Abstract: The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize reflective sheet material. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize reflective sheet material. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: The invention disclosed herein relates to a scintillation detector for registering the position of gamma photon interactions, an comprises an array of two or more elongated first and second scintillation crystal elements connected together along their respective long sides, and an array of discrete photosensitive areas disposed on a common substrate of a solid-state semiconductor photo-detector. The array of first and second scintillation crystal elements have proximal output windows optically coupled to the array of discrete photosensitive areas in a one-to-one relationship. The invention may be characterized in that the first and second scintillation crystal elements include a rooftop portion at their distal ends, wherein the rooftop portion optically couples one of the first and second scintillation crystal elements to the other and is configured to reflect and transmit light resulting from a gamma photon interaction from one of the first and second scintillation crystal elements to the other.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize a curable bonding agent, removable wire spacers, and a series removable protective glass end plates. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.

Abstract: This invention relates to a multiview 3-dimensional display for sequentially projecting high number of 2-dimensional images of aspect angles of objects (scenes) into the wide field of view (apparatus) for producing their 3-dimensional images. The 3D image is perceived with great depth, provides comfortable conditions for its viewing without eye strain. The viewing of such 3D image also does not require using any supplementary means such as glasses or tracking devices, does not limit the position of the viewer in the field of view. This allows viewing the 3D image by many viewers simultaneously. The 3D display of the present invention can be used in computer and TV systems for transforming 2-dimensional images of aspect angles of virtual and real, static and moving 3D objects into corresponding signals and transmitting said signals for reproducing 2-dimensional by 3D display.

Abstract: The present invention is directed a switchable 3D/2D optical imagining system having high functional flexibility in a number of aspects and adaptability to various applications. The present invention is based on generating directional optional beams, transforming these optical beams and projecting transformed optical beams in a field of view to thereby divide the field of view into one or more adjustable viewing zones and to form 2-dimensional (2D) images or perspective views of a 3-dimensional (3D) image of an object or scene herein. The present invention is embodied in the switchable optical imaging system and 3D/2D image switchable apparatus using the same system.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize reflective sheet material. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: The invention disclosed herein relates to a scintillation detector for registering the position of gamma photon interactions, an comprises an array of two or more elongated first and second scintillation crystal elements connected together along their respective long sides, and an array of discrete photosensitive areas disposed on a common substrate of a solid-state semiconductor photo-detector. The array of first and second scintillation crystal elements have proximal output windows optically coupled to the array of discrete photosensitive areas in a one-to-one relationship. The invention may be characterized in that the first and second scintillation crystal elements include a rooftop portion at their distal ends, wherein the rooftop portion optically couples one of the first and second scintillation crystal elements to the other and is configured to reflect and transmit light resulting from a gamma photon interaction from one of the first and second scintillation crystal elements to the other.

Abstract: The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.

Abstract: The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.

Abstract: The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize a curable bonding agent, removable wire spacers, and a series removable protective glass end plates. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: The present invention is directed a switchable optical imaging system and a 3D/2D image switchable apparatus having high functional flexibility in a number of aspects and adaptability to various applications. The present invention is based on generating directional optical beams, transforming these optical beams and projecting transformed optical beams in a field of view to thereby divide the field of view into one or more adjustable viewing zones and to form 2-dimensional (2D) images or perspective views of a 3-dimensional (3D) image of an object or scene therein. The present invention is embodied in the switchable optical imaging system and the 3D/2D image switchable apparatus using the same system.

Abstract: The present invention is directed a switchable optical imaging system and a 3D/2D image switchable apparatus having high functional flexibility in a number of aspects and adaptability to various applications. The present invention is based on generating directional optical beams, transforming these optical beams and projecting transformed optical beams in a field of view to thereby divide the field of view into one or more adjustable viewing zones and to form 2-dimensional (2D) images or perspective views of a 3-dimensional (3D) image of an object or scene therein. The present invention is embodied in the switchable optical imaging system and the 3D/2D image switchable apparatus using the same system.

Abstract: The invention disclosed herein relates to a scintillation detector for registering the position of gamma photon interactions, an comprises an array of two or more elongated first and second scintillation crystal elements connected together along their respective long sides, and an array of discrete photosensitive areas disposed on a common substrate of a solid-state semiconductor photo-detector. The array of first and second scintillation crystal elements have proximal output windows optically coupled to the array of discrete photosensitive areas in a one-to-one relationship. The invention may be characterized in that the first and second scintillation crystal elements include a rooftop portion at their distal ends, wherein the rooftop portion optically couples one of the first and second scintillation crystal elements to the other and is configured to reflect and transmit light resulting from a gamma photon interaction from one of the first and second scintillation crystal elements to the other.

Abstract: This invention relates to a multiview 3-dimentional display for sequentially projecting high number of 2-dimensional images of aspect angles of objects (scenes) into the wide field of view (apparatus) for producing their 3-dimentional images. The 3D image is perceived with great depth, provides comfortable conditions for its viewing without eye strain. The viewing of such 3D image also does not require using any supplementary means such as glasses or tracking devices, does not limit the position of the viewer in the field of view. This allows viewing the 3D image by many viewers simultaneously. The 3D display of the present invention can be used in computer and TV systems for transforming 2-dimentional images of aspect angles of virtual and real, static and moving 3D objects into corresponding signals and transmitting said signals for reproducing 2-dimentional by 3D display.

Abstract: The invention disclosed herein is directed to scintillation detectors capable of detecting the position or depth of gamma photon interactions occurring within a scintillator, thereby improving the resolution of ring based positron emission tomography (PET) imaging systems. In one embodiment, the invention is directed to a scintillation detector that comprises at least one pair of side-by-side conjunct scintillation crystal bars having a shared interface between, and a solid-state semiconductor photodetector optically coupled to each output window of each individual scintillation crystal bar. The solid-state semiconductor photodetector includes an array of discrete sensitive areas disposed across a top surface of a common substrate, wherein each sensitive area contains an array of discrete micro-pixelated avalanche photodiodes, and wherein the output window of each scintillation crystal bar is optically coupled to each respective sensitive area in a one-on-one relationship.

Abstract: This invention enables the construction of equipment for reproduction of static and moving (live) 3-dimensional stereo representations (3-dimensional display), and is capable of recording and transmitting stereo representations of 3-dimensional objects (scenes). The equipment of the present invention provides to the user comfortable conditions for viewing a volumetric representation without eye strain. The viewing of such 3-dimensional images does not require the use of any supplementary means such as glasses, does not drastically limit the position of the viewer with respect to the display, and allows simultaneous viewing of the 3-dimensional display by many viewers from a sufficiently wide field of view.