Abstract: The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.

Abstract: The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.

Abstract: A disposable vinyl glove having a fastening belt includes a hollow formed seamless body member, an open proximal end, and a cuff portion at the proximal end. The cuff portion has a fastening belt fixed on the outside surface of the cuff portion. The end of the fastening belt has an adhesive area, an adhesive layer is covering the adhesive area and a removable release sheet is covering the adhesive layer. The adhesive layer can stick with the surface of the cuff or tying belt together. After the glove is worn, the cuff of the glove is tightened on the wearer's wrist by the fastening belt and the adhesive means sticks the fastened tying belt and the outer surface of the cuff together, thereby the disposable vinyl glove is tightly secured on the wearer's hand. Thus, the disadvantages of the glove being loose on the wearer's hand and the chance that liquid can move into the glove are avoided.