Abstract: A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing gas/oxygen containing gas mixture into the processing chamber proximate the etched metallization structure without the use of a downstream microwave while applying a magnetic field proximate the etched metallization structure and maintaining a pressure of less than about 50 millitorr within the processing chamber for a predetermined time.

Abstract: A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing gas/oxygen containing gas mixture into the processing chamber proximate the etched metallization structure without the use of a downstream microwave while applying a magnetic field proximate the etched metallization structure and maintaining a pressure of less than about 50 millitorr within the processing chamber for a predetermined time.

Abstract: A post-cleaning method of a via etching process for cleaning a wafer, the wafer having a tungsten (W) layer, an oxide layer covered on the tungsten layer, a photoresist layer patterned on the oxide layer, and a via passing through the photoresist layer and the oxide layer until a predetermined area of the tungsten layer is exposed, the cleaning method has the steps of: (a) performing a photoresist strip process to remove the photoresist layer; (b) performing a dry cleaning process which uses CF4 and N2H2 as the main reactive gas; and (c) performing a water-rinsing process.

Abstract: A post-cleaning method of a via etching process in the present invention has the steps of: (a) performing a photoresist strip process to remove the photoresist layer; b) performing a dry cleaning process which uses CF4 as the main reactive gas and is operated by dual powers; and (c) performing a water-rinsing process.

Abstract: A post-cleaning method of a via etching process for cleaning a wafer, the wafer having a tungsten (W) layer, an oxide layer covered on the tungsten layer, a photoresist layer patterned on the oxide layer, and a via passing through the photoresist layer and the oxide layer until a predetermined area of the tungsten layer is exposed, the cleaning method has the steps of: (a) performing a photoresist strip process to remove the photoresist layer; (b) performing a dry cleaning process which uses CF4 and N2H2 as the main reactive gas; and (c) performing a water-rinsing process.