Patents by Inventor Fang Yi

Fang Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250255893
    Abstract: A chemical compound including Isopropyl-D-glucopyranoside derivatives and its chemical synthesis to prepare the chemical compound. The Isopropyl-D-glucopyranoside derivatives is used for promoting regeneration of injured brain neurons and retinal neurons.
    Type: Application
    Filed: October 25, 2022
    Publication date: August 14, 2025
    Inventors: Linyi CHEN, Yi WANG, Wen-Ling LIAO, Yu-Tang LEE, Ting-Hsuan LU, Yu-Wen HUANG, Chia-Wei LI, Chen WANG, Fang-Yi CHEN, Chuan-Chin CHIAO
  • Publication number: 20250200816
    Abstract: A method of encoding includes receiving a polygon mesh that includes a plurality of vertices; subdividing the polygon mesh to generate a plurality sub-vertices; determining a first normal vector of a first vertex in the polygon mesh and a second normal vector of a second vertex in the polygon mesh, the first vertex and the second vertex defining an edge in the polygon mesh; moving a sub-vertex from the plurality of sub-vertices located on the edge using the first normal vector and the second normal vector; determining a displacement between the moved sub-vertex and a reference vertex from the plurality of vertices; and generating a bitstream including the displacement.
    Type: Application
    Filed: November 5, 2024
    Publication date: June 19, 2025
    Applicant: TENCENT AMERICA LLC
    Inventors: Fang-Yi CHAO, Xiaozhong XU, Thuong Nguyen CANH, Shan LIU
  • Publication number: 20250145711
    Abstract: The disclosure provides antigen binding domains that bind cluster of differentiation 3 (CD3) protein, comprising the antigen binding domains that bind CD3?, polynucleotides encoding them, vectors, host cells, methods of making and using them.
    Type: Application
    Filed: September 10, 2024
    Publication date: May 8, 2025
    Inventors: Adam Zwolak, Raymond Brittingham, Scott R. Brodeur, Rajkumar Ganesan, Sherry Lynn La Porte, Jinquan Luo, Fang Yi, Colleen M. Kane, Triveni K. Bhatt
  • Publication number: 20250130673
    Abstract: An automotive touch circuit device includes: an analog front-end circuit, a first storage, a second storage, a micro control unit and an ESD protector. The analog front-end circuit has an ESD detector for detection to output a detection result signal. The first storage stores a control parameter having a first error detection code based on which a first error detection signal is generated. The second storage stores touch data having a second error detection code based on which a second error detection signal is generated. The micro control unit generates a notification signal based on the control parameter and touch data. When detecting no ESD interference, the ESD protector enables the notification signal to be output. When detecting ESD interference and an error detection result represented by one of the first and second error detection signals indicates an error, the ESD protector disables the notification signal to be output.
    Type: Application
    Filed: July 18, 2024
    Publication date: April 24, 2025
    Inventors: Fang-Yi SU, Kai-Xiang YANG
  • Publication number: 20250126822
    Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.
    Type: Application
    Filed: December 27, 2024
    Publication date: April 17, 2025
    Inventors: Wan-Yi Kao, Fang-Yi Liao, Shu Ling Liao, Yen-Chun Huang, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui
  • Patent number: 12243279
    Abstract: A method performed by at least one processor of an encoder comprises: performing, on an input 3D mesh, a symmetry detection process to estimate a partition plane. The method further comprises partitioning the input 3D mesh into a first side and a second side based on the partition plane, where the first side is opposite to the second side, and where a first vertex on the first side is symmetric to a second vertex on the second side. The method further comprises quantizing the first vertex and the second vertex in pairs to reduce a quantization error and symmetry prediction error associated with the first vertex and the second vertex.
    Type: Grant
    Filed: September 21, 2023
    Date of Patent: March 4, 2025
    Assignee: TENCENT AMERICA LLC
    Inventors: Thuong Nguyen Canh, Xiaozhong Xu, Shan Liu, Fang-Yi Chao
  • Patent number: 12218221
    Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.
    Type: Grant
    Filed: May 13, 2022
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wan-Yi Kao, Fang-Yi Liao, Shu Ling Liao, Yen-Chun Huang, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui
  • Publication number: 20250006440
    Abstract: An airtight switch adapted for an airtight device comprises an enclosure and a lid structure which are adapted to be joined with each other at a junction plane. The airtight switch includes a slider disposed at one of the enclosure or the lid structure. The airtight switch includes a contact element disposed at the other of the enclosure or the lid structure. The contact element has a sloped surface, and the slider selectively abuts against the sloped surface. The airtight switch includes a linear drive device adapted to drive the slider to move linearly in a sliding direction. The sliding direction is parallel to the junction plane and non-perpendicular to a normal vector of the sloped surface. The airtight switch is adapted to be applied in an airtight device needing a switch with good sealing and airtightness.
    Type: Application
    Filed: December 18, 2023
    Publication date: January 2, 2025
    Inventors: CHUNG-PENG HUANG, FANG-YI LIN, KUAN-LIN CHEN, CHUN-CHING KUO
  • Publication number: 20250001622
    Abstract: An apparatus for automated maintenance, adapted for maintaining an airtight equipment comprises airtight equipment including a casing, which forms an accommodation space and is adapted to accommodate an equipment component in the accommodation space. The apparatus for automated maintenance includes an automated maintenance machine, adapted to store and transport the equipment component, an enclosure, connected to the automated maintenance machine, the enclosure forming an enclosure space and selectively connected to the airtight equipment via an enclosure opening such that the enclosure space is in communication with the accommodation space and forms airtightness. A robotic arm, disposed in the enclosure space, is adapted to enter the accommodation space to maintain or replace the equipment component of the airtight equipment, and further adapted to enter the automated maintenance machine to take and place the equipment component.
    Type: Application
    Filed: December 18, 2023
    Publication date: January 2, 2025
    Inventors: CHUNG-PENG HUANG, FANG-YI LIN, KUAN-LIN CHEN, CHUN-CHING KUO
  • Publication number: 20250003669
    Abstract: An exhaust condensation recovery device for solving an issue of difficulties in removing a gaseous working fluid diffused in an outer hood. An exhaust condensation recovery device includes a housing, including a gas inflow portion, a liquid inflow portion and a gas outflow portion, the housing including therein an accommodating chamber, wherein a liquid collection zone is formed below accommodating chamber, and the liquid outflow portion is in communication with the liquid collection zone; and a cooling module, forming a condensation channel in the accommodating chamber, wherein the condensation channel is located above the liquid collection zone, and two ends of the condensation channel are respectively in communication with the gas inflow portion and the gas outflow portion.
    Type: Application
    Filed: February 1, 2024
    Publication date: January 2, 2025
    Inventors: CHUNG-PENG HUANG, FANG-YI LIN, KUAN-LIN CHEN, CHUN-CHING KUO
  • Publication number: 20240387279
    Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.
    Type: Application
    Filed: July 28, 2024
    Publication date: November 21, 2024
    Inventors: Yen-Chun Huang, Shu Ling Liao, Fang-Yi Liao, Yu-Chang Lin
  • Publication number: 20240382606
    Abstract: The present disclosure relates to nanoparticle compositions for modifying antigen-specific T cells and uses thereof.
    Type: Application
    Filed: April 20, 2022
    Publication date: November 21, 2024
    Inventors: Gabriel A. Kwong, Shreyas Dahotre, Marielena Gamboa, Philip J. Santangelo, Fang-Yi Su, Daryll Vanover
  • Patent number: 12148672
    Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: November 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Chun Huang, Shu Ling Liao, Fang-Yi Liao, Yu-Chang Lin
  • Publication number: 20240371975
    Abstract: A device includes a semiconductor fin, an isolation layer, a dielectric fin structure, and a gate structure. The semiconductor fin is over a substrate. The isolation layer is over the substrate and adjacent the semiconductor fin. The dielectric fin structure is over the isolation layer and includes a bottom dielectric fin and a top dielectric fin. The isolation layer surrounds a bottom of the bottom dielectric fin. The top dielectric fin is over the bottom dielectric fin and is spaced apart from the isolation layer. The gate structure is across the semiconductor fin and the dielectric fin structure, wherein a portion of the gate structure in contact with the isolation layer has a first width, and another portion of the gate structure in contact with the top dielectric fin has a second width greater than the first width.
    Type: Application
    Filed: July 15, 2024
    Publication date: November 7, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wan-Yi KAO, Fang-Yi LIAO, Che-Hao CHANG, Yung-Cheng LU, Chi On CHUI
  • Publication number: 20240312065
    Abstract: According to one or more embodiments, a method of encoding a mesh includes: determining a global symmetry plane of the mesh that divides the mesh into a first side and a second side; based on the determination that the mesh is partially symmetric: determining each vertex from the plurality of vertices having a symmetry error larger than a first error threshold; performing a clustering process on the plurality of vertices based on the determined symmetry error for each vertex such that each vertex having a symmetry error larger than the first symmetry error threshold is clustered together in one or more clusters; dividing the mesh into a plurality of sub-meshes based on the clustering process; determining whether each sub-mesh is one of fully symmetric, partially symmetric, and asymmetric; and performing symmetry coding on each sub-mesh from the plurality of sub-meshes that is determined to be fully symmetric.
    Type: Application
    Filed: March 12, 2024
    Publication date: September 19, 2024
    Applicant: TENCENT AMERICA LLC
    Inventors: Fang-Yi CHAO, Thuong NGUYEN CANH, Xiaozhong XU, Shan Liu
  • Patent number: 12087843
    Abstract: A device includes a semiconductor fin, an isolation layer, a dielectric fin structure, and a gate structure. The semiconductor fin is over a substrate. The isolation layer is over the substrate and adjacent the semiconductor fin. The dielectric fin structure is over the isolation layer and includes a bottom dielectric fin and a top dielectric fin. The isolation layer surrounds a bottom of the bottom dielectric fin. The top dielectric fin is over the bottom dielectric fin and is spaced apart from the isolation layer. The gate structure is across the semiconductor fin and the dielectric fin structure, wherein a portion of the gate structure in contact with the isolation layer has a first width, and another portion of the gate structure in contact with the top dielectric fin has a second width greater than the first width.
    Type: Grant
    Filed: September 14, 2021
    Date of Patent: September 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wan-Yi Kao, Fang-Yi Liao, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui
  • Patent number: 12084501
    Abstract: The disclosure provides antigen binding domains that bind cluster of differentiation 3 (CD3) protein, comprising the antigen binding domains that bind CD3?, polynucleotides encoding them, vectors, host cells, methods of making and using them.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: September 10, 2024
    Assignee: Janssen Biotech, Inc.
    Inventors: Adam Zwolak, Raymond Brittingham, Scott R. Brodeur, Rajkumar Ganesan, Sherry Lynn La Porte, Jinquan Luo, Fang Yi, Colleen M. Kane, Triveni K. Bhatt
  • Patent number: 12077585
    Abstract: Embodiments of the present invention provide isolated proteins comprising antigen binding domains that bind kallikrein related peptidase 2 (hK2), including monospecific and bispecific antibodies. Additional embodiments of the invention provide polynucleotides encoding the hk2-specific proteins, vectors, host cells, and methods of making and using them.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: September 3, 2024
    Assignee: Janssen Biotech, Inc.
    Inventors: Rajkumar Ganesan, John Lee, Jinquan Luo, Theresa McDevitt, Fei Shen, Degang Song, Raymond Brittingham, Sathyadevi Venkataramani, Sanjaya Singh, Yonghong Zhao, Fang Yi, Sherry Lynn La Porte
  • Patent number: 12071466
    Abstract: The present disclosure provides for chimeric antigen receptors (CARs) that specifically target a human Kallikrein-2 (hK2), and immunoresponsive cells comprising such CARs, for the treatment of cancer.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: August 27, 2024
    Assignee: Janssen Biotech, Inc.
    Inventors: Raymond Brittingham, Rajkumar Ganesan, Sherry La Porte, John T. Lee, Jinquan Luo, Theresa McDevitt, Fei Shen, Sanjaya Singh, Degang Song, Sathyadevi Venkataramani, Fang Yi, Yonghong Zhao
  • Patent number: D1080660
    Type: Grant
    Filed: January 4, 2024
    Date of Patent: June 24, 2025
    Assignee: AMBIT MICROSYSTEMS (SHANGHAI) LTD.
    Inventors: Yun-Ting Hsu, Cheng-Han Liu, Fang-Yi Lee, Fang-Jou Chang, Chih-Ying Chang