Abstract: A chemical compound including Isopropyl-D-glucopyranoside derivatives and its chemical synthesis to prepare the chemical compound. The Isopropyl-D-glucopyranoside derivatives is used for promoting regeneration of injured brain neurons and retinal neurons.

Abstract: A method of encoding includes receiving a polygon mesh that includes a plurality of vertices; subdividing the polygon mesh to generate a plurality sub-vertices; determining a first normal vector of a first vertex in the polygon mesh and a second normal vector of a second vertex in the polygon mesh, the first vertex and the second vertex defining an edge in the polygon mesh; moving a sub-vertex from the plurality of sub-vertices located on the edge using the first normal vector and the second normal vector; determining a displacement between the moved sub-vertex and a reference vertex from the plurality of vertices; and generating a bitstream including the displacement.

Abstract: The disclosure provides antigen binding domains that bind cluster of differentiation 3 (CD3) protein, comprising the antigen binding domains that bind CD3?, polynucleotides encoding them, vectors, host cells, methods of making and using them.

Abstract: An automotive touch circuit device includes: an analog front-end circuit, a first storage, a second storage, a micro control unit and an ESD protector. The analog front-end circuit has an ESD detector for detection to output a detection result signal. The first storage stores a control parameter having a first error detection code based on which a first error detection signal is generated. The second storage stores touch data having a second error detection code based on which a second error detection signal is generated. The micro control unit generates a notification signal based on the control parameter and touch data. When detecting no ESD interference, the ESD protector enables the notification signal to be output. When detecting ESD interference and an error detection result represented by one of the first and second error detection signals indicates an error, the ESD protector disables the notification signal to be output.

Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.

Abstract: A method performed by at least one processor of an encoder comprises: performing, on an input 3D mesh, a symmetry detection process to estimate a partition plane. The method further comprises partitioning the input 3D mesh into a first side and a second side based on the partition plane, where the first side is opposite to the second side, and where a first vertex on the first side is symmetric to a second vertex on the second side. The method further comprises quantizing the first vertex and the second vertex in pairs to reduce a quantization error and symmetry prediction error associated with the first vertex and the second vertex.

Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.

Abstract: An airtight switch adapted for an airtight device comprises an enclosure and a lid structure which are adapted to be joined with each other at a junction plane. The airtight switch includes a slider disposed at one of the enclosure or the lid structure. The airtight switch includes a contact element disposed at the other of the enclosure or the lid structure. The contact element has a sloped surface, and the slider selectively abuts against the sloped surface. The airtight switch includes a linear drive device adapted to drive the slider to move linearly in a sliding direction. The sliding direction is parallel to the junction plane and non-perpendicular to a normal vector of the sloped surface. The airtight switch is adapted to be applied in an airtight device needing a switch with good sealing and airtightness.

Abstract: An exhaust condensation recovery device for solving an issue of difficulties in removing a gaseous working fluid diffused in an outer hood. An exhaust condensation recovery device includes a housing, including a gas inflow portion, a liquid inflow portion and a gas outflow portion, the housing including therein an accommodating chamber, wherein a liquid collection zone is formed below accommodating chamber, and the liquid outflow portion is in communication with the liquid collection zone; and a cooling module, forming a condensation channel in the accommodating chamber, wherein the condensation channel is located above the liquid collection zone, and two ends of the condensation channel are respectively in communication with the gas inflow portion and the gas outflow portion.

Abstract: An apparatus for automated maintenance, adapted for maintaining an airtight equipment comprises airtight equipment including a casing, which forms an accommodation space and is adapted to accommodate an equipment component in the accommodation space. The apparatus for automated maintenance includes an automated maintenance machine, adapted to store and transport the equipment component, an enclosure, connected to the automated maintenance machine, the enclosure forming an enclosure space and selectively connected to the airtight equipment via an enclosure opening such that the enclosure space is in communication with the accommodation space and forms airtightness. A robotic arm, disposed in the enclosure space, is adapted to enter the accommodation space to maintain or replace the equipment component of the airtight equipment, and further adapted to enter the automated maintenance machine to take and place the equipment component.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: The present disclosure relates to nanoparticle compositions for modifying antigen-specific T cells and uses thereof.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: A device includes a semiconductor fin, an isolation layer, a dielectric fin structure, and a gate structure. The semiconductor fin is over a substrate. The isolation layer is over the substrate and adjacent the semiconductor fin. The dielectric fin structure is over the isolation layer and includes a bottom dielectric fin and a top dielectric fin. The isolation layer surrounds a bottom of the bottom dielectric fin. The top dielectric fin is over the bottom dielectric fin and is spaced apart from the isolation layer. The gate structure is across the semiconductor fin and the dielectric fin structure, wherein a portion of the gate structure in contact with the isolation layer has a first width, and another portion of the gate structure in contact with the top dielectric fin has a second width greater than the first width.

Abstract: According to one or more embodiments, a method of encoding a mesh includes: determining a global symmetry plane of the mesh that divides the mesh into a first side and a second side; based on the determination that the mesh is partially symmetric: determining each vertex from the plurality of vertices having a symmetry error larger than a first error threshold; performing a clustering process on the plurality of vertices based on the determined symmetry error for each vertex such that each vertex having a symmetry error larger than the first symmetry error threshold is clustered together in one or more clusters; dividing the mesh into a plurality of sub-meshes based on the clustering process; determining whether each sub-mesh is one of fully symmetric, partially symmetric, and asymmetric; and performing symmetry coding on each sub-mesh from the plurality of sub-meshes that is determined to be fully symmetric.

Abstract: A device includes a semiconductor fin, an isolation layer, a dielectric fin structure, and a gate structure. The semiconductor fin is over a substrate. The isolation layer is over the substrate and adjacent the semiconductor fin. The dielectric fin structure is over the isolation layer and includes a bottom dielectric fin and a top dielectric fin. The isolation layer surrounds a bottom of the bottom dielectric fin. The top dielectric fin is over the bottom dielectric fin and is spaced apart from the isolation layer. The gate structure is across the semiconductor fin and the dielectric fin structure, wherein a portion of the gate structure in contact with the isolation layer has a first width, and another portion of the gate structure in contact with the top dielectric fin has a second width greater than the first width.

Abstract: The disclosure provides antigen binding domains that bind cluster of differentiation 3 (CD3) protein, comprising the antigen binding domains that bind CD3?, polynucleotides encoding them, vectors, host cells, methods of making and using them.

Abstract: Embodiments of the present invention provide isolated proteins comprising antigen binding domains that bind kallikrein related peptidase 2 (hK2), including monospecific and bispecific antibodies. Additional embodiments of the invention provide polynucleotides encoding the hk2-specific proteins, vectors, host cells, and methods of making and using them.

Abstract: The present disclosure provides for chimeric antigen receptors (CARs) that specifically target a human Kallikrein-2 (hK2), and immunoresponsive cells comprising such CARs, for the treatment of cancer.