Patents by Inventor Fan-Qing Zeng

Fan-Qing Zeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Seal ring structure with a v-shaped dielectric layer conformally overlapping a conductive layer
    Patent number: 9305887
    Abstract: A method of forming a seal ring structure includes the following steps. A substrate is provided, and the substrate includes a seal ring region. A metal stack is formed in the seal ring region. A first dielectric layer covering the metal stack is formed. A part of the first dielectric layer is removed to form an opening to expose the metal stack, and at least a side of the opening is not perpendicular to a top surface of the first dielectric layer. A conductive layer is formed to fill the opening. A second dielectric layer is formed to continuously cover the first dielectric layer and the conductive layer, and the second dielectric layer has a v-shaped surface totally overlapping the conductive layer.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: April 5, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Fan-Qing Zeng, Ching Hwa Tey, Xiaoqing Xu
  • SEAL RING STRUCTURE AND METHOD OF FORMING THE SAME
    Publication number: 20140361438
    Abstract: A method of forming a seal ring structure includes the following steps. A substrate is provided, and the substrate includes a seal ring region. A metal stack is formed in the seal ring region. A first dielectric layer covering the metal stack is formed. A part of the first dielectric layer is removed to form an opening to expose the metal stack, and at least a side of the opening is not perpendicular to a top surface of the first dielectric layer. A conductive layer is formed to fill the opening. A second dielectric layer is formed to continuously cover the first dielectric layer and the conductive layer, and the second dielectric layer has a v-shaped surface totally overlapping the conductive layer.
    Type: Application
    Filed: June 5, 2013
    Publication date: December 11, 2014
    Inventors: Fan-Qing Zeng, Ching Hwa Tey, Xiaoqing Xu