Abstract: The present disclosure is directed to processing imagery using one or more machine learning (ML) models. In particular, data describing imagery comprising a plurality of different and distinct frames can be received; and based at least in part on one or more ML models and the data describing the imagery, and for each frame of the plurality of different and distinct frames, one or more scores can be determined for the frame. Each score of the score(s) can indicate a determined measure of suitability of the frame with respect to one or more of various different and distinct uses for which the ML model(s) are configured to determine suitability of imagery.

Abstract: The present disclosure is directed to processing imagery using one or more machine learning (ML) models. In particular, data describing imagery comprising a plurality of different and distinct frames can be received; and based at least in part on one or more ML models and the data describing the imagery, and for each frame of the plurality of different and distinct frames, one or more scores can be determined for the frame. Each score of the score(s) can indicate a determined measure of suitability of the frame with respect to one or more of various different and distinct uses for which the ML model(s) are configured to determine suitability of imagery.

Abstract: In one aspect, there is provided a method performed by multiple data processing units for distributed processing of data defining a synaptic connectivity graph that includes multiple nodes and edges and represents synaptic connectivity between neurons in a brain of a biological organism. The method includes obtaining graph data defining the synaptic connectivity graph that represents synaptic connectivity between neurons in the brain of the biological organism. The method further includes dividing the graph data defining the synaptic connectivity graph into multiple sub-graph datasets that each define a respective sub-graph of the synaptic connectivity graph. The method further includes distributing multiple sub-graph datasets over multiple data processing units and processing multiple sub-graph datasets using multiple data processing units.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for implementing brain emulation neural networks on user devices. One of the methods includes obtaining, by a first component of a user device, a network input; processing, by the first component of the user device, the network input using an artificial neural network to generate a network output, wherein the artificial neural network has a network architecture that has been determined according to a synaptic connectivity graph, wherein the synaptic connectivity graph represents synaptic connectivity between neurons in a brain of a biological organism; and providing the network output for use by one or more second components of the user device.

Abstract: The present disclosure is directed to processing imagery using one or more machine learning (ML) models. In particular, data describing imagery comprising a plurality of different and distinct frames can be received; and based at least in part on one or more ML models and the data describing the imagery, and for each frame of the plurality of different and distinct frames, one or more scores can be determined for the frame. Each score of the score(s) can indicate a determined measure of suitability of the frame with respect to one or more of various different and distinct uses for which the ML model(s) are configured to determine suitability of imagery.

Abstract: Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

Abstract: Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

Abstract: Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.

Abstract: A novel sound system for use on a motorcycle or similar vehicle is disclosed as comprising a stereo housing, a power supply, a stereo source, mirror/speaker assemblies, a control that is remote from the stereo source, and a wiring harness for operational interconnection between the components. In use, the sound system is installable in a way to integrate with the architecture of the motorcycle and to preclude obstruction of the operator in the use of the motorcycle.

Abstract: Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.

Abstract: Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.

Abstract: Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.