Abstract: The present invention relates to an organic semiconducting compound and organic optoelectronic components using the same. The organic semiconducting compound own a novel chemical structure. By using the organic semiconducting compound to prepare organic optoelectronic compounds, environmentally friendly non-halogen solvent can be used. In addition, the photoresponsivity and detectivity are excellent in the near-infrared region.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.

Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: A method includes patterning a trench and depositing a first insulating material along sidewalls and a bottom surface of the trench using a conformal deposition process. Depositing the first insulating material includes forming a first seam between a first portion of the first insulating material on a first sidewall of the trench and a second portion of the first insulating material on a second sidewall of the trench. The method further includes etching the first insulating material below a top of the trench and depositing a second insulating material over the first insulating material and in the trench using a conformal deposition process. Depositing the second insulating material comprises forming a second seam between a first portion of the second insulating material on the first sidewall of the trench and a second portion of the second insulating material on a second sidewall of the trench.

Abstract: A method includes patterning a trench and depositing a first insulating material along sidewalls and a bottom surface of the trench using a conformal deposition process. Depositing the first insulating material includes forming a first seam between a first portion of the first insulating material on a first sidewall of the trench and a second portion of the first insulating material on a second sidewall of the trench. The method further includes etching the first insulating material below a top of the trench and depositing a second insulating material over the first insulating material and in the trench using a conformal deposition process. Depositing the second insulating material comprises forming a second seam between a first portion of the second insulating material on the first sidewall of the trench and a second portion of the second insulating material on a second sidewall of the trench.

Abstract: A method includes patterning a trench and depositing a first insulating material along sidewalls and a bottom surface of the trench using a conformal deposition process. Depositing the first insulating material includes forming a first seam between a first portion of the first insulating material on a first sidewall of the trench and a second portion of the first insulating material on a second sidewall of the trench. The method further includes etching the first insulating material below a top of the trench and depositing a second insulating material over the first insulating material and in the trench using a conformal deposition process. Depositing the second insulating material comprises forming a second seam between a first portion of the second insulating material on the first sidewall of the trench and a second portion of the second insulating material on a second sidewall of the trench.

Abstract: A device includes a semiconductor fin, an isolation layer, a dielectric fin structure, and a gate structure. The semiconductor fin is over a substrate. The isolation layer is over the substrate and adjacent the semiconductor fin. The dielectric fin structure is over the isolation layer and includes a bottom dielectric fin and a top dielectric fin. The isolation layer surrounds a bottom of the bottom dielectric fin. The top dielectric fin is over the bottom dielectric fin and is spaced apart from the isolation layer. The gate structure is across the semiconductor fin and the dielectric fin structure, wherein a portion of the gate structure in contact with the isolation layer has a first width, and another portion of the gate structure in contact with the top dielectric fin has a second width greater than the first width.

Abstract: A method includes patterning a trench and depositing a first insulating material along sidewalls and a bottom surface of the trench using a conformal deposition process. Depositing the first insulating material includes forming a first seam between a first portion of the first insulating material on a first sidewall of the trench and a second portion of the first insulating material on a second sidewall of the trench. The method further includes etching the first insulating material below a top of the trench and depositing a second insulating material over the first insulating material and in the trench using a conformal deposition process. Depositing the second insulating material comprises forming a second seam between a first portion of the second insulating material on the first sidewall of the trench and a second portion of the second insulating material on a second sidewall of the trench.

Abstract: A thermal probe includes a support element, a conductive pattern and a tip. The conductive pattern is disposed at the support element and has plural bending portions. The tip has a base and a pinpoint. The base has a first surface and a second surface which is opposite to the first surface. The pinpoint is disposed at the first surface. The second surface is connected with the conductive pattern. The bending portions are contacted with the first surface. The tip of the thermal probe is replaceable, and the user can choose the optimum combination of the tip, conductive pattern and support element according to their needs.

Abstract: A thermal probe includes a support element, a conductive pattern and a tip. The support element has a slit or a through hole and has a first surface and a second surface which is opposite to the first surface. The conductive pattern is disposed at the first surface. The tip has a base and a pinpoint. The pinpoint is disposed at the base and passes through the slit or the through hole and highlights from the first surface. The base is connected with the second surface. The tip of the thermal probe of the invention can be replaced, and user can choose the best combination of the tip, conductive pattern and support element according to their needs.

Abstract: A thermal probe includes a support element, a conductive pattern and a tip. The support element has a slit or a through hole and has a first surface and a second surface which is opposite to the first surface. The conductive pattern is disposed at the first surface. The tip has a base and a pinpoint. The pinpoint is disposed at the base and passes through the slit or the through hole and highlights from the first surface. The base is connected with the second surface. The tip of the thermal probe of the invention can be replaced, and user can choose the best combination of the tip, conductive pattern and support element according to their needs.

Abstract: A thermal probe includes a support element, a conductive pattern and a tip. The conductive pattern is disposed at the support element and has plural bending portions. The tip has a base and a pinpoint. The base has a first surface and a second surface which is opposite to the first surface. The pinpoint is disposed at the first surface. The second surface is connected with the conductive pattern. The bending portions are contacted with the first surface. The tip of the thermal probe is replaceable, and the user can choose the optimum combination of the tip, conductive pattern and support element according to their needs.