Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A process condition sensing apparatus is disclosed. The apparatus includes a substrate and an electronic enclosure including one or more electronic components. The apparatus includes a floating connection assembly configured to mechanically couple the electronic enclosure to the substrate, the floating connection assembly includes a leg and a foot. The leg or foot are arranged to mitigate thermal stress between one or more interfaces. The one or more interfaces include a leg-enclosure interface or a foot-substrate interface.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A process condition sensing apparatus is disclosed. The apparatus includes a substrate and an electronic enclosure including one or more electronic components. The apparatus includes a floating connection assembly configured to mechanically couple the electronic enclosure to the substrate, the floating connection assembly includes a leg and a foot. The leg or foot are arranged to mitigate thermal stress between one or more interfaces. The one or more interfaces include a leg-enclosure interface or a foot-substrate interface.

Abstract: An enclosure assembly is disclosed, in accordance with one or more embodiment of the present disclosure. The enclosure assembly includes a top portion. The enclosure assembly further includes a bottom portion. The top portion is detachably connectable to the bottom portion via one or more coupling devices. The top portion is further reversibly, electrically couplable to the bottom portion via one or more electronic contacts. One or more electronic components are disposed within the enclosure assembly.

Abstract: A reference substrate for calibrating high-energy inspection systems includes permanently affixed particle-emulating and/or integral void-type environmentally inert surface features that emulate particles/defects having sizes below about 18 nm. Particle-emulating surface features are fabricated directly onto the substrate's surface (or an intervening barrier film layer) using e-beam lithography or over-etch processing. Void-type defect features having sizes below 18 nm are etched into the substrate's surface using, for example, focused ion beam, reactive particle or pin-hole etching processes. Once formed, the actual size of each surface feature is measured (e.g., using SEM) and then recorded. During a subsequent inspection tool calibration session, the reference substrate is scanned and waveform data corresponding to light reflected/scattered from each surface feature is correlated with the scanned feature's actual size data.

Abstract: A process condition measurement apparatus is disclosed. The apparatus includes a substrate, one or more insulation portions, a first plurality of interconnect traces, a second plurality of interconnect traces, and a plurality of sensors disposed on the substrate. The second plurality of interconnect traces is disposed over the first plurality of interconnect traces and intersects at a plurality of locations to form a matrix of interconnect junctions across one or more locations of the substrate. A respective sensor is electrically coupled to a respective trace of the first and second plurality of interconnect traces. The respective sensor is individually readable by addressing the respective trace of the first and second plurality of interconnect traces.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A system and method are provided for fabricating semiconductor wafer features with controlled dimensions. In use, a top surface of a semiconductor wafer is identified. A first portion of the top surface of the semiconductor wafer is then vertically etched to form a step down from a second portion of the top surface of the semiconductor wafer, the step comprised of a horizontal face and a vertical sidewall. Additionally, a film is uniformly deposited across the horizontal face and the vertical sidewall of the step. Further, the second portion of the top surface of the semiconductor wafer is vertically etched to expose, as a feature of the semiconductor wafer, the film deposited across the vertical sidewall of the step.

Abstract: A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.

Abstract: A first nominally flat object is obtained that has a controlled warpage that has been measured in a manner traceable through a standard reference material to a fundamental unit of measurement. A measurement tool is calibrated using the first nominally flat object. After calibrating the measurement tool using the first nominally flat object, the warpage of a plurality of nominally flat objects is measured using the measurement tool, wherein the plurality of nominally flat objects is distinct from the first nominally flat object.

Abstract: A system and method are provided for fabricating semiconductor wafer features with controlled dimensions. In use, a top surface of a semiconductor wafer is identified. A first portion of the top surface of the semiconductor wafer is then vertically etched to form a step down from a second portion of the top surface of the semiconductor wafer, the step comprised of a horizontal face and a vertical sidewall. Additionally, a film is uniformly deposited across the horizontal face and the vertical sidewall of the step. Further, the second portion of the top surface of the semiconductor wafer is vertically etched to expose, as a feature of the semiconductor wafer, the film deposited across the vertical sidewall of the step.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.

Abstract: A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Aspects of the present disclosure disclose a component module in a process condition measuring device comprises a support for supporting a component, one or more legs configured to suspend the support in a spaced-apart relationship with respect to a substrate. An electrically conductive or low-resistivity semiconductor enclosure is configured to enclose the component, the support and the legs between the substrate and the enclosure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.

Abstract: A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.

Abstract: Aspects of the present disclosure disclose a component module in a process condition measuring device comprises a support for supporting a component, one or more legs configured to suspend the support in a spaced-apart relationship with respect to a substrate. An electrically conductive or low-resistivity semiconductor enclosure is configured to enclose the component, the support and the legs between the substrate and the enclosure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.