Abstract: Methods for inducing reversible or permanent conductivity in wide band gap metal oxides such as Ga2O3, using light without doping, as well as related compositions and devices, are described.

Abstract: A method for bipolar doping of oxide semiconductor materials, a method for doping an oxide semiconductor material n-type, a method for doping an oxide semiconductor material p-type, and products of the same are described. Also described is p-type Ga2O3 having hydrogen atoms as dopants. Also described is n-type Ga2O3 having hydrogen atoms as dopants, or having both of a sheet carrier concentration of at least about 1016 cm2, and/or a mobility of at least about 100 cm2/VS at room temperature.

Abstract: Methods for inducing reversible or permanent conductivity in wide band gap metal oxides such as Ga2O3, using light without doping, as well as related compositions and devices, are described.

Abstract: Compositions, thin films, devices, and methods involving doped oxide semiconductor materials are described. Indium gallium doped zinc oxide (IGZO) with advantageous properties that may be useful as a transparent conductive oxide (TCO) is described. Methods of digital doping to create doped oxide semiconductor materials are described.

Abstract: Methods and systems using low temperature thermo-luminescence to measure donor ionization energies in luminescence semiconductors are described.

Abstract: Various embodiments of systems, components, modules, routines, and processes for luminescence based spectral measurement are described herein. In one embodiment, a method for measuring a scintillation property of a sample includes directing an ionizing radiation toward the sample, thereby inducing the sample to produce an emission. The method also includes acquiring a spectral luminescence of the produced emission by the sample, the spectral luminescence including a plurality of luminescence intensities at corresponding emission wavelengths or frequencies. The scintillation property of the sample may then be determined based on the acquired spectral luminescence.

Abstract: Various embodiments of systems, components, modules, routines, and processes for luminescence based spectral measurement are described herein. In one embodiment, a method for measuring a scintillation property of a sample includes directing an ionizing radiation toward the sample, thereby inducing the sample to produce an emission. The method also includes acquiring a spectral luminescence of the produced emission by the sample, the spectral luminescence including a plurality of luminescence intensities at corresponding emission wavelengths or frequencies. The scintillation property of the sample may then be determined based on the acquired spectral luminescence.