Abstract: Systems, devices, and methods for a microwave energy applicator. The applicator may define an internal channel having one or more longitudinal ridges inside the channel configured to focus energy. The ridges may be moveable. A reflector may be located near an exit of the applicator. In some embodiments, the applicator may define a channel having a decrease in cross-sectional area with a dielectric filler therein, acting to transition from a lower to a higher permittivity material. The various embodiments of the applicator may be attached to a waveguide, which may be an articulable robotic arm having rotatable waveguide segments attached with a microwave generator. The applicator may alter an energy level of microwaves travelling therethrough, for example, to concentrate the energy for application at a rock face in a mine site.

Abstract: In many embodiments, Gd/GdO materials are incorporated into a magnetic heterostructure between the electrodes, either in contact with the electrodes or within the stack of the heterostructure. In some embodiments, the Gd/GdO materials can be inserted into a single magnetic layer. In several embodiments, the Gd/GdO materials can be inserted within a magnetic tunnel junction stack, i.e., a magnetic structure that includes two ferromagnetic layers separated by an insulating layer. In further embodiments, the Gd/GdO materials are utilized in voltage-controlled magnetic anisotropy-based MTJs (“VMTJs”), which are devices that uses the voltage-controlled magnetic anisotropy (“VCMA”) phenomena to reduce the coercivity of the free layer of the VMTJs to make the free layer more easily switched to the opposite direction (writeable). Gd/GdO materials can also be utilized within a magnetoelectric junction (“MEJ”) structure.

Abstract: In various embodiments, magnetic heterostructures and magnetic layers can be implemented and configured to provide electric field controlled magnetic tunnel junctions. Such magnetic heterostructures and magnetic layers can incorporate a variety of different materials and layers for various effects. In many embodiments, the magnetic heterostructures incorporate hybrid seed layers. Such layers can be incorporated for various reasons including but not limited to producing an enhanced voltage controlled magnetic anisotropy (“VCMA”) effect. The VCMA effect can be explained in terms of the electric-field-induced change of occupancy of atomic orbitals at the interface, which, in conjunction with spin-orbit interaction, results in a change of anisotropy. In some embodiments, the magnetic heterostructures and layers incorporate free layer insertions. In a number of embodiments, the magnetic heterostructures incorporate a material insertion at the interface of the tunneling barrier and the free layer.