Patents by Inventor FangYu Yang

FangYu Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and structure for self aligned contact for integrated circuits
    Patent number: 8507378
    Abstract: A high voltage integrated circuit device includes a semiconductor substrate having a surface region with a contact region, which is coupled to a source/drain region. The device has a plasma enhanced oxide overlying the surface region, a stop layer overlying the plasma enhanced oxide, and a contact opening through a portion of the stop layer and through a portion of the plasma enhanced oxide layer. The contact opening exposes a portion of the contact region without damaging it. The device has a silicide layer overlying the contact region to form a silicided contact region and an interlayer dielectric overlying the silicided contact region to fill the contact opening and provide a thickness of material overlying the stop layer. An opening in the interlayer dielectric layer is formed through a portion of the thickness to expose a portion of the silicided contact region and expose a portion of the stop layer.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: August 13, 2013
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: ChiKang Liu, ZhengYing Wei, GuoXu Zhao, YangFeng Li, GuoLiang Zhu, FangYu Yang
  • METHOD AND STRUCTURE FOR SELF ALIGNED CONTACT FOR INTEGRATED CIRCUITS
    Publication number: 20110037130
    Abstract: A high voltage integrated circuit device includes a semiconductor substrate having a surface region with a contact region, which is coupled to a source/drain region. The device has a plasma enhanced oxide overlying the surface region, a stop layer overlying the plasma enhanced oxide, and a contact opening through a portion of the stop layer and through a portion of the plasma enhanced oxide layer. The contact opening exposes a portion of the contact region without damaging it. The device has a silicide layer overlying the contact region to form a silicided contact region and an interlayer dielectric overlying the silicided contact region to fill the contact opening and provide a thickness of material overlying the stop layer. An opening in the interlayer dielectric layer is formed through a portion of the thickness to expose a portion of the silicided contact region and expose a portion of the stop layer.
    Type: Application
    Filed: July 30, 2010
    Publication date: February 17, 2011
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: ChiKang Liu, ZhengYing Wei, GuoXu Zhao, YangFeng Li, GuoLiang Zhu, FangYu Yang