Abstract: A method for forming a semiconductor device structure is provided. The method includes placing a substrate including a material layer thereon in a plasma chamber. The plasma chamber includes a housing, a first electrode array including a plurality of first sub-electrodes, a plurality of first matching units each electrically connected to one of the first sub-electrodes, and a second electrode array disposed in the housing, the second electrode array including a plurality of second sub-electrodes. The method also includes supplying an etching gas into the plasma chamber and applying a first RF power source to the first sub-electrodes of the first electrode array by the first matching units to form an etching plasma from the etching gas. The method further includes adjusting a distance between each of the first sub-electrodes and the substrate to generate a plasma density distribution across the substrate.

Abstract: A honeycomb structure is disclosed. The honeycomb structure includes a plurality of first partitions and a plurality of second partitions. The plurality of first partitions has a plurality of first honeycomb partitions. The plurality of second partitions has a plurality of second honeycomb partitions, and the plurality of first honeycomb partitions and the plurality of second honeycomb partitions are fitted to each other such that the plurality of second partitions and the plurality of first partitions are interdigitated to form at least one receiving portion, wherein the plurality of Its first honeycomb partitions have at least one die line. One part of at least one first honeycomb partition is bendable at least one die line to change the size of an opening size of the receiving portion corresponding to the at least one first honeycomb partition which is bended.

Abstract: A honeycomb structure is disclosed. The honeycomb structure includes a plurality of first partitions and a plurality of second partitions. The plurality of first partitions has a plurality of first honeycomb partitions. The plurality of second partitions has a plurality of second honeycomb partitions, and the plurality of first honeycomb partitions and the plurality of second honeycomb partitions are fitted to each other such that the plurality of second partitions and the plurality of first partitions are interdigitated to form at least one receiving portion, wherein the plurality of Its first honeycomb partitions have at least one die line. One part of at least one first honeycomb partition is bendable at least one die line to change the size of an opening size of the receiving portion corresponding to the at least one first honeycomb partition which is bended.

Abstract: A plasma processing apparatus is provided. The plasma processing apparatus includes a plasma chamber including a housing, and a first electrode array disposed above and outside the housing. The first electrode array includes a plurality of first sub-electrodes. The plasma processing apparatus also includes a number of first matching units outside of the housing, and each of the first matching units is electrically connected to each of the first sub-electrodes.

Abstract: Formation methods of a semiconductor device structure are provided. The method includes forming a bottom layer, a middle layer and an upper layer over a substrate, developing the upper layer to form an upper pattern with a first opening exposing the middle layer and a sidewall of the upper pattern. The upper pattern has a top surface. The method further includes conformally forming a protective layer over the upper pattern and the exposed middle layer, anisotropically etching the protective layer to leave a portion of the protective layer over the sidewall of the upper pattern and expose the middle layer, etching the middle layer not covered by the upper pattern and the portion of the protective layer to form a middle pattern with a second opening exposing the bottom layer, and etching the bottom layer though the second opening of the middle pattern.

Abstract: Formation methods of a semiconductor device structure are provided. The method includes forming a bottom layer, a middle layer and an upper layer over a substrate, developing the upper layer to form an upper pattern with a first opening exposing the middle layer and a sidewall of the upper pattern. The upper pattern has a top surface. The method further includes conformally forming a protective layer over the upper pattern and the exposed middle layer, anisotropically etching the protective layer to leave a portion of the protective layer over the sidewall of the upper pattern and expose the middle layer, etching the middle layer not covered by the upper pattern and the portion of the protective layer to form a middle pattern with a second opening exposing the bottom layer, and etching the bottom layer though the second opening of the middle pattern.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes forming a mask layer over a substrate, forming a material layer over the mask layer, forming a first blocking structure and a second blocking structure in the material layer separated from each other, and forming a first opening and a second opening in the material layer aligned with the first blocking structure. The method further includes forming a first spacer on sidewalls of the first opening and a second spacer on sidewalls of the second opening, forming a third opening and a fourth opening in the material layer aligned with the second blocking structure, etching the mask layer through the first opening, the second opening, the third opening, and the fourth opening.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes forming a mask layer over a substrate, forming a material layer over the mask layer, forming a first blocking structure and a second blocking structure in the material layer separated from each other, and forming a first opening and a second opening in the material layer aligned with the first blocking structure. The method further includes forming a first spacer on sidewalls of the first opening and a second spacer on sidewalls of the second opening, forming a third opening and a fourth opening in the material layer aligned with the second blocking structure, etching the mask layer through the first opening, the second opening, the third opening, and the fourth opening.