Abstract: The present invention relates to a method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR)4-n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to disproportionation reaction in a gaseous phase in the presence of an inorganic phosphate or a catalyst having a specific chemical structure based on a heteropolyacid salt structure. In the production method of the present invention, separation from the solvent can be carried out easily, the reaction proceeds quickly and the conversion rate of the starting materials is high.

Abstract: The present invention relates to a method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR)4-n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to disproportionation reaction in a gaseous phase in the presence of an inorganic phosphate or a catalyst having a specific chemical structure based on a heteropolyacid salt structure. In the production method of the present invention, separation from the solvent can be carried out easily, the reaction proceeds quickly and the conversion rate of the starting materials is high.

Abstract: The present invention relates to a method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR)4?n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to disproportionation reaction in a gaseous phase in the presence of an inorganic phosphate or a catalyst having a specific chemical structure based on a heteropolyacid salt structure. In the production method of the present invention, separation from the solvent can be carried out easily, the reaction proceeds quickly and the conversion rate of the starting materials is high.

Abstract: The present invention relates to method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR) 4-n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to dismutation reaction in a gaseous phase in the presence of a catalyst containing an alkali metal fluoride and a catalyst activator. The method can solve problems in a method for producing monosilane and tetraalkoxysilane by dismutation reaction of alkoxysilane in a liquid phase: i.e. problems such that separation from the solvent is difficult and that the reaction is too slow and not suitable for industrial production.

Abstract: The present invention relates to a method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR)4?n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to disproportionation reaction in a gaseous phase in the presence of an inorganic phosphate or a catalyst having a specific chemical structure based on a heteropolyacid salt structure. In the production method of the present invention, separation from the solvent can be carried out easily, the reaction proceeds quickly and the conversion rate of the starting materials is high.

Abstract: The present invention relates to method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR) 4-n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to dismutation reaction in a gaseous phase in the presence of a catalyst containing an alkali metal fluoride and a catalyst activator. The method can solve problems in a method for producing monosilane and tetraalkoxysilane by dismutation reaction of alkoxysilane in a liquid phase: i.e. problems such that separation from the solvent is difficult and that the reaction is too slow and not suitable for industrial production.