mixture including a first hydrogen-containing gas and a second hydrogen-containing gas to generate a hydrogen-containing plasma.
    Type: Application
    Filed: July 9, 2015
    Publication date: August 4, 2016
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Shang HSIAO, Chi-Cherng JENG, Chih-Mu HUANG, Shin-Yeu TSAI, Fang-Wei LIN