Abstract: An integrated front light assembly, a manufacturing method thereof and a reflective display device are disclosed. The integrated front light assembly includes a protective substrate; a touch-control layer disposed on the protective substrate; a light guide layer disposed on the touch-control layer; and a light source disposed on at least one side of the light guide layer. The reflective display device comprises a display panel and the integrated front light assembly. In this way, a thickness of the reflective display device can be reduced and a display effect of the reflective display device can be improved.

Abstract: Disclosed is a display substrate, which includes a base substrate and a polarization layer, wherein the polarization layer includes grid polarizer (GPs) and light-shielding matrixes arranged in a same layer and made from a same material. The display substrate simplifies the production process, reduces the cost and reduces the thickness of a liquid crystal display (LCD) device.

Abstract: The present disclosure provides an array substrate and a method of manufacturing the same and a display apparatus in which the array substrate is applied. In one embodiment, the method of manufacturing an array substrate at least includes the steps of: forming a first electrode layer, a metal gate layer and a first layer of non-oxide insulation material, the first layer of non-oxide insulation material being formed on an upper surface of the metal gate layer; forming, by using one patterning process, a pattern including a first electrode and a gate such that, after completion of the patterning process, a first non-oxide insulation layer is further formed on the gate and a first sub-electrode belonging to the first electrode layer is further formed below the gate. This method of manufacturing the array substrate is simple, which facilitates mass production of the array substrate as well as the display apparatus.

Abstract: A preparation method of a poly-silicon thin film transistor (TFT) array substrate and an array substrate thereof are provided. The preparation method includes: forming a photoresist layer on a poly-silicon layer, and exposing and developing the photoresist layer with a gray tone mask to form patterns of a photoresist completely-reserved region, a photoresist partially-reserved regions and a photoresist completely-removed region; removing part of the poly-silicon layer located in the photoresist completely-removed region, to form patterns of active layers; ashing the photoresist so as to expose part of the active layer located in the photoresist partially-reserved regions and inject P+ ions of high concentration into the part of the active layer, to form doping regions of patterns of source-drain electrodes of a P-type TFT; and stripping off remaining photoresist.

Abstract: Embodiments of the invention provides a method for fabricating an array substrate comprising: forming, on a substrate, at least two semiconductor active islands, first patterns positioned on both sides of each of the semiconductor active islands, second patterns positioned at outer side of a part of the first patterns, and third patterns positioned at outer side of the rest of the first patterns, through a single patterning process; doping a semiconductor at the second patterns for once to form a semiconductor of a first conductivity type; and doping a semiconductor at the third patterns for once to form a semiconductor of a second conductivity type.

Abstract: The invention provides a method for patterning a graphene layer and a method for manufacturing a display substrate. The method for patterning a graphene layer comprises: forming an isolation layer on a graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned photoresist layer to form a patterned graphene layer; and removing the patterned isolation layer. In the method of the invention, the unfavorable condition of the prior art may be avoided that a graphene film sloughs off or a photoresist remains on a graphene film when a photoresist material is peeled off, and the product yield can be improved in the case that the production cost is controlled.

Abstract: A preparation method of a poly-silicon thin film transistor (TFT) array substrate and an array substrate thereof are provided. The preparation method includes: forming a photoresist layer on a poly-silicon layer, and exposing and developing the photoresist layer with a gray tone mask to form patterns of a photoresist completely-reserved region, a photoresist partially-reserved regions and a photoresist completely-removed region; removing part of the poly-silicon layer located in the photoresist completely-removed region, to form patterns of active layers; ashing the photoresist so as to expose part of the active layer located in the photoresist partially-reserved regions and inject P+ions of high concentration into the part of the active layer, to form doping regions of patterns of source-drain electrodes of a P-type TFT; and stripping off remaining photoresist.

Abstract: An array substrate and manufacturing method thereof and a display device. The display device includes a pixel electrode (8), including a first portion (b) in a non-display region and a second portion (a) in a display region; a first electrode (6) formed on the first portion (b) of the pixel electrode (8); a passivation layer (9) formed on the pixel electrode (8) and the first electrode (6), the passivation layer (9) includes a via hole (11) located over the first electrode (6); an active layer (4) and a second electrode (7) that are formed on the passivation layer (9), the active layer (4) being connected to the first electrode (6) through the via hole (11) of the passivation layer (9). With the array substrate and the manufacturing method thereof, the manufacturing cost is reduced, materials of the electrodes are less subjected to corrosion, and quality of the array substrate is enhanced.

Abstract: The present invention has disclosed a touch screen, comprising: a substrate; at least one first electrode formed on the substrate; at least one second electrode formed on the substrate, the first electrode and the second electrode having different extending directions, and there being an intersecting area between a vertical projection of the first electrode on the substrate and a vertical projection of the second electrode on the substrate; and a first protection layer formed at least at the intersecting area between the first electrode and the second electrode; wherein, the substrate is provided with a groove at the intersecting area between the first electrode and the second electrode so as to at least receive therein a portion of the first electrode located within the intersecting area. The present invention has also disclosed a display device and a method for manufacturing the touch screen.

Abstract: The present disclosure relates to the field of display technology and provides a method for manufacturing a TFT, the TFT, an array substrate including the TFT, and a display device. The method includes steps of forming a pattern of a gate electrode on a base substrate, forming a gate insulation layer on the base substrate, and forming patterns of a source electrode and a drain electrode arranged above the gate insulation layer. The method further includes forming an antioxidation metal protection layer on a surface or surfaces of the gate electrode, the source electrode and/or the drain electrode.

Abstract: The present disclosure discloses a thin film transistor assembly, an array substrate and a method of manufacturing the same, and a display device including the array substrate. The array substrate includes a substrate; a plurality of thin film transistors formed on the substrate; and a plurality of light shielding layers, each of the light shielding layers being arranged between a source electrode and a drain electrode of the thin film transistor and configured to block light from the exterior from illuminating an active layer of the thin film transistor. The light shielding layer and the source electrode and the drain electrode of the thin film transistor are formed in the same layer on the substrate.

Abstract: The embodiments of the invention provide a color filter substrate and a manufacturing method thereof, and a display device, belonging to the field of display technology. Manufacturing the display device by using the above color filter substrate can simplify the manufacturing process and reduce the cost. The manufacturing method of the color filter substrate comprises: performing a single patterning process to form patterns of a plurality of first black matrixes and second black matrixes which are horizontally and longitudinally intersected, and patterns of a plurality of first touch electrodes positioned on surfaces of the second black matrixes away from a base substrate, wherein the patterns of the first black matrixes and the second black matrixes are intersected to define a plurality of color filter regions arranged in a form of matrix; and forming patterns of color filter layers within the color filter regions.

Abstract: Provided are a poly-silicon thin film transistor (TFT), a poly-silicon array substrate and a preparing method thereof, and a display device for solving the problems of excessive mask plates, complicated process and high costs in a conventional technology. The method of preparing the poly-silicon TFT comprising a doped region comprises steps: forming a poly-silicon layer on a substrate, forming an active layer by a patterning process; forming a first insulating layer; forming, by a patterning process, via holes exposing the active layer, the source electrode and the drain electrode being connected through the via holes to the active layer; doping the active layer through the via holes by a doping process to form a doped region; forming a source-drain metal layer, and forming the source electrode and the drain electrode by a patterning process.

Abstract: An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises: a thin film transistor (TFT 10) provided on a base substrate (01), a first passivation layer (200) provided on the thin film transistor (TFT 10), and a transparent electrode layer (300) provided on a surface of the first passivation layer (200). The first passivation layer (300) includes: a first sub-thin film layer (210), and a second sub-thin film layer (211) which is provided on a surface of the first sub-thin film layer (210) and in contact with the transparent electrode layer (300); and a film density of the second sub-thin film layer (211) is greater than that of the first sub-thin film layer (210).

Abstract: An array substrate and manufacturing method thereof and a display device. The display device includes a pixel electrode, including a portion in a display region and a portion in a non-display region; a first electrode formed on the non-display region of the pixel electrode; a passivation layer formed on the pixel electrode and the first electrode, which includes a via hole located over the first electrode; an active layer and a second electrode that are formed on the passivation layer, the active layer being connected to the first electrode through the via hole of the passivation layer. With the array substrate and the manufacturing method thereof, the manufacturing cost is reduced, the corrosion to an electrode material is lessened, and quality of the array substrate is enhanced.

Abstract: A touch panel and a method for fabricating the same are disclosed. The method for fabricating the touch panel forms a pattern of a protruding structure on a base substrate by using a negative photoresist material, and the pattern of the protruding structure formed thereon is a pattern having a cross section which gradually increases from the base substrate to the outside surface and is similar to an inverted trapezoidal. Thereafter patterns of a touch electrode and dummy electrode insulated from each other are formed by using the pattern of the formed protruding structure as a mask. As the pattern of the touch electrode and the dummy electrode are disconnected through level difference of the protruding structure, the patterns of the touch electrode and the dummy electrode overlay the whole base substrate from the top view, allowing the whole surface of the touch panel to have the same optical property.

Abstract: A touch panel, a manufacturing method thereof and a display device are provided. The touch panel includes a first touch electrode, a second touch electrode and a one-piece insulating element. The second touch electrode includes an electrode section disposed in a same layer as the first touch electrode and a connecting section under the electrode section. The electrode section includes a first electrode section and a second electrode section, which are electrically connected by the connecting section, and the connecting section is spaced apart from the first touch electrode. The insulating element includes a first insulating section between the connecting section and the first touch electrode and a second insulating section between the first electrode section and the first touch electrode and also between the second electrode section and the first touch electrode. The insulating sections can be obtained by performing a patterning process, so that the manufacturing method of the touch panel is simplified.

Abstract: Embodiments of the invention provides a method for fabricating an array substrate comprising: forming, on a substrate, at least two semiconductor active islands, first patterns positioned on both sides of each of the semiconductor active islands, second patterns positioned at outer side of a part of the first patterns, and third patterns positioned at outer side of the rest of the first patterns, through a single patterning process; doping a semiconductor at the second patterns for once to form a semiconductor of a first conductivity type; and doping a semiconductor at the third patterns for once to form a semiconductor of a second conductivity type.

Abstract: The present disclosure relates to the field of liquid crystal display technology, and provides an array substrate, its manufacturing method and a display device. The array substrate includes data lines, gate lines, and a plurality of pixel units defined by the data lines and the gate lines. Each of the plurality of the pixel unit includes a thin film transistor and a pixel electrode. The drain electrode includes a source/drain metal layer and an antioxidant conductive layer, the pixel electrode electrically contacts the antioxidant conductive layer, to realize electrical connection.

Abstract: The present invention provides an array substrate and a manufacturing method thereof and a display device. The manufacturing method comprises: forming a pattern including a pixel electrode and a source of a thin film transistor on a base substrate through a single patterning process, the pixel electrode is provided in a layer under a layer in which the source is located; forming a pattern including a drain, an active layer, a gate insulation layer and a gate of the thin film transistor through a single patterning process, the active layer covers the source and the drain, and is separated from the gate through the gate insulation layer; and forming a pattern including a passivation layer, a common electrode and a gate line through a single patterning process, the common electrode is a slit electrode and separated from the active layer and the pixel electrode through the passivation layer.