Abstract: Disclosed is a method for preparing an attapulgite-based pH-responsive antibacterial material, including: directly spraying a natural aldehyde-based antibacterial agent onto an attapulgite powder under stirring, and constantly stirring the attapulgite powder for 20-30 min; grinding the attapulgite powder in a ball mill for 30-60 min to obtain a ground attapulgite powder; placing the ground attapulgite powder in a stirred tank, and spraying a chitosan-citric acid aqueous solution onto the ground attapulgite powder; after spraying, constantly stirring the ground attapulgite powder for 30-120 min; and finally drying the ground attapulgite powder to obtain a dried attapulgite powder, sieving the dried attapulgite powder to obtain a sieved attapulgite powder, and packaging the sieved attapulgite powder to obtain the antibacterial material.

Abstract: A method for preparing a natural antibacterial agent by utilizing attapulgite pore channels to immobilize plant essential oil. Natural antibacterial agent plant essential oil is sprayed on the surface of attapulgite powder while stirring, after mechanically grinding the materials, a liquid glycerol monolaurate and quaternary ammonium salt aqueous solution are sequentially sprayed, after uniformly stirring and mixing the materials, a mixture is extruded by using an extruder, and drying, crushing and packaging are performed.

Abstract: Disclosed is a method for preparing an attapulgite-based pH-responsive antibacterial material, including: directly spraying a natural aldehyde-based antibacterial agent onto an attapulgite powder under stirring, and constantly stirring the attapulgite powder for 20-30 min; grinding the attapulgite powder in a ball mill for 30-60 min to obtain a ground attapulgite powder; placing the ground attapulgite powder in a stirred tank, and spraying a chitosan-citric acid aqueous solution onto the ground attapulgite powder; after spraying, constantly stirring the ground attapulgite powder for 30-120 min; and finally drying the ground attapulgite powder to obtain a dried attapulgite powder, sieving the dried attapulgite powder to obtain a sieved attapulgite powder, and packaging the sieved attapulgite powder to obtain the antibacterial material.

Abstract: Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using a boundary feature(s) containing a bond wire to define a perimeter on the die attach pad, depositing a conductive material (such as solder) within the perimeter, and then attaching a die containing an integrated circuit device to the die attach pad by using the conductive material. The boundary feature(s) allow an increased thickness of conductive material to be used, resulting in increased bond line thickness and increasing the durability and performance of the resulting semiconductor package. Other embodiments are described.

Abstract: Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using a boundary feature(s) containing a bond wire to define a perimeter on the die attach pad, depositing a conductive material (such as solder) within the perimeter, and then attaching a die containing an integrated circuit device to the die attach pad by using the conductive material. The boundary feature(s) allow an increased thickness of conductive material to be used, resulting in increased bond line thickness and increasing the durability and performance of the resulting semiconductor package. Other embodiments are described.

Abstract: Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using boundary features to define a perimeter on the die pad, depositing a conductive material (such as solder) within the perimeter, and then bonding a die containing an integrated circuit to the die pad by using the conductive material. The boundary features allow an increased thickness of conductive material to be used, resulting in an increased bond line thickness and increasing the durability and performance of the resulting semiconductor device.

Abstract: Die attach methods used in making semiconductor devices and the semiconductor devices resulting from those methods are described. The methods include providing a leadframe with a die attach pad, using boundary features to define a perimeter on the die pad, depositing a conductive material (such as solder) within the perimeter, and then bonding a die containing an integrated circuit to the die pad by using the conductive material. The boundary features allow an increased thickness of conductive material to be used, resulting in an increased bond line thickness and increasing the durability and performance of the resulting semiconductor device.