Abstract: An analyte monitoring platform consisting of a proximity communicator and an implantable biosensor that includes system architecture for biosensor authentication, identification and methods to use analyte sensors for general wellness. The system architecture also permits multi-analyte sensing. In addition, the system and methods can be used for a single analyte or combination of analytes.

Abstract: An analyte monitoring platform consisting of a proximity communicator and an implantable biosensor that includes system architecture for biosensor authentication, identification and methods to use analyte sensors for general wellness. The system architecture also permits multi-analyte sensing. In addition, the system and methods can be used for a single analyte or combination of analytes.

Abstract: An implantable bio-sensing platform architecture that enables the wireless selection, calibration and reading of multiple sensors, as well as checking the power levels of the solar powering source energizing various electronic and optoelectronic devices and circuits embedded in the platform. It also permits checking the operation of the potentiostats interfacing with each amperometric analyte sensor. The platform is flexible to include FET based sensors for protein sensing as well as other applications including pH sensing. In addition, other physiological sensors can be integrated in the platform.

Abstract: An implantable bio-sensing platform architecture that enables the wireless selection, calibration and reading of multiple sensors, as well as checking the power levels of the solar powering source energizing various electronic and optoelectronic devices and circuits embedded in the platform. It also permits checking the operation of the potentiostats interfacing with each amperometric analyte sensor. The platform is flexible to include FET based sensors for protein sensing as well as other applications including pH sensing. In addition, other physiological sensors can be integrated in the platform.

Abstract: An implantable bio-sensing platform architecture that enables the wireless selection, calibration and reading of multiple sensors, as well as checking the power levels of the solar powering source energizing various electronic and optoelectronic devices and circuits embedded in the platform. It also permits checking the operation of the potentiostats interfacing with each amperometric analyte sensor. The platform is flexible to include FET based sensors for protein sensing as well as other applications including pH sensing. In addition, other physiological sensors can be integrated in the platform.

Abstract: The present invention discloses structures and method of fabricating cladded quantum dot gate nonvolatile memory and three-state field-effect transistor devices that can be scaled down to sub-22 nm dimensions and embedded along side with other functional circuits. Another innovation is the design of transport channel, which comprises an asymmetric coupled well structure comprising two or more wells. This structure enhances the retention time in nonvolatile memory by increasing the effective separation between channel charge and the quantum dots located in the floating gate. The cladded quantum dot gate FETs can be designed in Si, InGaAs—InP and other material systems. The 3-state FET devices form the basis of novel digital circuits using multiple valued logic and advanced analog circuits. One or more layers of SiOx-cladded Si quantum dots can also be used as high-k dielectric layer forming the gate insulator over the transport channel of a sub-22 nm FET.

Abstract: Structures and methodologies to obtain lasing in indirect gap semiconductors such as Ge and Si are provided and involves excitonic transitions in the active layer comprising of at least one indirect gap layer. Excitonic density is increased at a given injection current level by increasing their binding energy by the use of quantum wells, wires, and dots with and without strain. Excitons are formed by holes and electrons in two different layers that are either adjacent or separated by a thin barrier layer, where at least one layer confining electrons and holes is comprised of indirect gap semiconductor such as Si and Ge, resulting in high optical gain and lasing using optical and electrical injection pumping.

Abstract: The present invention discloses use of quantum dot gate FETs as a nonvolatile memory element that can be used in flash memory architecture as well as in a nonvolatile random access memory (NVRAM) configuration that does not require refreshing of data as in dynamic random access memories. Another innovation is the design of quantum dot gate nonvolatile memory and 3-state devices using modulation doped field-effect transistors (MODFETs), particularly MOS-gate field effect transistors. The cladded quantum dot gate MODFETs can be designed in Si—SiGe, InGaAs—InP and other material systems. The incorporation of 3-state FET devices in static random access memory (SRAM) cell is described to result in advanced multi-state memory operation. Unlike conventional SRAMs, the 3-state QD-FET based of SRAMs provides 3 and 4-state memory operation due to the utilization of the intermediate states particularly in CMOS configuration.

Abstract: A methodology used to pinpoint the location of an implantable biomedical sensing device is provided and is carried out by integrating miniaturized magnets, or materials with magnetic properties into the implantable bio-sensing chip to detect the position of the implant by sensing the induced magnetic field via an external communication unit. Presented here are various configurations in which magnetic positional detection can be carried out. The positional information collected from these detection motifs can be used to provide feedback to the user about alignment status as well as activate a self-alignment methodology. With respect to the former, based on the positional information received the user manually adjusts the location of the external communicator into place to align with the implantable platform.

Abstract: Quantum dot (QD) gate FETs and the use of quantum dot (QD) gate FETs for the purpose of sensing analytes and proteins is disclosed and described. Analytes, proteins, miRNAs, and DNAs functionalized to the QDs change the charge density in the gate and hence the current-voltage characteristics. In one embodiment, QD-FETs, such as 3-state configurations, the binding of chemical and biological species change the drain current-gate voltage characteristics resulting in detection. In one embodiment, DNA sensing is done by its binding to an existing reference DNA functionalized on to quantum dots which are located in the gate region of the FET.

Abstract: Structures and methodologies to obtain lasing in indirect gap semiconductors such as Ge and Si are provided and involves excitonic transitions in the active layer comprising of at least one indirect gap layer. Excitonic density is increased at a given injection current level by increasing their binding energy by the use of quantum wells, wires, and dots with and without strain. Excitons are formed by holes and electrons in two different layers that are either adjacent or separated by a thin barrier layer, where at least one layer confining electrons and holes is comprised of indirect gap semiconductor such as Si and Ge, resulting in high optical gain and lasing using optical and electrical injection pumping. In other embodiment, structures are described where excitons formed in an active layer confining electrons in the direct gap layer and holes in the indirect gap layer; where layers are adjacent or separated by a thin barrier layer.

Abstract: Disclosed herein is a device comprising a source region, a drain region and a gate layer; the source region, the drain region and the gate layer being disposed on a semiconductor host; the gate layer being disposed between source and drain regions; the gate layer comprising a first gate-insulator layer; a gate layer comprising carbon nanotubes and/or graphene. Disclosed herein too is a method comprising disposing a source region, a drain region and a gate layer on a semiconductor host; the gate layer being disposed between the source region and the drain region; the gate layer comprising carbon nanotubes and/or graphene.

Abstract: An implantable bio-sensing platform architecture that enables the wireless selection, calibration and reading of multiple sensors, as well as checking the power levels of the solar powering source energizing various electronic and optoelectronic devices and circuits embedded in the platform. It also permits checking the operation of the potentiostats interfacing with each amperometric analyte sensor. The platform is flexible to include FET based sensors for protein sensing as well as other applications including pH sensing. In addition, other physiological sensors can be integrated in the platform.

Abstract: Quantum dot (QD) gate FETs and the use of quantum dot (QD) gate FETs for the purpose of sensing analytes and proteins is disclosed and described. Analytes, proteins, miRNAs, and DNAs functionalized to the QDs change the charge density in the gate and hence the current-voltage characteristics. In one embodiment, QD-FETs, such as 3-state configurations, the binding of chemical and biological species change the drain current-gate voltage characteristics resulting in detection. In one embodiment, DNA sensing is done by its binding to an existing reference DNA functionalized on to quantum dots which are located in the gate region of the FET.

Abstract: Disclosed herein is a device comprising a source region, a drain region and a gate layer; the source region, the drain region and the gate layer being disposed on a semiconductor host; the gate layer being disposed between source and drain regions; the gate layer comprising a first gate-insulator layer; a gate layer comprising carbon nanotubes and/or graphene. Disclosed herein too is a method comprising disposing a source region, a drain region and a gate layer on a semiconductor host; the gate layer being disposed between the source region and the drain region; the gate layer comprising carbon nanotubes and/or graphene.

Abstract: The present invention discloses structures and method of fabricating cladded quantum dot gate nonvolatile memory and three-state field-effect transistor devices that can be scaled down to sub-22 nm dimensions and embedded along side with other functional circuits. Another innovation is the design of transport channel, which comprises an asymmetric coupled well structure comprising two or more wells. This structure enhances the retention time in nonvolatile memory by increasing the effective separation between channel charge and the quantum dots located in the floating gate. The cladded quantum dot gate FETs can be designed in Si, InGaAs—InP and other material systems. The 3-state FET devices form the basis of novel digital circuits using multiple valued logic and advanced analog circuits. One or more layers of SiOx-cladded Si quantum dots can also be used as high-k dielectric layer forming the gate insulator over the transport channel of a sub-22 nm FET.

Abstract: The present invention discloses use of quantum dot gate FETs as a nonvolatile memory element that can be used in flash memory architecture as well as in a nonvolatile random access memory (NVRAM) configuration that does not require refreshing of data as in dynamic random access memories. Another innovation is the design of quantum dot gate nonvolatile memory and 3-state devices using modulation doped field-effect transistors (MODFETs), particularly MOS-gate field effect transistors. The cladded quantum dot gate MODFETs can be designed in Si—SiGe, InGaAs—InP and other material systems. The incorporation of 3-state FET devices in static random access memory (SRAM) cell is described to result in advanced multi-state memory operation. Unlike conventional SRAMs, the 3-state QD-FET based of SRAMs provides 3 and 4-state memory operation due to the utilization of the intermediate states particularly in CMOS configuration.

Abstract: Disclosed herein are methods of self-assembling nanoparticles on specific sites of a substrate. The method generally includes introducing a p-type dopant species to at least a portion of an n-type substrate or introducing an n-type dopant species to at least a portion of a p-type substrate, wherein the dopant species creates a surface charge opposite in polarity to that of the substrate surface prior to the introducing; contacting the nanoparticles with the surface of the substrate; and self-assembling a layer of the nanoparticles on p-type regions of the substrate. The methods described herein may be used in the formation of sub-22 nanometer channels, which find use in field-effect transistors, electronic chips, nanoscale biosensors, photonic band gap devices, lasers in optoelectronics and photonics chips, as well as nano-electro-mechanical devices (NEMS).

Abstract: Disclosed herein are methods of self-assembling nanoparticles on specific sites of a substrate. The method generally includes introducing a p-type dopant species to at least a portion of an n-type substrate or introducing an n-type dopant species to at least a portion of a p-type substrate, wherein the dopant species creates a surface charge opposite in polarity to that of the substrate surface prior to the introducing; contacting the nanoparticles with the surface of the substrate; and self-assembling a layer of the nanoparticles on p-type regions of the substrate. The methods described herein may be used in the formation of sub-22 nanometer channels, which find use in field-effect transistors, electronic chips, nanoscale biosensors, photonic band gap devices, lasers in optoelectronics and photonics chips, as well as nano-electro-mechanical devices (NEMS).

Abstract: This invention describes an apparatus, Scanning Localized Evaporation Methodology (SLEM) for the close proximity deposition of thin films with high feature definition, high deposition rates, and significantly improved material economy. An array of fixed thin film heating elements, each capable of being individually energized, is mounted on a transport mechanism inside a vacuum chamber. The evaporable material is deposited on a heating element. The SLEM system loads the surface of heating elements, made of foils, with evaporable material. The loaded thin film heating element is transported to the substrate site for re-evaporation. The re-evaporation onto a substrate, which is maintained at the desired temperature, takes place through a mask. The mask, having patterned openings dictated by the structural requirements of the fabrication, may be heated to prevent clogging of the openings. The translation of the substrate past the evaporation site permits replication of the pattern over its entire surface.