Patents by Inventor Farzad Dean TAJIK

Farzad Dean TAJIK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PECVD microcrystalline silicon germanium (SiGe)
    Patent number: 9484199
    Abstract: Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: November 1, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hyo-In Chi, Farzad Dean Tajik, Michel Anthony Rosa
  • PECVD MICROCRYSTALLINE SILICON GERMANIUM (SIGE)
    Publication number: 20150072509
    Abstract: Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.
    Type: Application
    Filed: August 14, 2014
    Publication date: March 12, 2015
    Inventors: Hyo-In CHI, Farzad Dean TAJIK, Michel Anthony ROSA