Patents by Inventor Fangzhe Li

Fangzhe Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11810988
    Abstract: The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: November 7, 2023
    Assignee: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
    Inventors: Jing Zhou, Zeshi Chu, Xu Dai, Yu Yu, Mengke Lan, Shangkun Guo, Jie Deng, Xiaoshuang Chen, Qingyuan Cai, Fangzhe Li, Zhaoyu Ji
  • Publication number: 20220393049
    Abstract: The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.
    Type: Application
    Filed: November 10, 2020
    Publication date: December 8, 2022
    Applicant: SHANGHAI INSTITUTE OF TECHNICAL PHYSICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Jing Zhou, Zeshi Chu, Xu Dai, Yu Yu, Mengke Lan, Shangkun Guo, Jie Deng, Xiaoshuang Chen, Qingyuan Cai, Fangzhe Li, Zhaoyu Ji
  • Publication number: 20220352603
    Abstract: Disclosed are a power battery, a busbar component of the power battery and a method thereof. The busbar component comprises a busbar assembly. The busbar assembly comprises a busbar body, a first insulating layer and a second insulating layer. The busbar body is connected with one side of the first insulating layer facing a battery cell module, is integrated with a sampling line, and the sampling line is manufactured by a mechanical cutting and unloading process. The second insulating layer is attached to the first insulating layer and covers the sampling line, and the second insulating layer and the busbar body are on a same side of the first insulating layer and are arranged in a staggered manner. The cost is lowered, the process cycle of product is shortened, the production efficiency is improved, the applicability gets wider, the production process and the assembling process are simplified.
    Type: Application
    Filed: December 17, 2020
    Publication date: November 3, 2022
    Inventors: Xuewen LIU, Fangzhe LI
  • Publication number: 20220085228
    Abstract: The present disclosure provides a two-dimensional material detector with an asymmetrically integrated optical microstrip antenna, structurally including a metal reflecting surface, a dielectric spacer layer, a two-dimensional active material layer, a top source electrode, and a drain electrode integrated with a metal strip array. Self-driven photoresponse of a metal/two-dimensional material/metal structure is induced by a Schottky junction formed due to contact between the two-dimensional material and the metal. The asymmetrically integrated optical microstrip antennas break the symmetry between the two contact/two-dimensional material junctions. Light absorption in the contact/two-dimensional material junction integrated with optical patch antennas is significantly enhanced by efficient light in-coupling and intensified light localization; meanwhile, the extended boundary of the contact/two-dimensional material junction enlarges the photocurrent collection area.
    Type: Application
    Filed: September 15, 2021
    Publication date: March 17, 2022
    Applicant: Shanghai Institute of Technical Physics Chinese Academy of Sciences
    Inventors: Jing Zhou, Shangkun Guo, Yu Yu, Zhaoyu Ji, Xu Dai, Jie Deng, Xiaoshuang Chen, Qingyuan Cai, Zeshi Chu, Fangzhe Li, Mengke Lan