Patents by Inventor Farrell Martin Good

Farrell Martin Good has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PLASMA DOPING OF GAP FILL MATERIALS
    Publication number: 20230044518
    Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.
    Type: Application
    Filed: October 21, 2022
    Publication date: February 9, 2023
    Inventors: Santanu Sarkar, Jay Steven Brown, Shu Qin, Yongjun Jeff Hu, Farrell Martin Good
  • Plasma doping of gap fill materials
    Patent number: 11508573
    Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: November 22, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Santanu Sarkar, Jay Steven Brown, Shu Qin, Yongjun Jeff Hu, Farrell Martin Good
  • PLASMA DOPING OF GAP FILL MATERIALS
    Publication number: 20210202243
    Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.
    Type: Application
    Filed: May 13, 2020
    Publication date: July 1, 2021
    Applicant: Micron Technology, Inc.
    Inventors: Santanu Sarkar, Jay Steven Brown, Shu Qin, Yongjun Jeff Hu, Farrell Martin Good