Abstract: Methods of forming structures including a silicon germanium oxide photoresist underlayer and structures including the photoresist underlayer are disclosed. The methods can further include forming a passivation layer and/or an adhesion layer.

Abstract: Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.

Abstract: Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer. Properties of the adhesion layer can be tuned based on a selected photoresist by varying one or more process conditions.

Abstract: Methods of forming structures including photoresist underlayers and adhesion layers are disclosed. Exemplary methods include forming an adhesion layer using plasma-enhanced cyclical deposition processes.

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing plasma power for a plasma power period to form the silicon oxycarbide layer. Exemplary silicon precursors comprise a molecule comprising silicon, oxygen, carbon, and optionally nitrogen. The silicon precursor can further include one or more of (i) one or two silicon-oxygen bonds, (ii) one or two silicon-carbon bonds, or (iii) one carbon-carbon double bond.

Abstract: Methods of forming structures including photoresist underlayers including a bulk layer and an adhesion layer are disclosed. Exemplary methods include forming the bulk layer and forming an adhesion layer using plasma-enhanced cyclical deposition processes. The adhesion layer can be formed within the same reaction chamber used to form the bulk layer.