Abstract: A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indium arsenide between the semiconductor layer of indium antimonide and the superconductor layer of aluminum, a high-performance and durable hybrid heterostructure suitable for use in quantum computing devices is provided.

Abstract: A quantum well field-effect transistor (QWFET) includes a barrier layer, a quantum well layer, and a spacer layer. The quantum well layer is on the barrier layer. The barrier layer and the spacer layer comprise aluminum indium antimonide that is undoped. The quantum well layer comprises indium antimonide. The spacer layer is on the quantum well layer. The quantum well layer and the spacer layer are between a source contact and a drain contact. A gate contact is on a dielectric layer, which is on the spacer layer. By providing the barrier layer and the spacer layer as undoped layers, a performance of the QWFET may be improved.

Abstract: The present invention is in the field of oncology, and more particularly of cancer stem cells. It relates to a method for producing cancer stem cells based on overexpression of ?133p53? isoform, ?133p53? isoform, or both ?133p53? and ?133p53? isoforms; a method for predicting the risk that treatment with a chemotherapeutic anti-cancer agent induces cancer stem cells in a subject suffering from cancer from a cancer sample of said subject, based on detection of an increase in ?133p53? isoform, ?133p53? isoform, or both ?133p53? and ?133p53? isoforms following chemotherapeutic anti-cancer treatment; to therapeutic uses of a combination of chemotherapeutic anti-cancer agent and an agent reducing ?133p53? isoform, ?133p53? isoform, or both ?133p53? and ?133p53? isoforms expression; and also to screening methods for anti-cancer stem cells agents.

Abstract: A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indium arsenide between the semiconductor layer of indium antimonide and the superconductor layer of aluminum, a high-performance and durable hybrid heterostructure suitable for use in quantum computing devices is provided.

Abstract: A quantum well field-effect transistor (QWFET) includes a barrier layer, a quantum well layer, and a spacer layer. The quantum well layer is on the barrier layer. The barrier layer and the spacer layer comprise aluminum indium antimonide that is undoped. The quantum well layer comprises indium antimonide. The spacer layer is on the quantum well layer. The quantum well layer and the spacer layer are between a source contact and a drain contact. A gate contact is on a dielectric layer, which is on the spacer layer. By providing the barrier layer and the spacer layer as undoped layers, a performance of the QWFET may be improved.

Abstract: The present invention is in the field of oncology, and more particularly of cancer stem cells. It relates to a method for producing cancer stem cells based on overexpression of ?133?536 isoform, ?133?53? isoform, or both ?133?536 and ?133?53? isoforms; a method for predicting the risk that treatment with a chemotherapeutic anti-cancer agent induces cancer stem cells in a subject suffering from cancer from a cancer sample of said subject, based on detection of an increase in ?133?536 isoform, ?133?53? isoform, or both ?133?536 and ?133?53? isoforms following chemotherapeutic anti-cancer treatment; to therapeutic uses of a combination of chemotherapeutic anti-cancer agent and an agent reducing ?133p536 isoform, ?133?53? isoform, or both ?133?536 and ?133?53? isoforms expression; and also to screening methods for anti-cancer stem cells agents.