Abstract: A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. An outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of the ceramic layer extends below the edge ring.

Abstract: A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. An outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of the ceramic layer extends below the edge ring.

Abstract: A substrate support includes a baseplate, a ceramic layer arranged on the baseplate, a bond layer arranged in a first gap between the baseplate and the ceramic layer, a channel formed through the baseplate, the bond layer, and the ceramic layer, and a plug arranged in the channel. The plug includes a lower portion arranged in the baseplate and an upper portion arranged in the ceramic layer. The lower portion includes a pocket and sidewalls surrounding the pocket. The upper portion extends below the ceramic layer and the first gap into the pocket, the sidewalls of the lower portion overlap the upper portion, and a second gap between the upper portion and the lower portion is located within the pocket of the lower portion below the first gap.

Abstract: A substrate support includes a conductive baseplate arranged to support a ceramic layer. The conductive baseplate includes a first cavity extending along an axis perpendicular to a horizontal plane defined by the conductive baseplate. A coupling assembly is arranged within the first cavity. The coupling assembly includes a gear configured to rotate about the axis. A pin arranged within the first cavity extends along the axis through the gear and into a second cavity below the conductive baseplate. Rotation of the gear causes the pin to move upward or downward relative to the conductive baseplate. The pin is retained within the second cavity when the gear is rotated to cause the pin to move downward into the second cavity.

Abstract: A pin lifter assembly for a substrate support in a substrate processing system includes a lift pin having a shaft, an upper end, and a lower end, and an insert arranged around the lift pin. The insert defines a gap between the insert and the lift pin. A clamp assembly is arranged around the lower end of the lift pin. The lower end of the lift pin is secured within the clamp assembly such that the clamp assembly prevents vertical movement of the lift pin relative to the clamp assembly. The clamp assembly is configured to allow horizontal movement of the lower end of the lift pin within the clamp assembly.

Abstract: An apparatus for processing a substrate is provided. A first coolant gas pressure system, a second coolant gas pressure system, a third coolant gas pressure system, and a fourth coolant gas pressure system are provided to provide independent gas pressures. An electrostatic chuck has a chuck surface with a center point and a radius and comprises a first plurality of coolant gas ports further than a first radius from a center point, a second plurality of coolant gas ports spaced between the first radius from the center point and a second radius from the center point, a third plurality of coolant gas ports spaced between the second radius from the center point and a third radius from the center point, and a fourth plurality of coolant gas ports is spaced within the third radius from the center point. An outer sealing band extends around the chuck surface.

Abstract: A substrate support includes a conductive baseplate arranged to support a ceramic layer. The conductive baseplate includes a first cavity extending along an axis perpendicular to a horizontal plane defined by the conductive baseplate. A coupling assembly is arranged within the first cavity. The coupling assembly includes a gear configured to rotate about the axis. A pin arranged within the first cavity extends along the axis through the gear and into a second cavity below the conductive baseplate. Rotation of the gear causes the pin to move upward or downward relative to the conductive baseplate. The pin is retained within the second cavity when the gear is rotated to cause the pin to move downward into the second cavity.

Abstract: A substrate support includes a baseplate, a ceramic layer arranged on the baseplate, a bond layer arranged in a first gap between the baseplate and the ceramic layer, a channel formed through the baseplate, the bond layer, and the ceramic layer, and a plug arranged in the channel. The plug includes a lower portion arranged in the baseplate and an upper portion arranged in the ceramic layer. The lower portion includes a pocket and sidewalls surrounding the pocket. The upper portion extends below the ceramic layer and the first gap into the pocket, the sidewalls of the lower portion overlap the upper portion, and a second gap between the upper portion and the lower portion is located within the pocket of the lower portion below the first gap.

Abstract: A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. An outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of the ceramic layer extends below the edge ring.

Abstract: A pin lifter assembly for a substrate support in a substrate processing system includes a lift pin having a shaft, an upper end, and a lower end, and an insert arranged around the lift pin. The insert defines a gap between the insert and the lift pin. A clamp assembly is arranged around the lower end of the lift pin. The lower end of the lift pin is secured within the clamp assembly such that the clamp assembly prevents vertical movement of the lift pin relative to the clamp assembly. The clamp assembly is configured to allow horizontal movement of the lower end of the lift pin within the clamp assembly.

Abstract: A gas delivery system for a plasma process system such as a plasma etching system wherein inner surfaces of gas passages are coated with a corrosion-resistant material coating formed by curing a layer of fluidic precursor deposited on the inner surfaces. The coating can be formed by (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.

Abstract: A gas delivery system for a plasma process system such as a plasma etching system wherein inner surfaces of gas passages are coated with a corrosion-resistant material coating formed by curing a layer of fluidic precursor deposited on the inner surfaces. The coating can be formed by (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.

Abstract: An automated hydrogen bubble detection apparatus includes a horizontal support surface on which a test coupon can be supported, a transparent tube having an open top and an open bottom and operable to contain a test solution when positioned on a test coupon, a camera arranged to view a test solution in the transparent tube, and a controller in communication with the camera and effective to operate the camera such that at least one video segment is recorded by the camera and analyzed to detect first bubble and continuous bubble generation. A method of evaluating corrosion resistance of coatings on aluminum and steel in acidic solution is also included.

Abstract: A method of coating the inner surfaces of gas passages of a gas delivery system for a plasma process system such as a plasma etching system includes (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.

Abstract: An apparatus for electrostatic chucking and dechucking of a semiconductor wafer includes an electrostatic chuck with a number of zones. Each zone includes one or more polar regions around a lift pin that contacts a bottom surface of the semiconductor wafer. The apparatus also includes one or more controllers that control the lift pins and one or more controllers that control the polar regions. The controller for the lift pins receives data from one or more sensors and uses the data to adjust the upward force of the lift pins. Likewise, the controller for the polar regions receives data from the sensors and uses the data to adjust the voltage in the polar regions.

Abstract: An automated hydrogen bubble detection apparatus includes a horizontal support surface on which a test coupon can be supported, a transparent tube having an open top and an open bottom and operable to contain a test solution when positioned on a test coupon, a camera arranged to view a test solution in the transparent tube, and a controller in communication with the camera and effective to operate the camera such that at least one video segment is recorded by the camera and analyzed to detect first bubble and continuous bubble generation. A method of evaluating corrosion resistance of coatings on aluminum and steel in acidic solution is also included.

Abstract: An apparatus for electrostatic chucking and dechucking of a semiconductor wafer includes an electrostatic chuck with a number of zones. Each zone includes one or more polar regions around a lift pin that contacts a bottom surface of the semiconductor wafer. The apparatus also includes one or more controllers that control the lift pins and one or more controllers that control the polar regions. The controller for the lift pins receives data from one or more sensors and uses the data to adjust the upward force of the lift pins. Likewise, the controller for the polar regions receives data from the sensors and uses the data to adjust the voltage in the polar regions.

Abstract: A method of coating the inner surfaces of gas passages of a gas delivery system for a plasma process system such as a plasma etching system includes (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.

Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.

Abstract: A port in a window member provides first access to a process chamber interior for gas injection and second optical access for process analysis and measurement. Plasma-induced etching and deposition in a bore of a gas injector integral with the window member is reduced by a grounded shield surrounding an access region, and coatings reduce particle flaking from walls of a first clear optical aperture of the injector and from a second clear optical aperture of a gas and optical access fitting,. The shield surrounds the region, and is configured with couplers to hold the gas and optical access fitting to the window member for access to the injector. The couplers compress seals so that a gas bore in the fitting is sealed to a plenum of the injector, while allowing optical access into the chamber through the first clear optical aperture and the second clear optical aperture.