Abstract: A Ginkgo biloba wuschel-related homeobox 3A (GbWOX3A) gene and an application thereof in plant tissue culture are provided. The GbWOX3A gene is derived from a Ginkgo biloba embryo, the gene sequence of the GbWOX3A gene is SEQ ID NO: 1, and the amino acid sequence encoded by the GbWOX3A gene is SEQ ID NO: 2. An expression of the GbWOX3A gene in developing embryo of Ginkgo biloba and regenerating a callus has specificity, and transgenic function verification experiments prove that overexpression of the GbWOX3A gene can promote regeneration of adventitious buds during the plant tissue culture. Therefore, the GbWOX3A gene has important theoretical significance and application value in the plant tissue culture, and especially plays an important role in improving the regeneration efficiency of gymnosperms.

Abstract: A micro-flow throttling device, comprising: a casing used for assembling; a throttling structure mounted inside the casing to form resistance to control a fluid flow, wherein the throttling structure comprises a first axial hole formed inside a fine threaded rod, a first radial hole is formed on one side of the first axial hole, a fine thread flow channel is mounted on one side of the first radial hole, and a second cavity is formed between the fine thread flow channel and a coarse thread flow channel; a regulating structure mounted on the casing and used for regulating the flow rate of the fluid; and a butt-joint structure mounted on the inner wall of the casing and used for performing disassembly and assembly limiting on the throttling structure.

Abstract: The disclosure relates to a technical field of a semiconductor optoelectronic device, and more particularly, to a light emitting diode and a light emitting device. To solve an issue that a metal layer of the existing light emitting diode has insufficient adhesion on an insulation layer, the light emitting diode includes a semiconductor epitaxial stack layer including a first conductive semiconductor layer, a light emitting layer, and a second conductive semiconductor layer sequentially stacked and disposed; an interface transition layer located above the semiconductor epitaxial stack layer; the interface transition layer including an insulation metal oxide or a stack layer of the insulation metal oxides; a first insulation layer disposed between the interface transition layer and the semiconductor epitaxial stack layer; the metal layer covering a portion of a surface of the interface transition layer and electrically connected to the semiconductor epitaxial stack layer.

Abstract: Disclosed is a method for preparing an attapulgite-based pH-responsive antibacterial material, including: directly spraying a natural aldehyde-based antibacterial agent onto an attapulgite powder under stirring, and constantly stirring the attapulgite powder for 20-30 min; grinding the attapulgite powder in a ball mill for 30-60 min to obtain a ground attapulgite powder; placing the ground attapulgite powder in a stirred tank, and spraying a chitosan-citric acid aqueous solution onto the ground attapulgite powder; after spraying, constantly stirring the ground attapulgite powder for 30-120 min; and finally drying the ground attapulgite powder to obtain a dried attapulgite powder, sieving the dried attapulgite powder to obtain a sieved attapulgite powder, and packaging the sieved attapulgite powder to obtain the antibacterial material.

Abstract: A method for preparing a natural antibacterial agent by utilizing attapulgite pore channels to immobilize plant essential oil. Natural antibacterial agent plant essential oil is sprayed on the surface of attapulgite powder while stirring, after mechanically grinding the materials, a liquid glycerol monolaurate and quaternary ammonium salt aqueous solution are sequentially sprayed, after uniformly stirring and mixing the materials, a mixture is extruded by using an extruder, and drying, crushing and packaging are performed.

Abstract: Disclosed is a method for preparing an attapulgite-based pH-responsive antibacterial material, including: directly spraying a natural aldehyde-based antibacterial agent onto an attapulgite powder under stirring, and constantly stirring the attapulgite powder for 20-30 min; grinding the attapulgite powder in a ball mill for 30-60 min to obtain a ground attapulgite powder; placing the ground attapulgite powder in a stirred tank, and spraying a chitosan-citric acid aqueous solution onto the ground attapulgite powder; after spraying, constantly stirring the ground attapulgite powder for 30-120 min; and finally drying the ground attapulgite powder to obtain a dried attapulgite powder, sieving the dried attapulgite powder to obtain a sieved attapulgite powder, and packaging the sieved attapulgite powder to obtain the antibacterial material.

Abstract: Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using a boundary feature(s) containing a bond wire to define a perimeter on the die attach pad, depositing a conductive material (such as solder) within the perimeter, and then attaching a die containing an integrated circuit device to the die attach pad by using the conductive material. The boundary feature(s) allow an increased thickness of conductive material to be used, resulting in increased bond line thickness and increasing the durability and performance of the resulting semiconductor package. Other embodiments are described.

Abstract: Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using a boundary feature(s) containing a bond wire to define a perimeter on the die attach pad, depositing a conductive material (such as solder) within the perimeter, and then attaching a die containing an integrated circuit device to the die attach pad by using the conductive material. The boundary feature(s) allow an increased thickness of conductive material to be used, resulting in increased bond line thickness and increasing the durability and performance of the resulting semiconductor package. Other embodiments are described.

Abstract: Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using boundary features to define a perimeter on the die pad, depositing a conductive material (such as solder) within the perimeter, and then bonding a die containing an integrated circuit to the die pad by using the conductive material. The boundary features allow an increased thickness of conductive material to be used, resulting in an increased bond line thickness and increasing the durability and performance of the resulting semiconductor device.

Abstract: Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using boundary features to define a perimeter on the die pad, depositing a conductive material (such as solder) within the perimeter, and then bonding a die containing an integrated circuit to the die pad by using the conductive material. The boundary features allow an increased thickness of conductive material to be used, resulting in an increased bond line thickness and increasing the durability and performance of the resulting semiconductor device.