Abstract: A process condition measurement device may include a substrate and a cover. The cover may cover the substrate to protect sensors and interconnects from a process environment, such as from corrosive gases, plasma, and radio frequency signals. The cover may uncover portions of the substrate to improve the thermo-mechanical behavior of the substrate. The cover may uncover portions of the substrate by blank-through holes which are offset from the sensors and interconnects. The cover may also uncover portions of the substrate by grooves formed through the cover. The process condition measurement device may also include a thin-film which is formed over the interconnects. The thin-film may protect interconnects from the process environment. The blank-through holes, the grooves, and the thin-films may be used separately or in combination.

Abstract: A process condition measurement apparatus is disclosed. The apparatus includes a substrate, one or more insulation portions, a first plurality of interconnect traces, a second plurality of interconnect traces, and a plurality of sensors disposed on the substrate. The second plurality of interconnect traces is disposed over the first plurality of interconnect traces and intersects at a plurality of locations to form a matrix of interconnect junctions across one or more locations of the substrate. A respective sensor is electrically coupled to a respective trace of the first and second plurality of interconnect traces. The respective sensor is individually readable by addressing the respective trace of the first and second plurality of interconnect traces.

Abstract: An instrumented wafer assembly for process condition monitoring is disclosed. The instrumented wafer assembly includes a cover wafer including one or more module openings and a substrate wafer. The cover wafer is contacted to the substrate wafer. The instrumented wafer assembly includes sensors embedded between the cover wafer and the substrate wafer. The one or more electronic modules are elevated above the substrate wafer with one or more module contacts to provide a thermal gap between the substrate wafer and the one or more electronic modules. The one or more electronic modules are aligned within the one or more module openings in the cover wafer. The instrumented wafer assembly includes one or more module lids to shield the one or more electronic modules, The one or more module lids are secured above the one or more module openings of the cover wafer with the module contacts.

Abstract: A process condition measurement device may include a substrate made of a bottom substrate, a spacer, and a cover. The process condition measurement device may include a component. The component may be disposed within a cavity defined by the bottom substrate and a through hole defined by the spacer. The cover may be disposed above and cover the component. The cover may be a full cover or a partial cover. The component may also be disposed within a recess defined by the cover. The process condition measurement device may also include an insulation layer which encapsulates the component.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A process condition sensing apparatus is disclosed. The apparatus includes a substrate and an electronic enclosure including one or more electronic components. The apparatus includes a floating connection assembly configured to mechanically couple the electronic enclosure to the substrate, the floating connection assembly includes a leg and a foot. The leg or foot are arranged to mitigate thermal stress between one or more interfaces. The one or more interfaces include a leg-enclosure interface or a foot-substrate interface.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A process condition sensing apparatus is disclosed. The apparatus includes a substrate and an electronic enclosure including one or more electronic components. The apparatus includes a floating connection assembly configured to mechanically couple the electronic enclosure to the substrate, the floating connection assembly includes a leg and a foot. The leg or foot are arranged to mitigate thermal stress between one or more interfaces. The one or more interfaces include a leg-enclosure interface or a foot-substrate interface.

Abstract: An enclosure assembly is disclosed, in accordance with one or more embodiment of the present disclosure. The enclosure assembly includes a top portion. The enclosure assembly further includes a bottom portion. The top portion is detachably connectable to the bottom portion via one or more coupling devices. The top portion is further reversibly, electrically couplable to the bottom portion via one or more electronic contacts. One or more electronic components are disposed within the enclosure assembly.

Abstract: A process condition measurement apparatus is disclosed. The apparatus includes a substrate, one or more insulation portions, a first plurality of interconnect traces, a second plurality of interconnect traces, and a plurality of sensors disposed on the substrate. The second plurality of interconnect traces is disposed over the first plurality of interconnect traces and intersects at a plurality of locations to form a matrix of interconnect junctions across one or more locations of the substrate. A respective sensor is electrically coupled to a respective trace of the first and second plurality of interconnect traces. The respective sensor is individually readable by addressing the respective trace of the first and second plurality of interconnect traces.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A system and method are provided for fabricating semiconductor wafer features with controlled dimensions. In use, a top surface of a semiconductor wafer is identified. A first portion of the top surface of the semiconductor wafer is then vertically etched to form a step down from a second portion of the top surface of the semiconductor wafer, the step comprised of a horizontal face and a vertical sidewall. Additionally, a film is uniformly deposited across the horizontal face and the vertical sidewall of the step. Further, the second portion of the top surface of the semiconductor wafer is vertically etched to expose, as a feature of the semiconductor wafer, the film deposited across the vertical sidewall of the step.

Abstract: A first nominally flat object is obtained that has a controlled warpage that has been measured in a manner traceable through a standard reference material to a fundamental unit of measurement. A measurement tool is calibrated using the first nominally flat object. After calibrating the measurement tool using the first nominally flat object, the warpage of a plurality of nominally flat objects is measured using the measurement tool, wherein the plurality of nominally flat objects is distinct from the first nominally flat object.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A system and method are provided for fabricating semiconductor wafer features with controlled dimensions. In use, a top surface of a semiconductor wafer is identified. A first portion of the top surface of the semiconductor wafer is then vertically etched to form a step down from a second portion of the top surface of the semiconductor wafer, the step comprised of a horizontal face and a vertical sidewall. Additionally, a film is uniformly deposited across the horizontal face and the vertical sidewall of the step. Further, the second portion of the top surface of the semiconductor wafer is vertically etched to expose, as a feature of the semiconductor wafer, the film deposited across the vertical sidewall of the step.