Abstract: The present application provides an organic light emitting diode (OLED) display panel and a method of manufacturing the same, and a display terminal. The OLED display panel includes an array substrate, a protective layer and a cathode. The array substrate includes a first auxiliary electrode, a second auxiliary electrode, and a third auxiliary electrode. The third auxiliary electrode is connected to the first auxiliary electrode and the second auxiliary electrode. The protective layer is provided with an undercut opening exposing a portion of the third auxiliary electrode. The cathode extends into the undercut opening and is connected to the third auxiliary electrode.

Abstract: A driving substrate, a manufacturing method thereof, and a display panel are disclosed. The driving substrate includes a display area and a non-display area. The driving substrate includes a substrate, a first thin film transistor structure, and a second thin film transistor structure. The first thin film transistor structure is disposed on the substrate and corresponds to the non-display area. The first thin film transistor structure includes a first light shielding layer, a first active layer, and a first gate electrode. The first light shielding layer is multiplexed into the second gate. The first light shielding layer is electrically connected to the first gate electrode.

Abstract: The display panel includes a substrate and a plurality of thin film transistors disposed on the substrate. Each of the thin film transistors includes: a semiconductor layer on the substrate. The semiconductor layer includes a channel portion and conductor portions disposed on both sides of the channel portion. A gate electrode is defined with a first length, the channel portion is defined with a second length, and a ratio of the second length to the first length is greater than 0.7 and is less than or equal to 1.

Abstract: A display panel, a display device, and a method of manufacturing a display panel are provided. The display panel includes the plurality of stacked metal sub-layers and the first passivation sub-layer and the second passivation sub-layer stacked. The first passivation sub-layer is disposed between the metal layer and the second passivation layer. Material of the first passivation sub-layer includes silicon nitride. The first passivation sub-layer covers the untidy area at the ends of the molybdenum-titanium alloy thin layer to avoid from detachment of the passivation layer, and meanwhile to solve the issues of simplifying the manufacturing process of the display panel, and to avoid from oxidation of the bonding pads.

Abstract: The present disclosure provides a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a light shielding layer, an intermediate buffer layer, and a buffer layer, wherein the light shielding layer is formed on the substrate, the buffer layer is located above the substrate and the light shielding layer, the intermediate buffer layer is formed between the buffer layer and the light shielding layer, and the intermediate buffer layer is made of ceramic material.

Abstract: The present disclosure provides a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a light shielding layer, an intermediate buffer layer, and a buffer layer, wherein the light shielding layer is formed on the substrate, the buffer layer is located above the substrate and the light shielding layer, the intermediate buffer layer is formed between the buffer layer and the light shielding layer, and the intermediate buffer layer is made of ceramic material.

Abstract: A thin film transistor and a method for manufacturing the same are disclosed. The thin film transistor includes a substrate, a gate, an insulation layer, a first active layer, a second active layer, a source, a drain, and a protection layer. The gate is disposed on the substrate. The insulation layer covers the gate. The first active layer is disposed on the insulation layer and above the gate. The second active layer is disposed on the first active layer, wherein a material of the second active layer is a metal oxide in which oxygen vacancies are filled with nitrogen. The source is disposed on the second active layer. The drain is disposed on the second active layer, wherein the source and the drain are above two opposite sides of the gate. The protection layer covers the first active layer, the second active layer, the source, and drain.

Abstract: Provided is a manufacturing method of a flexible thin film transistor backplate. In the manufacturing method; the top gate type metal oxide thin film transistors (T) are formed on the flexible substrate (2). In comparison with the existing bottom gate type low-temperature polysilicon thin film transistors, the consistency of the top gate type metal oxide thin film transistors is good, the electron mobility is high, and the parasitic capacitance is smaller; meanwhile, the lowermost layer of the buffer layer (3) in contact with the flexible substrate (2) is the silicon nitride film (31) according to the manufacturing method of the flexible thin film transistor backplate, the adhesion between the buffer layer (3) and the flexible substrate (2) is good and the top of the buffer layer (3) is the alumina film (33), thus the buffer layer (3) can be made with better water vapor resistance.

Abstract: An inkjet printing OLED display panel and manufacturing method are provided. The method includes sequentially forming a passivation layer and a planarization layer on thin-film transistors on a glass substrate, and the passivation layer covers the thin-film transistors; forming vias both at the passivation layer and the planarization layer; forming anodes on the planarization layer, and the anodes are electrically connected to the thin-film transistors through the vias; depositing a pixel definition layer on the planarization layer, and the pixel definition layer covers the anodes; using a half-tone mask to define a pattern of the pixel definition layer such that a region of the pixel definition layer located above the anodes forms a notch, and a height of the pixel definition layer located between the anodes is decreased; using an inkjet printing technology to form a light-emitting layer in the notch of the pixel definition layer.

Abstract: The invention provides a manufacturing method of flexible TFT backplane. The method uses a mixed solution of carbon nanotubes and metal oxide to prepare active layer (61) of TFT (T), and the temperature is lower and will not cause damage to the flexible base substrate (2), and the material of flexible base substrate (2) is not restricted. The use of vacuum equipment is reduced to save production cost. The carbon nanotubes have excellent conductivity, and the mixture with metal oxide as the active layer (61) of the TFT can improve the electron mobility. The buffer layer (3) has a silicon nitride film (31) as the lowest layer contacting the flexible base substrate (2), making good adhesion between buffer layer (3) and flexible base substrate (2). The topmost layer of the buffer layer (3) is an aluminum oxide film (33), which enables the buffer layer (3) to resist to water.

Abstract: The invention provides a manufacturing method of flexible TFT backplane. The method uses a mixed solution of carbon nanotubes and metal oxide to prepare active layer (61) of TFT (T), and the temperature is lower and will not cause damage to the flexible base substrate (2), and the material of flexible base substrate (2) is not restricted. The use of vacuum equipment is reduced to save production cost. The carbon nanotubes have excellent conductivity, and the mixture with metal oxide as the active layer (61) of the TFT can improve the electron mobility. The buffer layer (3) has a silicon nitride film (31) as the lowest layer contacting the flexible base substrate (2), making good adhesion between buffer layer (3) and flexible base substrate (2). The topmost layer of the buffer layer (3) is an aluminum oxide film (33), which enables the buffer layer (3) to resist to water.

Abstract: A method for manufacturing an organic light-emitting diode (OLED) backplane is provided. The method includes sequentially depositing a first oxide semiconductor layer, a second oxide semiconductor layer and a third oxide semiconductor layer to obtain an active layer of a thin film transistor. The flow ratio of an argon gas and an oxygen gas introduced during the deposition of the first and third oxide semiconductor layers is greater than the flow ratio of the argon gas and the oxygen gas introduced during the deposition of the second oxide semiconductor layer. As a result, the oxygen content of the first and third oxide semiconductor layers is greater than the oxygen content of the second oxide semiconductor layer. Therefore, the conductivity of the active layer of the thin film transistor device is enhanced. The interface defects are reduced. The stability of the thin film transistor device is improved.

Abstract: A method for manufacturing an organic light-emitting diode(OLED) backplane is provided. The method includes sequentially depositing a first oxide semiconductor layer, a second oxide semiconductor layer and a third oxide semiconductor layer to obtain an active layer of a thin film transistor. The flow ratio of an argon gas and an oxygen gas introduced during the deposition of the first and third oxide semiconductor layers is greater than the flow ratio of the argon gas and the oxygen gas introduced during the deposition of the second oxide semiconductor layer. As a result, the oxygen content of the first and third oxide semiconductor layers is greater than the oxygen content of the second oxide semiconductor layer. Therefore, the conductivity of the active layer of the thin film transistor device is enhanced. The interface defects are reduced. The stability of the thin film transistor device is improved.

Abstract: An inkjet printing OLED display panel and manufacturing method are provided. The method includes sequentially forming a passivation layer and a. planarization layer on thin-film transistors on a glass substrate, and the passivation layer covers the thin-film transistors; forming vias both at the passivation layer and the planarization layer; forming anodes on the planarization layer, and the anodes are electrically connected to the thin-film transistors through the vias; depositing a pixel definition layer on the planarization layer, and the pixel definition layer covers the anodes; using a half-tone mask to define a pattern of the pixel definition layer such that a region of the pixel definition layer located above the anodes forms a notch, and a height of the pixel definition layer located between the anodes is decreased; using an inkjet printing technology to form a light-emitting layer in the notch of the pixel definition layer.

Abstract: Provided are a manufacturing method of a transistor on color filter type organic light emitting display and a transistor on color filter type organic light emitting display. In the manufacturing method of a transistor on color filter type organic light emitting display, after preparing the color filter layer, by coating the zinc oxide solution mixed with lithium on the gate insulation layer in a spin coating manner to form a zinc oxide coating layer mixed with lithium and then, by annealing the zinc oxide coating layer mixed with lithium and patterning the zinc oxide coating layer mixed with lithium to form a channel layer, the process temperature can be as low as 200 Celsius degrees to satisfy the temperature condition of manufacturing the transistor on color filter type organic light emitting display and the operation is easy without using the expensive vacuum equipment.

Abstract: Provided are a manufacturing method of a transistor on color filter type organic light emitting display and a transistor on color filter type organic light emitting display. In the manufacturing method of a transistor on color filter type organic light emitting display, after preparing the color filter layer, by coating the zinc oxide solution mixed with lithium on the gate insulation layer in a spin coating manner to form a zinc oxide coating layer mixed with lithium and then, by annealing the zinc oxide coating layer mixed with lithium and patterning the zinc oxide coating layer mixed with lithium to form a channel layer, the process temperature can be as low as 200 Celsius degrees to satisfy the temperature condition of manufacturing the transistor on color filter type organic light emitting display and the operation is easy without using the expensive vacuum equipment.